Power Integrated Module (PIM) n Features • • • • n Outline Drawing Included Rectifier and Brake Chopper Square RBSOA Low Saturation Voltage Overcurrent Limiting Function ( ~ 3 Times Rated Current ) n Equivalent Circuit n Absolute Maximum Ratings ( Tc=25°C) Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Collector Power Dissipation Repetitive Peak Reverse Voltage Non Repetitive Peak Reverse Voltage Average Output Current Surge Current (Non Repetitive) I 2t (Non Repetitive) Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Collector Power Dissipation Repetitive Peak Reverse Voltage Average Forward Current Surge Current Operating Junction Temperature Storage Temperature Isolation Voltage Mounting Screw Torque *1 Symbols VCES VGES IC IC PULSE -IC PULSE PC VRRM VRSM IO IFSM VCES VGES IC IC PULSE PC VRRM IF(AV) IFSM Tj TStg VISO Test Conditions Continuous 1ms 1ms 1 device 50Hz/60Hz sin. wave Tj=150°C, 10ms Tj=150°C, 10ms Continuous 1ms 1 device 10ms A.C. 1min. Ratings 600 ± 20 50 100 50 200 800 900 50 350 648 600 ± 20 50 100 200 600 1 50 +150 -40 ∼ +125 2500 1.7 Units V A W V A A2s V A W V A °C V Nm Note: *1:Recommendable Value; 1.3 ∼ 1.7 Nm (M4) n Electrical Characteristics( Tj=25°C ) Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time Forward Voltage Reverse Current Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Collector-Emitter Saturation Voltage Turn-on Time Turn-off Time Reverse Current Reverse Recovery Time Symbols ICES IGES VGE(th) VCE(sat) Cies ton tr toff tf VF trr VFM IRRM ICES IGES VCE(sat) ton tr toff tf IRRM trr Test Conditions VGE=0V VCE=600V VCE=0V VGE=± 20V VGE=20V IC=50mA VGE=15V IC=50A f=1MHz, VGE=0V, VCE=10V VCC = 300V IC = 50A VGE = ±15V RG = 51Ω IF=50A VGE=0V IF=50A IF = 50A VR =800V VGE=0V VCE=600V VCE=0V VGE=± 20V VGE=15V IC=50A VCC = 300V IC = 50A VGE = ±15V RG = 51Ω VR=600V Min. Max. 1.0 20 4.5 7.5 2.9 3300 (typ.) Test Conditions Inverter IGBT Inverter FRD Brake IGBT Converter Diode With Thermal Compound Min. 1.2 0.6 1.0 0.35 3.1 350 1.55 1.0 1.0 100 2.8 0.8 0.6 1.0 0.35 1.0 600 Units mA µA V pF µs V ns V mA mA nA V µs mA ns n Thermal Characteristics Items Symbols Thermal Resistance (1 device) Rth(j-c) Contact Thermal Resistance Rth(c-f) Max. 0.63 1.60 0.63 2.10 0.05 (typ.) Units °C/W Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage T j=125°C T j=25°C 125 125 V GE =20V,15V, 12V, V GE =20V,15V,12V, 100 75 10V 50 Collector current : I Collector current : I C C [A] [A] 100 25 75 10V 50 25 8V 8V 0 0 0 1 2 3 4 5 0 3 4 5 Collector-Emitter vs. Gate-Emitter voltage Collector-Emitter vs. Gate-Emitter voltage T j=25°C T j=125°C CE [V] 10 [V] 8 Collector-Emitter voltage : V CE Collector-Emitter voltage : V 2 Collector-Emitter voltage : V CE [V] 10 6 4 IC= 100A 50A 2 25A 0 8 6 IC= 4 100A 50A 2 25A 0 0 5 10 15 20 25 0 Gate-Emitter voltage : V GE [V] 5 10 15 20 25 Gate-Emitter voltage : V GE [V] Switching time vs. Collector current Switching time vs. Collector current V CC =300V, R G =51 W , V GE =±15V, T j=25°C V CC =300V, R G =51 Ω , V GE =±15V, Tj=125°C 1000 , t r , t off , t f [nsec] t on t off on tr tf tr tf 100 Switching time : t Switching time : t 100 t off t on , t r , t off , t f [nsec] 1000 on 1 Collector-Emitter voltage : V CE [V] 10 10 0 20 40 60 Collector current : I C [A] 80 0 20 40 60 Collector current : I C [A] 80 Switching time vs. R G Dynamic input characteristics [V] CE tf 100 300V 400 300 15 200 10 100 5 0 0 10 100 50 Gate resistance : R G [ Ω ] 100 0 150 Gate charge : Q G [nC] FRD Forward current vs. Forward voltage Reverse recovery characteristics V GE = O V t rr , I rr vs. I F 70 [A] 40 30 20 10 t rr 125°C 100 t rr 25°C :t Reverse recovery time