AD ADP2108AUJZ-2.5-R7

Compact, 600 mA, 3 MHz,
Step-Down DC-to-DC Converter
ADP2108
Data Sheet
FEATURES
GENERAL DESCRIPTION
Peak efficiency: 95%
3 MHz fixed frequency operation
Typical quiescent current: 18 μA
Maximum load current: 600 mA
Input voltage: 2.3 V to 5.5 V
Uses tiny multilayer inductors and capacitors
Current mode architecture for fast load and line
transient response
100% duty cycle low dropout mode
Internal synchronous rectifier
Internal compensation
Internal soft start
Current overload protection
Thermal shutdown protection
Shutdown supply current: 0.2 μA
Available in
5-ball WLCSP
5-lead TSOT
Supported by ADIsimPower™ design tool
The ADP2108 is a high efficiency, low quiescent current stepdown dc-to-dc converter manufactured in two different
packages. The total solution requires only three tiny external
components. It uses a proprietary, high speed current mode,
constant frequency PWM control scheme for excellent stability
and transient response. To ensure the longest battery life in
portable applications, the ADP2108 has a power save mode that
reduces the switching frequency under light load conditions.
The ADP2108 runs on input voltages of 2.3 V to 5.5 V, which
allows for single lithium or lithium polymer cell, multiple alkaline
or NiMH cell, PCMCIA, USB, and other standard power sources.
The maximum load current of 600 mA is achievable across the
input voltage range.
The ADP2108 is available in fixed output voltages of 3.3 V, 3.0 V,
2.5 V, 2.3 V, 1.82 V, 1.8 V, 1.5 V, 1.3 V, 1.2 V, 1.1 V, and 1.0 V. All
versions include an internal power switch and synchronous rectifier for minimal external part count and high efficiency. The
ADP2108 has an internal soft start and is internally compensated.
During logic controlled shutdown, the input is disconnected
from the output and the ADP2108 draws less than 1 μA from
the input source.
APPLICATIONS
PDAs and palmtop computers
Wireless handsets
Digital audio, portable media players
Digital cameras, GPS navigation units
Other key features include undervoltage lockout to prevent deep
battery discharge and soft start to prevent input current overshoot at startup. The ADP2108 is available in 5-ball WLCSP and
5-lead TSOT packages. The ADP2109 provides the same features
and operations as the ADP2108 and has the additional function
of a discharge switch in the WLCSP package.
TYPICAL APPLICATIONS CIRCUIT
ADP2108
1µH
2.3V TO 5.5V
VIN
1.0V TO 3.3V
SW
10µF
4.7µF
ON
EN
FB
GND
07375-003
OFF
Figure 1.
Rev. G
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Fax: 781.461.3113 ©2008–2012 Analog Devices, Inc. All rights reserved.
ADP2108
Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Enable/Shutdown ....................................................................... 11
Applications ....................................................................................... 1
Short-Circuit Protection............................................................ 12
General Description ......................................................................... 1
Undervoltage Lockout ............................................................... 12
Typical Applications Circuit............................................................ 1
Thermal Protection .................................................................... 12
Revision History ............................................................................... 2
Soft Start ...................................................................................... 12
Specifications..................................................................................... 3
Current Limit .............................................................................. 12
Absolute Maximum Ratings ............................................................ 4
100% Duty Operation ................................................................ 12
Thermal Resistance ...................................................................... 4
Applications Information .............................................................. 13
ESD Caution .................................................................................. 4
ADIsimPower Design Tool ....................................................... 13
Pin Configuration and Function Descriptions ............................. 5
External Component Selection ................................................ 13
Typical Performance Characteristics ............................................. 6
Thermal Considerations............................................................ 14
Theory of Operation ...................................................................... 11
PCB Layout Guidelines.............................................................. 14
Control Scheme .......................................................................... 11
Evaluation Board ............................................................................ 15
PWM Mode ................................................................................. 11
Outline Dimensions ....................................................................... 16
Power Save Mode ........................................................................ 11
Ordering Guide .......................................................................... 17
REVISION HISTORY
6/12—Rev. F to Rev. G
Change to Features Section ............................................................. 1
Added ADIsimPower Design Tool Section ................................. 13
Updated Outline Dimensions ....................................................... 16
1/12—Rev. E to Rev. F
Change to Table 3................................................................................... 4
Changes to Output Capacitor Section ......................................... 13
10/10—Rev. D to Rev. E
Changed −40°C to +85°C to −40°C to +125°C Throughout ......... 3
Changes to Ordering Guide .......................................................... 17
1/10—Rev. C to Rev. D
Changes to Ordering Guide .......................................................... 17
4/09—Rev. B to Rev. C
Changes to General Description Section ...................................... 1
2/09—Rev. A to Rev. B
Added 5-Lead TSOT Package ........................................... Universal
Changes to Absolute Maximum Ratings Section ......................... 4
Updated Outline Dimensions ....................................................... 16
Changes to Ordering Guide .......................................................... 17
11/08—Rev. 0 to Rev. A
Changes to Figure 4 .......................................................................... 6
Updated Outline Dimensions ....................................................... 16
9/08—Revision 0: Initial Version
Rev. G | Page 2 of 20
Data Sheet
ADP2108
SPECIFICATIONS
VIN = 3.6 V, VOUT = 1.8 V, TJ = −40°C to +125°C for minimum/maximum specifications, and TA = 25°C for typical specifications, unless
otherwise noted. 1
Table 1.
