Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR30100WT series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance QUICK REFERENCE DATA VR = 60 V/ 80 V/ 100 V a2 3 a1 1 IO(AV) = 30 A VF ≤ 0.7 V k 2 GENERAL DESCRIPTION PINNING Schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. PIN The PBYR30100WT series is supplied in the conventional leaded SOT429 (TO247) package. SOT429 (TO247) DESCRIPTION 1 anode 1 2 cathode 3 anode 2 mounting cathode base 2 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. PBYR30 VRRM VRWM VR IO(AV) IFRM IFSM IRRM Tj Tstg Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature MAX. UNIT - 60WT 60 80WT 80 100WT 100 V - 60 80 100 V Tmb ≤ 139 ˚C - 60 80 100 V square wave; δ = 0.5; Tmb ≤ 124 ˚C - 30 A square wave; δ = 0.5; Tmb ≤ 124 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 30 A - 180 200 A A - 1 A - 150 ˚C - 65 175 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-mb per diode both diodes in free air Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient November 1998 MIN. - 1 TYP. MAX. UNIT 45 1.4 1 - K/W K/W K/W Rev 1.300 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR30100WT series ELECTRICAL CHARACTERISTICS characteristics are per diode at Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS VF Forward voltage IR Reverse current Cd Junction capacitance IF = 15 A; Tj = 125˚C IF = 30 A; Tj = 125˚C IF = 15 A VR = VRWM VR = VRWM; Tj = 125˚C VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C November 1998 MIN. 2 - TYP. MAX. UNIT 0.61 0.74 0.77 5 5 600 0.7 0.85 0.85 150 15 - V V V µA mA pF Rev 1.300 Philips Semiconductors Product specification Rectifier diodes Schottky barrier 20 PBYR30100WT series PBYR30100PT PF / W Tmb(max) / C Vo = 0.550 V Rs = 0.010 Ohms 122 100 129 10 IR/ mA PBYR30100PT D = 1.0 Tj/ C = 150 15 0.5 125 0.2 10 0.1 tp I D= 5 10 0 1 143 0.1 100 75 50 t T 0 tp T 136 150 26 20 0.01 10 20 IF(AV) / A Fig.1. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D. 15 PBYR30100 PF / W Tmb(max) / C 40 50 60 VR/ V 70 80 90 100 Fig.4. Typical reverse leakage current per diode; IR = f(VR); parameter Tj Cd/ pF 129 10000 136 1000 143 100 150 15 10 Vo = 0.550 V Rs = 0.010 Ohms 30 PBYR30100PT a = 1.57 1.9 2.2 10 2.8 4 5 0 5 0 10 1 IF(AV) / A Fig.2. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). IF / A 10 VR/ V 100 Fig.5. Typical junction capacitance per diode; Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C. PBYR30100PT 10 100 Transient thermal impedance, Zth j-mb (K/W) Tj = 25 C Tj = 125 C 80 1 Max Typ 60 0.1 40 PD 0.01 tp D= 20 0.001 1us 0 0 0.5 1 VF / V 1.5 2 Fig.3. Typical and maximum forward characteristic per diode; IF = f(VF); parameter Tj November 1998 T 10us tp T t 100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYR30100WT Fig.6. Transient thermal impedance per diode; Zth j-mb = f(tp). 3 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR30100WT series MECHANICAL DATA Dimensions in mm 5.3 max 16 max 1.8 Net Mass: 5 g 5.3 o 3.5 max 7.3 3.5 21 max 15.5 max seating plane 2.5 15.5 min 4.0 max 1 2 3 0.9 max 2.2 max 1.1 3.2 max 5.45 0.4 M 5.45 Fig.7. SOT429 (TO247); pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8". November 1998 4 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR30100WT series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1998 5 Rev 1.300