Reverse recovery current : I 50 rr rr [A] F Forward current : I [nsec] T j=125°C 25°C 60 0 I rr 125°C I rr 25°C 10 1 0 1 2 3 4 0 10 20 30 40 50 Forward voltage : V F [V] Forward current : I F [A] Transient thermal resistance +V GE =15V, -V GE <15V, T j<125°C, R G >82 Ω Reversed biased safe operating area 300 1 250 [A] IGBT C Collector current : I Thermal resistance : R th(j-c) [°C/W] FRD Converter Diode 0,1 200 SCSOA (non-repetitive pulse) 150 100 50 RBSOA (Repetitive pulse) 0 0,001 0,01 0,1 Pulse width : PW [sec] 1 20 400V Collector-Emitter voltage : V Switching time : t 25 V CC =200V tr 10 T j=25°C 500 t on t off 1000 on , t r , t off , t f [nsec] V CC =300V, I C =30A, V GE =±15V, T j=25°C 0 100 200 300 400 500 Collector-Emitter voltage : V C E [V] 600 Capacitance vs. Collector-Emitter voltage Switching loss vs. Collector current V CC =300V, R G =51 Ω , V GE =±15V 5 T j=25°C E off 25°C Switching loss : E E on 125°C 2 E on 25°C 1 E rr 125°C E rr 25°C 0 0 20 40 60 80 Converter Diode V GE = O V T j=125°C 25°C Forward current : I F [A] 50 40 30 20 10 0,5 1,0 Forward voltage : V F [V] 1 C oes C res 0,1 5 10 15 20 25 Collector-Emitter Voltage : V CE [V] Forward current vs. Forward voltage 0 0,0 C ies 0 Collector Current : I C [A] 60 Capacitance : C ies 3 , C oes , C res [nF] 4 on , E off , E rr [mJ/cycle] 10 E off 125°C 1,5 2,0 30 35 Brake Chopper IGBT Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage T j= 1 2 5 ° C T j= 2 5 ° C 125 125 V GE =20V,15V, 12V, V GE =20V,15V,12V, 100 75 10V 50 Collector current : I Collector current : I C C [A] [A] 100 25 75 10V 50 25 8V 8V 0 0 0 1 2 3 4 5 0 3 4 5 Collector-Emitter vs. Gate-Emitter voltage Collector-Emitter vs. Gate-Emitter voltage T j= 2 5 ° C T j= 1 2 5 ° C CE [V] 10 [V] 8 Collector-Emitter voltage : V CE Collector-Emitter voltage : V 2 Collector-Emitter voltage : V CE [V] 10 6 4 I C= 100A 50A 2 25A 0 8 6 I C= 4 100A 50A 2 25A 0 0 5 10 15 20 25 0 Gate-Emitter voltage : V GE [V] 5 10 15 20 25 Gate-Emitter voltage : V GE [V] Switching time vs. Collector current Switching time vs. Collector current V CC = 3 0 0 V , R G = 5 1 W , V GE = ± 1 5 V , T j = 2 5 ° C V CC = 3 0 0 V , R G = 5 1 Ω , V GE = ± 1 5 V , T j = 1 2 5 ° C 1000 , t r , t off , t f [nsec] t on t off on tr tf tr tf 100 Switching time : t Switching time : t 100 t off t on , t r , t off , t f [nsec] 1000 on 1 Collector-Emitter voltage : V CE [V] 10 10 0 20 40 60 Collector current : I C [A] 80 0 20 40 60 Collector current : I C [A] 80 Brake Chopper IGBT Switching time vs. R G Dynamic input characteristics V CC =300V, I C = 5 0 A , V GE = ± 1 5 V , T j = 2 5 ° C T j= 2 5 ° C 500 V CC = 2 0 0 V t on t off 300V 400 CE Collector-Emitter voltage : V tf 100 Switching time : t on , t r , t off , t f [nsec] tr 10 10 300 15 200 10 100 5 0 100 0 200 0 300 250 V CC = 3 0 0 V , R G = 5 1 Ω , V GE = + 1 5 V E off, E rr[mJ/cycle] 5 400 SCSOA 300 C E off 1 2 5 C 4 E off 2 5 C 3 on, (non-repetitive pulse) 200 Switching loss : E [A] 150 Switching loss vs. Collector current + V GE = 1 5 V , - V GE < 1 5 V , T j < 1 2 5 ° C , R G > 51 Ω Collector current : I 100 G a t e c h a r g e : Q G [nC] 500 100 RBSOA (Repetitive pulse) 0 E on 1 2 5 C 2 E on 2 5 C 1 E rr1 2 5 C E rr 2 5 C 0 0 100 200 300 400 500 0 600 Collector-Emitter voltage : V C E [V] Tj=25C C oes ,C res [nF] 10 C ies 1 C oes C res 0,1 0 5 10 15 20 25 Collector-Emitter Voltage : V C E [V] 20 40 60 Collector-Emitter Current : I C [A] Capacitance vs. Collector-Emitter Voltage ies , 50 Gate resistance : R G [ Ω ] Reversed biased safe operating area Capacitance : C 20 400V [V] 1000 25 30 35 80 P.O. 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