Parameter
INPUT CHARACTERISTICS
Input Voltage Range
Undervoltage Lockout Threshold
OUTPUT CHARACTERISTICS
Output Voltage Accuracy
Test Conditions/Comments
Min
Typ
Max
Unit
2.15
5.5
2.3
2.25
V
V
V
+2
+2.5
%
%
2.3
VIN rising
VIN falling
2.05
PWM mode
VIN = 2.3 V to 5.5 V, PWM mode
−2
−2.5
POWER SAVE MODE TO PWM CURRENT THRESHOLD
85
mA
PWM TO POWER SAVE MODE CURRENT THRESHOLD
80
mA
INPUT CURRENT CHARACTERISTICS
DC Operating Current
Shutdown Current
SW CHARACTERISTICS
SW On Resistance (WLCSP)
SW On Resistance (TSOT)
Current Limit
ILOAD = 0 mA, device not switching
EN = 0 V, TA = TJ = −40°C to +125°C
18
0.2
PFET
NFET
PFET
NFET
PFET switch peak current limit
1100
30
1.0
µA
µA
320
300
380
260
1300
1500
mΩ
mΩ
mΩ
mΩ
mA
V
V
µA
ENABLE CHARACTERISTICS
EN Input High Threshold
EN Input Low Threshold
EN Input Leakage Current
EN = 0 V, 3.6 V
−1
0
0.4
+1
OSCILLATOR FREQUENCY
ILOAD = 200 mA
2.5
3.0
3.5
MHz
550
µs
1.2
START-UP TIME
THERMAL CHARACTERISTICS
Thermal Shutdown Threshold
Thermal Shutdown Hysteresis
1
150
20
All limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC).
Rev. G | Page 3 of 20
°C
°C
ADP2108
Data Sheet
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
VIN, EN
FB, SW to GND
Operating Ambient Temperature Range
Operating Junction Temperature Range
Storage Temperature Range
Lead Temperature Range
Soldering (10 sec)
Vapor Phase (60 sec)
Infrared (15 sec)
ESD Human Body Model
ESD Charged Device Model
ESD Machine Model
Rating
−0.4 V to +6.5 V
−1.0 V to (VIN + 0.2 V)
−40°C to +125°C
−40°C to +125°C
−65°C to +150°C
−65°C to +150°C
300°C
215°C
220°C
±1500 V
±500 V
±100 V
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
In applications with moderate power dissipation and low PCB
thermal resistance, the maximum ambient temperature can
exceed the maximum limit as long as the junction temperature
is within specification limits. The junction temperature (TJ)
of the device is dependent on the ambient temperature (TA),
the power dissipation (PD) of the device, and the junction-toambient thermal resistance of the package (θJA). Maximum
junction temperature (TJ) is calculated from the ambient
temperature (TA) and power dissipation (PD) using the formula
TJ = TA + (PD × θJA).
THERMAL RESISTANCE
θJA is specified for a device mounted on a JEDEC 2S2P PCB.
Table 3. Thermal Resistance
Package Type
5-Ball WLCSP
5-Lead TSOT
ESD CAUTION
Absolute maximum ratings apply individually only, not in
combination. Unless otherwise specified, all other voltages
are referenced to GND.
The ADP2108 can be damaged when the junction temperature
limits are exceeded. Monitoring ambient temperature does not
guarantee that TJ is within the specified temperature limits.
In applications with high power dissipation and poor thermal
resistance, the maximum ambient temperature may have to
be derated.
Rev. G | Page 4 of 20
θJA
105
170
Unit
°C/W
°C/W
Data Sheet
ADP2108
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
BALL A1
INDICATOR
1
2
VIN
GND
A
SW
B
EN
FB
TOP VIEW
(BALL SIDE DOWN)
Not to Scale
07375-002
C
Figure 2. WLCSP Pin Configuration
Table 4. WLCSP Pin Function Descriptions
Mnemonic
VIN
A2
B
C1
C2
GND
SW
EN
FB
Description
Power Source Input. VIN is the source of the PFET high-side switch. Bypass VIN to GND with a 2.2 μF or greater
capacitor as close to the ADP2108 as possible.
Ground. Connect all the input and output capacitors to GND.
Switch Node Output. SW is the drain of the PFET switch and NFET synchronous rectifier.
Enable Input. Drive EN high to turn on the ADP2108. Drive EN low to turn it off and reduce the input current to 0.2 μA.
Feedback Input of the Error Amplifier. Connect FB to the output of the switching regulator.
