MITSUBISHI GATE TURN-OFF THYRISTORS FG2000JV-90DA HIGH POWER INVERTER USE PRESS PACK TYPE OUTLINE DRAWING FG2000JV-90DA Dimension in mm GATE (WHITE) 356 ± 8 AUXILIARY CATHODE CONNECTOR (RED) 0.4 min ¡ITQRM Repetitive controllable on-state current ............. 2000A ¡IT(AV) Average on-state current ...................... 600A ¡VDRM Repetitive peak off state voltage ........ 4500V ¡Anode short type 0.4 min 26 ± 0.5 φ 63 ± 0.5 φ 3.5 ± 0.2 DEPTH 2.2 ± 0.2 CATHODE TYPE NAME φ 63 ± 0.5 φ 93 max ANODE φ 3.5 ± 0.2 DEPTH 2.2 ± 0.2 APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. MAXIMUM RATINGS Symbol VRRM VRSM VR(DC) VDRM VDSM VD(DC) Voltage class 90DA 17 17 17 4500 4500 3600 Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage+ Non-repetitive peak off-state voltage+ DC off-state voltage+ Unit V V V V V V + : VGK = –2V Symbol I TQRM I T(RMS) I T(AV) I TSM I 2t d iT/dt VFGM VRGM I FGM I RGM PFGM PRGM PFG(AV) PRG(AV) Tj Tstg — — Parameter Repetitive controllable on-state current RMS on-state current Average on-state current Surge (non-repetitive) on-state current Current-squared, time integration Critical rate of rise of on-state current Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate reverse current Peak forward gate power dissipation Peak reverse gate power dissipation Average forward gate power dissipation Average reverse gate power dissipation Junction temperature Storage temperature Mounting force required Weight Conditions VD = 2250V, VDM = 3375V, Tj = 125°C, CS = 4.0µF, LS = 0.3µH f = 60Hz, sine wave θ = 180°, Tf = 91°C One half cycle at 60Hz One cycle at 60Hz VD = 2250V, IGM = 30A, Tj = 125°C Recommended value 20 Standard value Ratings 2000 940 600 13 7 × 105 500 10 17 50 700 250 23.8 50 150 –40 ~ +125 –40 ~ +150 18 ~ 24 760 Unit A A A kA A2s A/µs V V A A W kW W W °C °C kN g Feb.1999 MITSUBISHI GATE TURN-OFF THYRISTORS FG2000JV-90DA HIGH POWER INVERTER USE PRESS PACK TYPE ELECTRICAL CHARACTERISTICS Parameter Symbol Test conditions VTM IRRM IDRM IRG dv/dt tgt On-state voltage Repetitive peak reverse current Repetitive peak off-state current Reverse gate current Critical rate of rise of off-state voltage Turn-on time Tj = 125°C, ITM = 2000A, Instantaneous measurment Tj = 125°C, VRRM Applied Tj = 125°C, VDRM Applied, VGK = –2V Tj = 125°C, VRG = 17V Tj = 125°C, VD = 2250V, V GK = –2V Tj = 125°C, ITM = 2000A, IGM = 30A, VD = 2250V tgq Turn-off time IGQM VGT IGT Rth(j-f) Peak gate turn-off current Gate trigger voltage Gate trigger current Thermal resistance Tj = 125°C, ITM = 2000A, VD = 2250V, V DM = 3375V, diGQ/dt = –30A/µs, VRG = 17V, CS = 4.0µF, LS = 0.3µH DC METHOD : VD = 24V, R L = 0.1Ω, T j = 25°C Junction to fin Min — — — — 1000 — Limits Typ — — — — — — — — — — — — 570 — — — Max 3.5 100 100 100 — 10 30 — 1.5 2.5 0.017 Unit V mA mA mA V/µs µs µs A V A °C/W MAXIMUM ON-STATE CHARACTERISTIC 104 7 Tj = 125°C 5 3 2 103 7 5 3 2 102 7 5 3 2 101 0 1 2 3 4 5 6 RATED SURGE ON-STATE CURRENT 20 SURGE ON-STATE CURRENT (kA) ON-STATE CURRENT (A) PERFORMANCE CURVES 18 16 14 12 10 8 6 4 2 0 100 7 ON-STATE VOLTAGE (V) MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO FIN) 100 2 3 5 7101 0.025 100 7 5 3 2 PFGM = 250W PFG(AV) = 50W VGT = 1.5V Tj = 25°C IGT = 2.5A IFGM = 50A 10–1 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE CURRENT (mA) THERMAL IMPEDANCE (°C/W) GATE VOLTAGE (V) 101 7 5 3 2 VFGM = 10V 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) GATE