MOTOROLA MMBR571LT1

Order this document
by MMBR571LT1/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Designed for low noise, wide dynamic range front–end amplifiers and
low–noise VCO’s. Available in a surface–mountable plastic packages. This
Motorola series of small–signal plastic transistors offers superior quality and
performance at low cost.
• High Gain–Bandwidth Product
fT = 8.0 GHz (Typ) @ 50 mA
• Low Noise Figure
NFmin = 1.6 dB (Typ) @ f = 1.0 GHz (MRF5711LT1, MRF571)
• High Gain
GNF = 17 dB (Typ) @ 30 mA/500 MHz (MMBR571LT1)
• High Power Gain
Gpe (matched) = 13.5 dB (Typ) (MRF5711LT1)
• State–of–the–Art Technology
Fine Line Geometry
Ion–Implanted Arsenic Emitters
Gold Top Metallization and Wires
Silicon Nitride Passivation
• Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
IC = 80 mA
LOW NOISE
HIGH–FREQUENCY
TRANSISTORS
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
MMBR571LT1
CASE 317–01, STYLE 2
MACRO–X
MRF571
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ Tcase = 75°C
MMBR571LT1, MRF5711LT1
Derate linearly above Tcase = 75°C @
Total Device Dissipation (1) @ TC = 75°C
Derate above 75°C
Symbol
Value
Unit
VCEO
VCBO
10
Vdc
20
Vdc
VEBO
IC
3.0
Vdc
80
mA
0.33
4.44
W
mW/°C
PD
0.58
7.73
Watts
mW/°C
Tstg
– 55 to
+150
°C
PD(max)
MRF571
Operating and Storage Temperature
CASE 318A–05, STYLE 1
SOT–143
LOW PROFILE
MRF5711LT1
THERMAL CHARACTERISTICS
Rating
Thermal Resistance, Junction to Case
MRF5711LT1, MMBR571LT1
Thermal Resistance, Junction to Case
MRF571
Maximum Junction Temperature
Symbol
Max
Unit
RθJC
225
°C/W
RθJC
130
°C/W
TJmax
150
°C
DEVICE MARKING
MMBR571LT1 = 7X
MRF5711LT1 = 02
NOTE:
1. Case temperature measured on collector lead immediately adjacent to body of package.
REV 8
RF DEVICE DATA
MOTOROLA
Motorola, Inc. 1997
MMBR571LT1 MRF571 MRF5711LT1
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)CEO
V(BR)CBO
10
12
—
Vdc
20
—
—
Vdc
V(BR)EBO
ICBO
2.5
—
—
Vdc
—
—
10
µAdc
hFE
50
—
300
—
—
—
0.7
0.75
1.0
1.0
—
—
8.0
8.0
—
—
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0)
Collector–Base Breakdown Voltage (IC = 0.1 mA, IE = 0)
Emitter–Base Breakdown Voltage (IE = 50 µAdc, IC = 0)
Collector Cutoff Current (VCB = 8.0 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain (IC = 30 mAdc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
(VCB = 6.0 Vdc, IE = 0, f = 1.0 MHz)
MMBR571LT1
MRF5711LT1, MRF571
Ccb
Current Gain–Bandwidth Produc
(VCE = 5.0 Vdc, IC = 50 mAdc, f = 1.0 GHz)
(VCE = 8.0 Vdc, IC = 50 mAdc, f = 1.0 GHz)
MMBR571LT1
MRF5711LT1, MRF571
pF
fT
GHz
FUNCTIONAL TESTS
Gain @ Noise Figure
(IC = 10 mAdc, VCE = 6.0 Vdc)
MRF571
MRF571
f = 0.5 GHz
f = 1.0 GHz
GNF
—
10
16.5
12
—
—
dB
Noise Figure
(IC = 10 mAdc, VCE = 6.0 Vdc)
MRF571
MRF571
f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