VIN 1
GND 2
EN 3
ADP2108
5
SW
4
FB
TOP VIEW
(Not to Scale)
07375-040
Pin No.
A1
Figure 3. TSOT Pin Configuration
Table 5. TSOT Pin Function Descriptions
Pin No.
1
Mnemonic
VIN
2
3
4
5
GND
EN
FB
SW
Description
Power Source Input. VIN is the source of the PFET high-side switch. Bypass VIN to GND with a 2.2 μf or greater
capacitor as close to the ADP2108 as possible.
Ground. Connect all the input and output capacitors to GND.
Enable Input. Drive EN high to turn on the ADP2108. Drive EN low to turn it off and reduce the input current to 0.1 μA.
Feedback Input of the Error Amplifier. Connect FB to the output of the switching regulator.
Switch Node Output. SW is the drain of the PFET switch and NFET synchronous rectifier.
Rev. G | Page 5 of 20
ADP2108
Data Sheet
TYPICAL PERFORMANCE CHARACTERISTICS
VIN = 3.6 V, TA = 25°C, VEN = VIN, unless otherwise noted.
1400
24
+85°C
1300
1200
CURRENT LIMIT (mA)
QUIESCENT CURRENT (µA)
22
20
+25°C
18
–40°C
16
1100
1000
900
800
14
3.0
3.5
4.0
4.5
5.0
5.5
INPUT VOLTAGE (V)
600
2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 4.3 4.5 4.7 4.9 5.1 5.3 5.5
07375-014
INPUT VOLTAGE (V)
Figure 7. PMOS Current Limit vs. Input Voltage
0.15
3400
0.14
3300
0.13
OUTPUT CURRENT (A)
3500
3200
–40°C
3100
3000
+25°C
2900
+85°C
2800
0.12
0.11
0.10
0.09
0.08
PWM TO PSM
0.06
2600
0.05
PSM TO PWM
+85°C
2.8
3.3
3.8
4.3
4.8
5.3
INPUT VOLTAGE (V)
0.04
2.5
3.0
3.5
4.0
4.5
5.0
5.5
07375-018
2500
2.3
–40°C
0.07
2700
07375-015
FREQUENCY (kHz)
Figure 4. Quiescent Supply Current vs. Input Voltage
5.5
07375-019
12
2.5
07375-017
700
INPUT VOLTAGE (V)
Figure 5. Switching Frequency vs. Input Voltage
Figure 8. Mode Transition Across Temperature
0.15
1.840
IOUT = 10mA
0.14
1.835
0.13
OUTPUT CURRENT (A)
IOUT = 150mA
1.825
1.820
1.815
IOUT = 500mA
1.810
0.12
0.11
0.10
0.09
PSM TO PWM
1.805
0.08
1.800
0.07
1.795
–45
–25
–5
15
35
55
TEMPERATURE (°C)
75
07375-016
OUTPUT VOLTAGE (V)
1.830
Figure 6. Output Voltage vs. Temperature
PWM TO PSM
0.06
2.5
3.0
3.5
4.0
4.5
INPUT VOLTAGE (V)
Figure 9. Mode Transition
Rev. G | Page 6 of 20
5.0
Data Sheet
ADP2108
1.825
100
90
80
70
VIN = 2.7V
VIN = 3.6V
VIN = 4.5V
VIN = 5.5V
1.805
EFFICIENCY (%)
OUTPUT VOLTAGE (V)
1.815
1.795
60
50
VIN = 2.7V
VIN = 3.6V
VIN = 4.5V
VIN = 5.5V
40
30
1.785
20
0
0.1
0.2
0.3
0.4
0.5
0.6
OUTPUT CURRENT (A)
0
0.001
07375-020
1.775
0.01
0.1
1
OUTPUT CURRENT (A)
Figure 10. Load Regulation, VOUT = 1.8 V
07375-023
10
Figure 13. Efficiency, VOUT = 1.8 V
1.025
100
VIN = 2.7V
VIN = 3.6V
VIN = 4.5V
VIN = 5.5V
1.020
90
80
70
EFFICIENCY (%)
OUTPUT VOLTAGE (V)
1.015
1.010
1.005
1.000
60
50
40
VIN = 2.7V
VIN = 3.6V
VIN = 4.5V
VIN = 5.5V
30
0.995
20
0.990
0.2
0.3
0.4
0.5
0.6
OUTPUT CURRENT (A)
0
0.001
0.01
0.1
1
07375-024
0.1
07375-021
0
1
07375-025
10
0.985
OUTPUT CURRENT (A)
Figure 11. Load Regulation, VOUT = 1.0 V
