PHILIPS BYM99

DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D118
BYM99
Ultra fast low-loss
controlled avalanche rectifier
Product specification
Supersedes data of June 1994
1996 Feb 19
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
BYM99
FEATURES
DESCRIPTION
• Glass passivated
Rugged glass SOD64 package, using
a high temperature alloyed
construction.
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack
,
2/3 pagek(Datasheet)
• Also available with preformed leads
for easy insertion.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
a
MAM104
Fig.1 Simplified outline (SOD64) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
−
600
V
VR
continuous reverse voltage
−
600
V
IF(AV)
average forward current
Ttp = 50 °C; lead length = 10 mm
see Fig. 2;
averaged over any 20 ms period;
see also Fig 6
−
1.8
A
Tamb = 60 °C; PCB mounting (see
Fig.10); see Fig. 3;
averaged over any 20 ms period;
see also Fig. 6
−
0.8
A
IFRM
repetitive peak forward current
Ttp = 50 °C; see Fig. 4
−
15
A
Tamb = 60 °C; see Fig. 5
−
7
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj = Tj max prior to surge;
VR = VRRMmax
−
40
A
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj = Tj max prior to
surge; inductive load switched off
−
10
mJ
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−65
+150
°C
1996 Feb 19
2
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
BYM99
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VF
forward voltage
IF = 3 A; Tj = Tj max; see Fig. 7
V(BR)R
reverse avalanche
breakdown voltage
IR = 0.1 mA
IR
reverse current
MIN.
TYP.
MAX.
−
−
1.95
V
−
−
3.60
V
700
−
−
V
VR = VRRMmax;
see Fig. 8
−
−
5
µA
VR = VRRMmax; Tj = 150 °C;
see Fig. 8
−
−
75
µA
when switched from IF = 0.5 A
to IR = 1 A; measured at
IR = 0.25 A; see Fig. 12
−
−
15
ns
IF = 3 A; see Fig. 7
trr
reverse recovery time
Cd
diode capacitance
f = 1 MHz; VR = 0 V; see Fig. 9
−
135
maximum slope of reverse
recovery current
when switched from IF = 1 A to
VR ≥ 30 V and dIF/dt = −1 A/µs;
see Fig.11
−
−
dI R
-------dt
UNIT
−
pF
3
A/µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
25
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
75
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.10.
For more information please refer to the “General Part of associated Handbook”.
1996 Feb 19
3
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
BYM99
GRAPHICAL DATA
MLB646
2.4
handbook, halfpage
I F(AV)
(A)
1.8
MLB647
2.0
I F(AV)
(A)
1.6
handbook, halfpage
lead length 10 mm
1.2
1.2
0.8
0.6
0.4
0
100
0
0
T tp (o C)
200
0
100
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.10.
Switched mode application.
Fig.2
Fig.3
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
o
T amb ( C)
200
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MLB648
handbook,16
full pagewidth
δ = 0.05
I FRM
(A)
12
0.1
8
0.2
0.5
4
1
0
10 2
10 1
1
10
10 2
10 3
t p (ms)
10 4
Ttp = 50°C; Rth j-tp = 25 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V.
Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Feb 19
4
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
BYM99
MLB649
8
handbook, full pagewidth
I FRM
(A)
δ = 0.05
6
0.1
4
0.2
2
0.5
1
0
10 2
10 1
1
10 2
10
10 3
10 4
t p (ms)
Tamb = 60 °C; Rth j-a = 75 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V.
Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MGC546
MLB645
4
8
handbook, halfpage
P
(W)
handbook, halfpage
a=3
2.5
2
IF
(A)
1.57 1.42
3
6
2
4
1
2
0
0
0
1
IF(AV) (A)
2
0
2
4
VF (V)
6
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Fig.6
Dotted line: Tj = 150 °C.
Solid line: Tj = 25 °C.
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
1996 Feb 19
Fig.7
5
Forward current as a function of forward
voltage; maximum values.
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
BYM99
MGC547
2
10halfpage
handbook,
MGC548
2
10halfpage
handbook,
IR
(µA)
Cd
(pF)
10
1
0
100
10
200
o
Tj ( C)
1
102
10
VR (V)
103
f = 1 MHz; Tj = 25 °C.
VR = VRRMmax.
Fig.8
Reverse current as a function of junction
temperature; maximum values.
Fig.9
Diode capacitance as a function of reverse
voltage; typical values.
50
handbook, halfpage
25
IF halfpage
ndbook,
dI F
dt
7
t rr
50
10% t
dI R
dt
100%
2
IR
MGC499
3
MGA200
Dimensions in mm.
Fig.10 Device mounted on a printed-circuit board.
1996 Feb 19
Fig.11 Reverse recovery definitions.
6
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
DUT
handbook, full pagewidth
BYM99
IF
(A)
+
10 Ω
0.5
25 V
t rr
1Ω
50 Ω
0
t
0.25
0.5
IR
(A)
1
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.12 Test circuit and reverse recovery time waveform and definition.
1996 Feb 19
7
MAM057
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
BYM99
,
PACKAGE OUTLINE
k
handbook, full pagewidth
4.5
max
28 min
5.0 max
Dimensions in mm.
The marking band indicates the cathode.
28 min
a
1.35
max
MBC049
Fig.13 SOD64.
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Feb 19
8