NF
—
—
—
1.0
1.5
2.8
—
2.0
—
dB
MMBR571LT1
f = 0.5 GHz
f = 1.0 GHz
f = 1.0 GHz
—
—
—
16.5
10.5
13.5
—
—
—
—
—
—
2.0
2.6
2.2
—
—
—
NFmin
—
1.6
—
dB
|S21|2
9.0
10
—
dB
Gain @ Noise Figure
(IC = 10 mAdc, VCE = 5.0 Vdc)
GNF
(IC = 10 mA, VCE = 6.0 Vdc)
Noise Figure
(IC = 10 mAdc, VCE = 5.0 Vdc)
MRF5711LT1
(IC = 10 mAdc, VCE = 6.0 Vdc)
Noise Figure
(VCE = 6.0 V, IC = 10 mA, f = 1.0 GHz)
MRF5711LT1
dB
NF
MMBR571LT1
dB
f = 0.5 GHz
f = 1.0 GHz
f = 1.0 GHz
MRF5711LT1
Power Gain in 50 Ω System (VCE = 6.0 V, IC = 10 mA, f = 1.0 GHz)
MRF5711LT1
G A MAX, MAXIMUM AVAILABLE GAIN (dB)
25
GAMAX
20
+
|S21|
(k
|S12|
" Ǹ(k2 – 1) ), k w 1
15
VCE = 5 V
IC = 30 mA
10
5
0
0.4
0.6
1
2
f, FREQUENCY (GHz)
Figure 1. Maximum Available Gain
versus Frequency
MMBR571LT1 MRF571 MRF5711LT1
2
3
f T, CURRENT GAIN-BANDWIDTH PRODUCT (GHz)
TYPICAL CHARACTERISTICS
MMBR571LT1
10
8
6
4
2
0
VCE = 5 V
f = 1 GHz
0
10
20
30
40
50
60
70
80
90
100
IC, COLLECTOR CURRENT (mA)
Figure 2. Current Gain–Bandwidth versus
Collector Current @ 1.0 GHz
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
MMBR571LT1
4
3
2
Cib
1
f = 1 MHz
0
1
1.5
Cob
1
Ccb
0.5
f = 1 MHz
0
3
0
1
2
3
4
5
6
7
Figure 3. Input Capacitance versus
Emitter Base Voltage
Figure 4. Output Capacitances versus
Collector–Base Voltage
10
SOT–23 MMBR571LT1
SOT–23 MMBR571LT1
5
f = 500 MHz
4
12
1 GHz
8
4
f = 1 GHz
3
2
f = 500 MHz
1
VCE = 5 V
0
10
20
30
40
VCE = 5 V
0
50
0
10
IC, COLLECTOR CURRENT (mA)
2
NF
0.3
0.5
1
1.5
G U MAX AND |S21 | 2 (dB)
3
5
0
0.2
50
30
NF, NOISE FIGURE (dB)
4
VCE = 5 V
IC = 10 mA
15
10
40
SOT–23 MMBR571LT1
5
GNF
30
Figure 6. Noise Figure versus Collector Current
SOT–23 MMBR571LT1
25
20
20
IC, COLLECTOR CURRENT (mA)
Figure 5. Gain at Noise Figure versus
Collector Current
G NF , GAIN AT NOISE FIGURE (dB)
9
Vcb, COLLECTOR–BASE VOLTAGE (Vdc)
16
0
8
VBE, BASE–EMITTER VOLTAGE (Vdc)
20
G NF , GAIN AT NOISE FIGURE (dB)
2
2
NF, NOISE FIGURE (dB)
0
SOT–23 MMBR571LT1
2.5
Ccb , C ob, OUTPUT CAPACITANCES (pF)
Cib, INPUT CAPACITANCE (pF)
SOT–23 MMBR571LT1
GUMAX =
25
|S21|2
(1 – |S11|2)(1 – |S22|2)
20
VCE = 5 V
IC = 30 mA
GUMAX
15
1
10
0
2
5
|S21|2
0.2
0.3
0.6
1
1.5
f, FREQUENCY (GHz)
f, FREQUENCY (GHz)
Figure 7. Gain at Noise Figure and Noise
Figure versus Frequency
Figure 8. Maximum Unilateral Gain and
Insertion Gain versus Frequency
MOTOROLA RF DEVICE DATA
2
MMBR571LT1 MRF571 MRF5711LT1
3
2
5
1.6
f = 1 MHz
NF, NOISE FIGURE (dB)
C cb, COLLECTOR-BASE CAPACITANCE (pF)
TYPICAL CHARACTERISTICS
MRF5711LT1
1.2
0.8
VCE = 6 Vdc
IC = 5 mA
4
CKT = HP 11608A
Zo = 50 Ω
ΓS = ΓL = 0
NF
3
2
1
0.4
0
0
2
4
6
8
0
0.15 0.2
10
0.5
1
2
Vcb, COLLECTOR–BASE VOLTAGE (VOLTS)
f, FREQUENCY (GHz)
Figure 9. Collector–Base Capacitance
versus Collector–Base Voltage
Figure 10. 50 W Noise Figure
versus Frequency
VCE = 6 Vdc
VBE
D.U.T.