Figure 14. Efficiency, VOUT = 1.0 V
100
3.3775
90
3.3575
3.3175
EFFICIENCY (%)
70
VIN = 3.6V
VIN = 4.5V
VIN = 5.5V
3.2975
3.2775
VIN = 3.6V
VIN = 4.5V
VIN = 5.5V
60
50
40
30
3.2575
20
3.2375
10
3.2175
0
0.1
0.2
0.3
0.4
OUTPUT CURRENT (A)
0.5
0.6
07375-022
OUTPUT VOLTAGE (V)
80
3.3375
Figure 12. Load Regulation, VOUT = 3.3 V
0
0.001
0.01
0.1
OUTPUT CURRENT (A)
Figure 15. Efficiency, VOUT = 3.3 V
Rev. G | Page 7 of 20
ADP2108
Data Sheet
VIN
VIN
3
3
SW
SW
4
4
VOUT
1
VOUT
07375-026
07375-029
1
CH1 50mV
CH3 1V
M 40µs
T 10.80%
CH4 2V
A CH3
CH1 50mV
CH3 1V
3.26V
Figure 16. Line Transient, VOUT = 1.8 V, Power Save Mode, 20 mA
CH4 2V
M 40µs
T 10.80%
A CH3
4.4V
Figure 19. Line Transient, VOUT = 3.3 V, PWM, 200 mA
SW
VIN
4
SW
VOUT
1
3
4
VOUT
IOUT
07375-027
07375-030
2
1
CH1 20mV
CH3 1V
M 40µs
T 10.80%
CH4 2V
A CH3
CH1 50mV
3.26V
CH2 200mA Ω
CH4 2V
M 40µs
T 19.80%
A CH2
36mA
Figure 20. Load Transient, VOUT = 1.8 V, 300 mA to 600 mA
Figure 17. Line Transient, VOUT = 1.8 V, PWM, 200 mA
VIN
4
SW
SW
1
3
VOUT
4
IOUT
VOUT
2
CH1 50mV
CH3 1V
CH4 2V
M 40µs
T 10.80%
A CH3
07375-031
07375-028
1
CH1 50mV
3.26V
Figure 18. Line Transient, VOUT = 1.0 V, PWM, 200 mA
CH2 250mA
CH4 2V
M 40µs
T 25.4%
A CH2
5mA
Figure 21. Load Transient, VOUT = 1.8 V, 50 mA to 300 mA
Rev. G | Page 8 of 20
Data Sheet
ADP2108
SW
SW
4
4
VOUT
IL
1
2
VOUT
IOUT
1
2
CH2 50mA Ω
CH4 2V
M 40µs
T 25.4%
A CH2
12mA
07375-035
3
07375-032
CH1 50mV
EN
CH1 500mV CH2 500mA
CH3 5V
CH4 5V
Figure 22. Load Transient, VOUT = 1.8 V, 5 mA to 50 mA
M 40µs
T 19.80%
A CH3
2.1V
Figure 25. Start-Up, VOUT = 1.0 V, 600 mA
SW
SW
4
4
IL
IL
2
2
VOUT
EN
3
07375-033
3
CH1 1V
CH3 5V
CH2 250mA
CH4 5V
EN
1
M 40µs
T 10.80%
A CH3
2V
07375-036
VOUT
1
CH2 250mA
CH4 5V
CH1 2V
CH3 5V
Figure 23. Start-Up, VOUT = 1.8 V, 400 mA
M 40µs
T 10.80%
A CH3
2V
Figure 26. Start-Up, VOUT = 3.3 V, 150 mA
SW
4
SW
4
IL
2
IL
2
VOUT
1
EN
VOUT
1
CH1 1V
CH3 5V
CH2 250mA
CH4 5V
M 40µs
T 10.80%
A CH3
07375-037
07375-034
3
2V
CH1 50mV
CH2 500mA
CH4 2V
M 2µs
T 20%
A CH4
2.64mA
Figure 27. Typical Power Save Mode Waveform, 50 mA
Figure 24. Start-Up, VOUT = 1.8 V, 5 mA
Rev. G | Page 9 of 20
ADP2108
Data Sheet
SW
4
IL
2
VOUT
07375-038
1
CH1 20mV
CH2 200mA
CH4 2V
M 200ns
T 20%
A CH4
2.64V
Figure 28. Typical PWM Waveform, 200 mA
Rev. G | Page 10 of 20
Data Sheet
ADP2108
THEORY OF OPERATION
GM ERROR
AMP
PWM
COMP
VIN
SOFT START
ILIMIT
FB
PSM
COMP
PWM/
LOW
PSM
CONTROL CURRENT
SW
DRIVER
AND
ANTISHOOTTHROUGH
OSCILLATOR
UNDERVOLTAGE
LOCKOUT
ADP2108
EN
07375-001
GND
THERMAL
SHUTDOWN
Figure 29. Functional Block Diagram
The ADP2108 is a step-down dc-to-dc converter that uses a
fixed frequency and high speed current mode architecture. The
high switching frequency allows for a small step-down, dc-to-dc
converter solution.
The ADP2108 operates with an input voltage of 2.3 V to 5.5 V
and regulates an output voltage down to 1.0 V.