CHARACTERISTICS 102 7 5 3 2 2 3 4 5 7 101 0.020 0.015 0.010 0.005 0 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 TIME (s) Feb.1999 MITSUBISHI GATE TURN-OFF THYRISTORS FG2000JV-90DA MAXIMUM ON-STATE POWER DISSIPATION CHARACTERISTICS (SINGLE-PHASE HALF WAVE) 2000 ALLOWABLE FIN TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 140 180° 1800 130 120° θ 1600 FIN TEMPERATURE (°C) ON-STATE POWER DISSIPATION (W) HIGH POWER INVERTER USE PRESS PACK TYPE 90° 360° 1400 RESISTIVE, 1200 INDUCTIVE LOAD θ = 30° 1000 60° 800 600 400 110 100 90 80 0 100 200 300 400 500 60 600 θ = 30° 60° 200 300 90° 120° 180° MAXIMUM ON-STATE POWER DISSIPATION CHARACTERISTICS (RECTANGULAR WAVE) 2400 DC 2200 270° 180° 2000 1800 120° 90° 1600 60° 1400 θ = 30° 1200 1000 θ 800 600 360° RESISTIVE, 400 INDUCTIVE 200 LOAD 0 0 200 400 600 800 1000 6 5 4 3 IGT VGT 2 1 0 –40 0 40 80 120 JUNCTION TEMPERATURE (°C) 160 400 500 600 140 130 θ 120 360° RESISTIVE, INDUCTIVE LOAD 110 100 90 80 θ = 30° 70 60 0 200 60° 90° 180° DC 270° 120° 400 600 800 1000 AVERAGE ON-STATE CURRENT (A) TURN ON TIME tgt, TURN ON DELAY TIME td (µs) VD = 24V RL = 0.1Ω DC METHOD 7 100 ALLOWABLE FIN TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) AVERAGE ON-STATE CURRENT (A) GATE TRIGGER CURRENT, GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE (MAXIMUM) 8 0 AVERAGE ON-STATE CURRENT (A) FIN TEMPERATURE (°C) ON-STATE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) GATE TRIGGER CURRENT (A), GATE TRIGGER VOLTAGE (V) 360° RESISTIVE, INDUCTIVE LOAD 70 200 0 θ 120 TURN ON TIME, TURN ON DELAY TIME VS. TURN ON GATE CURRENT (TYPICAL) 16 IT = 2000A VD = 2250V diT/dt = 500A/µs diG/dt = 10A/µs Tj = 125°C 14 12 10 8 6 tgt 4 td 2 0 0 10 20 30 40 50 60 TURN ON GATE CURRENT (A) Feb.1999 MITSUBISHI GATE TURN-OFF THYRISTORS FG2000JV-90DA TURN OFF TIME, TURN OFF STORAGE TIME VS. TURN OFF CURRENT (TYPICAL) 30 VD = 2250V VDM = 3375V diGQ/dt = –30A/µs 25 VRG = 17V CS = 4.0µF LS = 0.3µH 20 Tj = 125°C tgq 15 ts 10 5 0 500 1000 1500 2000 2500 TURN OFF CURRENT (A) TURN OFF TIME tgq, TURN OFF STORAGE TIME ts (µs) TURN OFF TIME tgq, TURN OFF STORAGE TIME ts (µs) HIGH POWER INVERTER USE PRESS PACK TYPE TURN OFF TIME, TURN OFF STORAGE TIME VS. RATE OF RISE OF TURN OFF GATE CURRENT (TYPICAL) 50 30 VD = 2250V VDM = 3375V IT = 2000A VRG = 17V CS = 4.0µF LS = 0.3µH Tj = 125°C 20 tgq 10 ts 40 0 10 500 400 VD = 2250V VDM = 3375V diGQ/dt = –30A/µs VRG = 17V CS = 4.0µF LS = 0.3µH Tj = 125°C 300 0 500 1000 1500 2000 TURN OFF GATE CURRENT (A) 600 60 600 500 VD = 2250V VDM = 3375V IT = 2000A VRG = 17V CS = 4.0µF LS = 0.3µH Tj = 125°C 400 20 30 40 60 50 TURN OFF CURRENT (A) RATE OF RISE OF TURN OFF GATE CURRENT (A/µs) TURN ON SWITCHING ENERGY (MAXIMUM) TURN OFF SWITCHING ENERGY (MAXIMUM) 6.0 diT/dt = 300A/µs 200A/µs 2.0 1.6 100A/µs 1.2 0.8 VD = 2250V IGM = 30A diG/dt = 10A/µs CS = 4.0µF RS = 5Ω Tj = 125°C 0.4 0 700 300 10 2500 400 800 1200 1600 2000 2400 TURN ON CURRENT (A) SWITCHING ENERGY Eoff (J/P) TURN OFF GATE CURRENT (A) 50 800 2.4 SWITCHING ENERGY Eon (J/P) 40 TURN OFF GATE CURRENT VS. RATE OF RISE OF GATE CURRENT (TYPICAL) 700 0 30 RATE OF RISE OF TURN OFF GATE CURRENT (A/µs) TURN OFF GATE CURRENT VS. TURN OFF CURRENT (TYPICAL) 200 20 4µF 5.0 CS = 2µF 6µF 4.0 3.0 2.0 VD = 2250V VDM = 3375V diGQ/dt = –30A/µs VRG = 17V LS = 0.3µH Tj = 125°C 1.0 0 0 400 800 1200 1600 2000 2400 TURN OFF CURRENT (A) Feb.1999