PRODUCT INFORMATION 750nm 1A354 850nm High-Performance PIN The very high speed and low capacitance of this GaAs PIN Photodiode makes it ideal for datacom and general purpose applications. Its double-lens optical system is designed for singlemode fiber as well as for multimode fiber with core diameter up to 62.5µm. And a reverse voltage of only 5 Volts makes interfacing to a preamplifier easy. Datacom, General Purpose Optical and Electrical Characteristics PARAMETER SYMBOL MIN. TYP. MAX. 0.35 0.45 UNIT TEST CONDITION A/W l=850nm GHz RL=50V f=1MHz Responsivity R Bandwidth fc 1 Capacitance (Fig. 4) C 1 2 pF Dark Current Id 0.4 1 nA (Fig.1&2) (Table 1) (25° C Case Temperature) Operating Conditions: VR=5V. Fiber: Single-mode to multimode 62.5/125µm. Absolute Maximum Ratings PARAMETER SYMBOL LIMIT Storage Temperature Tstg -55 to +1258C Operating Temperature Top -55 to +1258C Reverse Voltage VR 30V Soldering Temperature (2mm from the case for 10 sec) Tsld 2608C Thermal Characteristics Ø4.7 Ø1.5 0.6 PARAMETER SYMBOL Temperature Coefficient - Dark Current dId/dTj MIN. TYP. 5 MAX. UNIT %/8C 3.7 14 0.4 CASE ANODE 2.5 5.4 BOTTOM VIEW All dimensions in mm CATHODE The diode chip is isolated from the case. TO-46 Package With Lens 12627.11 1998-02-04 Europe: Tel (46) 8 58 02 45 00 Fax (46) 8 58 02 01 10 Tel (44) 1291 436180 Fax (44) 1291 436771 America: Tel 1-800-96MITEL Fax (613) 592-6909 Asia: Tel (65) 293 5312 Fax (65) 293 8527 1A354 750nm High-Performance PIN 850nm Typical Responsivity 0.45 A/W 80 80 RELATIVE RESPONSIVITY 0.45 A/W 60 40 r r = opt. Øc = 62.5µm 20 FIGURE 2 % 100 60 40 r z = opt. Øc = 62.5µm 20 z z 0 0 0.5 1.0 2.0 1.5 2.5 3.0 mm 0 z - AXIAL DISPLACEMENT OF FIBER FIGURE 3 % 20 60 40 80 120 µm r - RADIAL DISPLACEMENT OF FIBER pF 100 FIGURE 4 2.0 CAPACITANCE Table 1 62.5/125 mm 0.275 RELATIVE RESPONSIVITY 0.45 A/W 50/125 mm 0.20 RELATIVE RESPONSIVITY Core Diameter/Cladding Diameter Numerical Aperture 10/125 mm 0.11 FIGURE 1 % 100 50 1.0 0 0 600 700 800 WAVELENGTH 900 1000 nm 0 5 REVERSE VOLTAGE 10 V