CONTROL SCHEME
The ADP2108 operates with a fixed frequency, current mode
PWM control architecture at medium to high loads for high
efficiency, but shifts to a power save mode control scheme at
light loads to lower the regulation power losses. When operating
in fixed frequency PWM mode, the duty cycle of the integrated
switches is adjusted and regulates the output voltage. When
operating in power save mode at light loads, the output voltage
is controlled in a hysteretic manner, with higher VOUT ripple.
During part of this time, the converter is able to stop switching
and enters an idle mode, which improves conversion efficiency.
PWM MODE
In PWM mode, the ADP2108 operates at a fixed frequency of
3 MHz, set by an internal oscillator. At the start of each oscillator
cycle, the PFET switch is turned on, sending a positive voltage
across the inductor. Current in the inductor increases until the
current sense signal crosses the peak inductor current threshold
that turns off the PFET switch and turns on the NFET synchronous
rectifier. This sends a negative voltage across the inductor, causing
the inductor current to decrease. The synchronous rectifier stays
on for the rest of the cycle. The ADP2108 regulates the output
voltage by adjusting the peak inductor current threshold.
POWER SAVE MODE
The ADP2108 smoothly transitions to the power save mode of
operation when the load current decreases below the power
save mode current threshold. When the ADP2108 enters power
save mode, an offset is induced in the PWM regulation level,
which makes the output voltage rise. When the output voltage
reaches a level approximately 1.5% above the PWM regulation
level, PWM operation is turned off. At this point, both power
switches are off, and the ADP2108 enters an idle mode. COUT
discharges until VOUT falls to the PWM regulation voltage, at
which point the device drives the inductor to make VOUT rise
again to the upper threshold. This process is repeated while the
load current is below the power save mode current threshold.
Power Save Mode Current Threshold
The power save mode current threshold is set to 80 mA. The
ADP2108 employs a scheme that enables this current to remain
accurately controlled, independent of VIN and VOUT levels. This
scheme also ensures that there is very little hysteresis between
the power save mode current threshold for entry to and exit from
the power save mode. The power save mode current threshold
is optimized for excellent efficiency over all load currents.
ENABLE/SHUTDOWN
The ADP2108 starts operation with soft start when the EN pin
is toggled from logic low to logic high. Pulling the EN pin low
forces the device into shutdown mode, reducing the shutdown
current below 1 μA.
Rev. G | Page 11 of 20
ADP2108
Data Sheet
SHORT-CIRCUIT PROTECTION
The ADP2108 includes frequency foldback to prevent output
current runaway on a hard short. When the voltage at the
feedback pin falls below half the target output voltage, indicating the possibility of a hard short at the output, the switching
frequency is reduced to half the internal oscillator frequency.
The reduction in the switching frequency allows more time for
the inductor to discharge, preventing a runaway of output current.
UNDERVOLTAGE LOCKOUT
To protect against battery discharge, undervoltage lockout
(UVLO) circuitry is integrated on the ADP2108. If the input
voltage drops below the 2.15 V UVLO threshold, the ADP2108
shuts down, and both the power switch and the synchronous
rectifier turn off. When the voltage rises above the UVLO threshold, the soft start period is initiated, and the part is enabled.
THERMAL PROTECTION
In the event that the ADP2108 junction temperature rises above
150°C, the thermal shutdown circuit turns off the converter.
Extreme junction temperatures can be the result of high current
operation, poor circuit board design, or high ambient temperature.
A 20°C hysteresis is included so that when thermal shutdown
occurs, the ADP2108 does not return to operation until the
on-chip temperature drops below 130°C. When coming out
of thermal shutdown, soft start is initiated.
SOFT START
After the EN pin is driven high, internal circuits start to power up.
The time required to settle after the EN pin is driven high is called
the power-up time. After the internal circuits are powered up, the
soft start ramp is initiated and the output capacitor is charged
linearly until the output voltage is in regulation. The time required
for the output voltage to ramp is called the soft start time.
Start-up time in the ADP2108 is the measure of when the
output is in regulation after the EN pin is driven high. Start-up
time consists of the power-up time and the soft start time.
CURRENT LIMIT
The ADP2108 has protection circuitry to limit the amount of
positive current flowing through the PFET switch and the
synchronous rectifier. The positive current limit on the power
switch limits the amount of current that can flow from the input
to the output. The negative current limit prevents the inductor
current from reversing direction and flowing out of the load.
100% DUTY OPERATION
With a drop in VIN or with an increase in ILOAD, the ADP2108
reaches a limit where, even with the PFET switch on 100% of
the time, VOUT drops below the desired output voltage. At this
limit, the ADP2108 smoothly transitions to a mode where the
PFET switch stays on 100% of the time. When the input conditions
change again and the required duty cycle falls, the ADP2108
immediately restarts PWM regulation without allowing overshoot on VOUT.
The ADP2108 has an internal soft start function that ramps the
output voltage in a controlled manner upon startup, thereby
limiting the inrush current. This prevents possible input voltage
drops when a battery or a high impedance power source is
connected to the input of the converter.
