Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR10100X series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Isolated mounting tab GENERAL DESCRIPTION QUICK REFERENCE DATA VR = 100 V k 1 a 2 IF(AV) = 10 A VF ≤ 0.74 V PINNING Schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. PIN SOD113 (SOT186A) DESCRIPTION case 1 cathode 2 anode case isolated The PBYR10100 series is supplied in the conventional leaded SOD113 package. 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VRRM VRWM VR IF(AV) IFRM IFSM IRRM Tj Tstg Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current Repetitive peak forward current Non-repetitive peak forward current Peak repetitive reverse surge current Operating junction temperature Storage temperature CONDITIONS MIN. MAX. UNIT - 100 - 100 V V Ths ≤ 115 ˚C - 100 V square wave; δ = 0.5; Ths ≤ 114 ˚C - 10 A square wave; δ = 0.5; Ths ≤ 114 ˚C - 20 A t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 135 150 A A - 1 A - 150 ˚C - 65 150 ˚C ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol R.M.S. isolation voltage from both terminals to external heatsink f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65% ; clean and dustfree Cisol Capacitance from both terminals f = 1 MHz to external heatsink November 1999 1 MIN. TYP. - - 10 MAX. UNIT 2500 V - pF Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR10100X series THERMAL RESISTANCES SYMBOL PARAMETER Rth j-hs Rth j-a Thermal resistance junction to heat sink Thermal resistance junction to ambient CONDITIONS MIN. in free air TYP. MAX. UNIT - - 4 K/W - 55 - K/W ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER VF Forward voltage IR Reverse current Cd Junction capacitance November 1999 CONDITIONS MIN. IF = 10 A; Tj = 125˚C IF = 20 A; Tj = 125˚C IF = 20 A VR = VRWM VR = VRWM; Tj = 125˚C VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C 2 - TYP. MAX. UNIT 0.64 0.79 0.94 5 5 420 0.74 0.90 1.00 150 15 - V V V µA mA pF Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR10100X series Forward dissipation, PF (W) 100 Ths(max) (C) 10 a = 1.57 9 1.9 2.2 8 6 10 150 C 118 125 C 1 100 C 126 4 PBYR10100 110 2.8 7 IR / mA 5 134 4 3 2 75 C 0.1 142 Tj = 50 C 1 150 9 0 0 1 2 3 4 5 6 7 Average forward current, IF(AV) (A) 8 0.01 Fig.1. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x √D. 0 50 VR/ V 100 Fig.4. Typical reverse leakage current; IR = f(VR); parameter Tj Cd/ pF PBYR20100CT 10000 Forward dissipation, PF (W) Ths(max) (C) 12 D = 1.0 10 102 110 0.5 1000 118 8 0.2 0.1 6 126 4 tp D = tp/T 134 100 142 2 T 150 0 0 2 4 6 8 10 12 Average forward current, IF(AV) (A) 14 10 1 Fig.2. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). 10 VR/ V 100 Fig.5. Typical junction capacitance; Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C. IF / A 10 50 Transient thermal impedance, Zth j-mb (K/W) Tj = 25 C Tj = 125 C 40 1 Max Typ 30 0.1 20 PD 0.01 tp D= 10 0.001 1us 0 0 0.5 1 VF / V 1.5 2 Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj November 1999 T 10us tp T t 100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYR10100 Fig.6. Transient thermal impedance; Zth j-mb = f(tp). 3 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR10100X series MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 (2x) 2 0,9 max (2x) 5,08 0,6 2,4 Fig.7. SOD59 (TO220AC). pin 1 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". November 1999 4 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR10100X series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1999 5 Rev 1.000