Rev. G | Page 12 of 20
Data Sheet
ADP2108
APPLICATIONS INFORMATION
ADIsimPower DESIGN TOOL
The ADP2108 is supported by ADIsimPower design tool set.
ADIsimPower is a collection of tools that produce complete
power designs optimized for a specific design goal. The tools
enable the user to generate a full schematic, bill of materials,
and calculate performance in minutes. ADIsimPower can
optimize designs for cost, area, efficiency, and parts count
while taking into consideration the operating conditions and
limitations of the IC and all real external components. For
more information about ADIsimPower design tools, refer to
www.analog.com/ADIsimPower. The tool set is available from
this website, and users can also request an unpopulated board
through the tool.
EXTERNAL COMPONENT SELECTION
Trade-offs between performance parameters such as efficiency
and transient response can be made by varying the choice of
external components in the applications circuit, as shown in
Figure 1.
Inductor
The high switching frequency of the ADP2108 allows for the
selection of small chip inductors. For best performance, use
inductor values between 0.7 μH and 3 μH. Recommended
inductors are shown in Table 6.
The peak-to-peak inductor current ripple is calculated using
the following equation:
I RIPPLE =
Vendor
Murata
Murata
Murata
Coilcraft
Toko
TDK
Model
LQM21PN1R0M
LQM31PN1R0M
LQM2HPN1R0M
LPS3010-102
MDT2520-CN
CPL2512T
Dimensions
2.0 × 1.25 × 0.5
3.2 × 1.6 × 0.85
2.5 × 2.0 × 1.1
3.0 × 3.0 × 0.9
2.5 × 2.0 × 1.2
2.5 × 1.5 × 1.2
ISAT (mA)
800
1200
1500
1700
1800
1500
DCR (mΩ)
190
120
90
85
100
100
Output Capacitor
Higher output capacitor values reduce the output voltage ripple
and improve load transient response. When choosing this value,
it is also important to account for the loss of capacitance due to
output voltage dc bias.
Ceramic capacitors are manufactured with a variety of dielectrics,
each with different behavior over temperature and applied voltage.
Capacitors must have a dielectric adequate to ensure the minimum
capacitance over the necessary temperature range and dc bias
conditions. X5R or X7R dielectrics with a voltage rating of 6.3 V
or 10 V are recommended for best performance. Y5V and Z5U
dielectrics are not recommended for use with any dc-to-dc
converter because of their poor temperature and dc bias
characteristics.
The worst-case capacitance accounting for capacitor variation
over temperature, component tolerance, and voltage is calculated using the following equation:
CEFF = COUT × (1 − TEMPCO) × (1 − TOL)
VOUT × (VIN − VOUT )
VIN × f SW × L
where:
CEFF is the effective capacitance at the operating voltage.
TEMPCO is the worst-case capacitor temperature coefficient.
TOL is the worst-case component tolerance.
where:
fSW is the switching frequency.
L is the inductor value.
The minimum dc current rating of the inductor must be greater
than the inductor peak current. The inductor peak current is
calculated using the following equation:
I PEAK = I LOAD( MAX ) +
Table 6. Suggested 1.0 μH Inductors
I RIPPLE
2
In this example, the worst-case temperature coefficient (TEMPCO)
over −40°C to +125°C is assumed to be 15% for an X5R dielectric.
The tolerance of the capacitor (TOL) is assumed to be 10%, and
COUT is 9.2 μF at 1.8 V, as shown in Figure 30.
Substituting these values in the equation yields
Inductor conduction losses are caused by the flow of current
through the inductor, which has an associated internal DCR.
Larger sized inductors have smaller DCR, which may decrease
inductor conduction losses. Inductor core losses are related to
the magnetic permeability of the core material. Because the
ADP2108 is a high switching frequency dc-to-dc converter,
shielded ferrite core material is recommended for its low core
losses and low EMI.
CEFF = 9.2 μF × (1 − 0.15) × (1 − 0.1) = 7.0 μF
To guarantee the performance of the ADP2108, it is imperative
that the effects of dc bias, temperature, and tolerances on the
behavior of the capacitors be evaluated for each application.
Rev. G | Page 13 of 20
ADP2108
Data Sheet
THERMAL CONSIDERATIONS
12
Because of the high efficiency of the ADP2108, only a small
amount of power is dissipated inside the ADP2108 package,
which reduces thermal constraints.
CAPACITANCE (µF)
10
8
However, in applications with maximum loads at high ambient
temperature, low supply voltage, and high duty cycle, the heat
dissipated in the package is great enough that it may cause the
junction temperature of the die to exceed the maximum
junction temperature of 125°C. If the junction temperature
exceeds 150°C, the converter goes into thermal shutdown. It
recovers when the junction temperature falls below 130°C.
6
4
0
0
1
2
3
4
5
DC BIAS VOLTAGE (V)
6
07375-007
2
Figure 30. Typical Capacitor Performance
The peak-to-peak output voltage ripple for the selected output
capacitor and inductor values is calculated using the following
equation:
VRIPPLE
VIN
I RIPPLE
=
≈
8 × f SW × COUT (2π × f SW )2 × L × COUT
Capacitors with lower equivalent series resistance (ESR) are
preferred to guarantee low output voltage ripple, as shown in
the following equation:
ESRCOUT ≤
VRIPPLE
I RIPPLE
The effective capacitance needed for stability, which includes
temperature and dc bias effects, is 7 µF.
Table 7. Suggested 10 μF Capacitors
Vendor
Murata
Taiyo Yuden
TDK
Type
X5R
X5R
X5R
Model
GRM188R60J106
JMK107BJ106
C1608JB0J106K
Case
Size
0603
0603
0603
Voltage
Rating (V)
6.3
6.3
6.3
Input Capacitor
Higher value input capacitors help to reduce the input voltage
ripple and improve transient response. Maximum input
capacitor current is calculated using the following equation:
I CIN ≥ I LOAD( MAX )
VOUT (VIN − VOUT )
VIN
Table 8. Suggested 4.7 μF Capacitors
Type
X5R
X5R
X5R
Model
GRM188R60J475
JMK107BJ475
C1608X5R0J475
TJ = TA + TR
where:
TJ is the junction temperature.
TA is the ambient temperature.
TR is the rise in temperature of the package due to power
dissipation.
The rise in temperature of the package is directly proportional
to the power dissipation in the package. The proportionality
constant for this relationship is the thermal resistance from the
junction of the die to the ambient temperature, as shown in the
following equation:
TR = θJA × PD
where:
TR is the rise in temperature of the package.
θJA is the thermal resistance from the junction of the die to the
ambient temperature of the package.
PD is the power dissipation in the package.
PCB LAYOUT GUIDELINES
Poor layout can affect ADP2108 performance, causing electromagnetic interference (EMI) and electromagnetic compatibility
(EMC) problems, ground bounce, and voltage losses. Poor
layout can also affect regulation and stability. A good layout is
implemented using the following rules:
•
To minimize supply noise, place the input capacitor as close to
the VIN pin of the ADP2108 as possible. As with the output
capacitor, a low ESR capacitor is recommended. The list of
recommended capacitors is shown in Table 8.
Vendor
Murata
Taiyo Yuden
TDK
The junction temperature of the die is the sum of the ambient
temperature of the environment and the temperature rise of the
package due to power dissipation, as shown in the following
equation:
Case
Size
0603
0603
0603
Voltage
Rating (V)
6.3
6.3
6.3
•
•
•
Rev. G | Page 14 of 20
Place the inductor, input capacitor, and output capacitor
close to the IC using short tracks. These components carry
high switching frequencies, and large tracks act as antennas.
Route the output voltage path away from the inductor and
SW node to minimize noise and magnetic interference.
Maximize the size of ground metal on the component side
to help with thermal dissipation.
Use a ground plane with several vias connecting to the component side ground to further reduce noise interference on
sensitive circuit nodes.
Data Sheet
ADP2108
EVALUATION BOARD
VIN
TB2
EN
VIN
A1
CIN
4.7µF
EN
A2
C1
TB5
VIN
SW
B
1
L1
1µH
2
GND
EN
FB
C2
U1
GND IN
VOUT
TB3
VOUT
COUT
10µF
TB4
GND OUT
07375-004
ADP2108
TB1
07375-005
07375-041
Figure 31. Evaluation Board Schematic
Figure 34. Recommended TSOT Top Layer
07375-042
07375-006
Figure 32. Recommended WLCSP Top Layer
Figure 35. Recommended TSOT Bottom Layer
Figure 33. Recommended WLCSP Bottom Layer
Rev. G | Page 15 of 20
ADP2108
Data Sheet
OUTLINE DIMENSIONS
1.060
1.020
0.980
2
1
A
BALL A1
IDENTIFIER
1.490
1.450
1.410
0.866
REF
C
0.50
BSC
TOP VIEW
(BALL SIDE DOWN)
0.657
0.602
0.546
B
0.50 BSC
BOTTOM VIEW
0.355
0.330
0.304
SIDE VIEW
(BALL SIDE UP)
COPLANARITY
0.04
0.330
0.310
0.290
0.280
0.250
0.220
06-11-2012-B
SEATING
PLANE
Figure 36. 5-Ball Wafer Level Chip Scale Package [WLCSP]
(CB-5-3)
Dimensions shown in millimeters
2.90 BSC
5
4
2.80 BSC
1.60 BSC
1
2
3
0.95 BSC
1.90
BSC
*1.00 MAX
0.10 MAX
0.50
0.30
0.20
0.08
SEATING
PLANE
8°
4°
0°
0.60
0.45
0.30
*COMPLIANT TO JEDEC STANDARDS MO-193-AB WITH
THE EXCEPTION OF PACKAGE HEIGHT AND THICKNESS.
Figure 37. 5-Lead Thin Small Outline Transistor Package [TSOT]
(UJ-5)
Dimensions shown in millimeters
Rev. G | Page 16 of 20
100708-A
*0.90 MAX
0.70 MIN
Data Sheet
ADP2108
ORDERING GUIDE
Model 1
ADP2108ACBZ-1.0-R7
ADP2108ACBZ-1.1-R7
ADP2108ACBZ-1.2-R7
ADP2108ACBZ-1.3-R7
ADP2108ACBZ-1.5-R7
ADP2108ACBZ-1.8-R7
ADP2108ACBZ-1.82-R7
ADP2108ACBZ-2.3-R7
ADP2108ACBZ-2.5-R7
ADP2108ACBZ-3.0-R7
ADP2108ACBZ-3.3-R7
ADP2108AUJZ-1.0-R7
ADP2108AUJZ-1.1-R7
ADP2108AUJZ-1.2-R7
ADP2108AUJZ-1.3-R7
ADP2108AUJZ-1.5-R7
ADP2108AUJZ-1.8-R7
ADP2108AUJZ-1.82-R7
ADP2108AUJZ-2.3-R7
ADP2108AUJZ-2.5-R7
ADP2108AUJZ-3.0-R7
ADP2108AUJZ-3.3-R7
ADP2108-1.0-EVALZ
ADP2108-1.1-EVALZ
ADP2108-1.2-EVALZ
ADP2108-1.3-EVALZ
ADP2108-1.5-EVALZ
ADP2108-1.8-EVALZ
ADP2108-1.82-EVALZ
ADP2108-2.3-EVALZ
ADP2108-2.5-EVALZ
ADP2108-3.0-EVALZ
ADP2108-3.3-EVALZ
ADP2108UJZ-REDYKIT
1
Temperature Range
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
Output
Voltage (V)
1.0
1.1
1.2
1.3
1.5
1.8
1.82
2.3
2.5
3.0
3.3
1.0
1.1
1.2
1.3
1.5
1.8
1.82
2.3
2.5
3.0
3.3
1.0
1.1
1.2
1.3
1.5
1.8
1.82
2.3
2.5
3.0
3.3
Package Description
5-Ball Wafer Level Chip Scale Package [WLCSP]
5-Ball Wafer Level Chip Scale Package [WLCSP]
5-Ball Wafer Level Chip Scale Package [WLCSP]
5-Ball Wafer Level Chip Scale Package [WLCSP]
5-Ball Wafer Level Chip Scale Package [WLCSP]
5-Ball Wafer Level Chip Scale Package [WLCSP]
5-Ball Wafer Level Chip Scale Package [WLCSP]
5-Ball Wafer Level Chip Scale Package [WLCSP]
5-Ball Wafer Level Chip Scale Package [WLCSP]
5-Ball Wafer Level Chip Scale Package [WLCSP]
5-Ball Wafer Level Chip Scale Package [WLCSP]
5-Lead Small Outline Package [TSOT]
5-Lead Small Outline Package [TSOT]
5-Lead Small Outline Package [TSOT]
5-Lead Small Outline Package [TSOT]
5-Lead Small Outline Package [TSOT]
5-Lead Small Outline Package [TSOT]
5-Lead Small Outline Package [TSOT]
5-Lead Small Outline Package [TSOT]
5-Lead Small Outline Package [TSOT]
5-Lead Small Outline Package [TSOT]
5-Lead Small Outline Package [TSOT]
Evaluation Board for 1.0 V [WLCSP]
Evaluation Board for 1.1 V [WLCSP]
Evaluation Board for 1.2 V [WLCSP]
Evaluation Board for 1.3 V [WLCSP]
Evaluation Board for 1.5 V [WLCSP]
Evaluation Board for 1.8 V [WLCSP]
Evaluation Board for 1.82 V [WLCSP]
Evaluation Board for 2.3 V [WLCSP]
Evaluation Board for 2.5 V [WLCSP]
Evaluation Board for 3.0 V [WLCSP]
Evaluation Board for 3.3 V [WLCSP]
Evaluation Board for Fixed Output Voltage,
1.2 V and 3.3 V [TSOT]
Z = RoHS Compliant Part.
Rev. G | Page 17 of 20
Package
Option
CB-5-3
CB-5-3
CB-5-3
CB-5-3
CB-5-3
CB-5-3
CB-5-3
CB-5-3
CB-5-3
CB-5-3
CB-5-3
UJ-5
UJ-5
UJ-5
UJ-5
UJ-5
UJ-5
UJ-5
UJ-5
UJ-5
UJ-5
UJ-5
Branding
LA6
LA7
LA8
LA9
LAA
LAD
LAE
LAF
LAG
LD9
LAH
LA6
LA7
LA8
LA9
LAA
LAD
LAE
LAF
LAG
LD9
LAH
ADP2108
Data Sheet
NOTES
Rev. G | Page 18 of 20
Data Sheet
ADP2108
NOTES
Rev. G | Page 19 of 20
ADP2108
Data Sheet
NOTES
©2008–2012 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D07375-0-6/12(G)
Rev. G | Page 20 of 20