*MICROLAB
*HW–XXN
*AS APPLICABLE
*
RF OUTPUT
RF INPUT
**SLUG TUNER
*BIAS
TEE
**SLUG TUNER
*BIAS
TEE
**MICROLAB/FXR
**SF — 11N < 1 GHz
**SF — 31N > 1 GHz
Figure 11. Functional Circuit Schematic
MMBR571LT1 MRF571 MRF5711LT1
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
MRF5711LT1
CKT = FIGURE 3
4
24
3
GNF
NF
16
2
8
GNF
12
G NF , GAIN (dB)
G NF , GAIN (dB)
32
16
VCE = 6 Vdc
f = 1 GHz
CKT = FIGURE 3
8
4
NF
4
1
3
2
NF, NOISE FIGURE (dB)
5
VCE = 6 Vdc
IC = 5 mA
NF, NOISE FIGURE (dB)
40
1
0
0.15 0.2
0.5
1
f, FREQUENCY (GHz)
2
0
0
0
Figure 12. Gain and Noise Figure
versus Frequency
50
VCE = 6 Vdc
f = 500 MHz
CKT = FIGURE 3
12
4
3
6
2
NF
1
NF, NOISE FIGURE (dB)
GNF
f T, GAIN BANDWIDTH PRODUCT (GHz)
10
18
G NF , GAIN (dB)
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 13. Gain and Noise Figure
versus Collector Current
24
0
f = 1 GHz
VCE = 8 Vdc
Zo = 50 Ω
8
6
4
2
0
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
0
Figure 14. Gain and Noise Figure
versus Collector Current
|S21|2
VCE = 8 Vdc
IC = 50 mA
Zo = 50 Ω
8
0.5
1
f, FREQUENCY (GHz)
Figure 16. GUmax and |S21|2
versus Frequency
MOTOROLA RF DEVICE DATA
2
|S 21| 2, INSERTION GAIN (dB)
GUmax
24
0
0.15 0.2
40
60
80
IC, COLLECTOR CURRENT (mA)
100
32
|S21|2
GUmax =
(1 – |S11|2)(1 – |S22|2)
32
16
20
Figure 15. Gain Bandwidth Product
versus Collector Current
40
G Umax AND |S 21| 2, GAIN (dB)
10
Zo = 50 Ω
VCE = 6 Vdc
f = 200 MHz
24
500 MHz
16
1 GHz
8
0
2 GHz
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 17. Insertion Gain versus
Collector Current
MMBR571LT1 MRF571 MRF5711LT1
5
MMBR571LT1
+j50
+90°
+j25
+60°
+120°
+j100
f = 0.2 GHz
+j150
S21
+150°
+j10
+j250
2
S11
10
0
0.5
1.5
1
25
0.5
0.5
f = 0.2 GHz
+j500
100
2 50
1.5 1 S
22
0.5
f = 0.2 GHz
150
250
500
180°
14 12 10 8 6
4 2
1
1
1.5
2
0.1
S21
– j500
+30°
2
1.5 S12
0.2
0.3
0°
0.4
S12
f = 0.2 GHz
– j250
– j10
– 30°
–150°
– j150
– j100
– j25
– 60°
–120°
– 90°
– j50
Figure 18. Input/Output Reflection Coefficients
versus Frequency
VCE = 5.0 V, IC = 30 mA
Figure 19. Forward/Reverse Transmission
Coefficients versus Frequency
VCE = 5.0 V, IC = 30 mA
S11
S21
S12
S22
VCE
(Volts)
IC
(mA)
f
(MHz)
|S11|
∠Ăφ
|S21|
∠Ăφ
|S12|
∠Ăφ
|S22|
∠Ăφ
5.0
5.0
200
500
1000
1500
2000
0.68
0.52
0.50
0.51
0.52
– 82 –
– 142–
179
161
143
8.41
4.62
2.57
1.82
1.48
126
93
72
57
45
0.07
0.10
0.14
0.19
0.24
53
46
53
58
59
0.61
0.35
0.26
0.24
0.22
– 45
– 60
– 71
– 77
– 86
15
200
500
1000
1500
2000
0.46
0.43
0.44
0.45
0.46
– 125–
– 169–
168
152
137
13.65
6.03
3.20
2.21
1.80
108
86
72
58
48
0.05
0.09
0.16
0.22
0.29
60
66
67
64
59
0.35
0.17
0.14
0.11
0.10
– 73
– 94
– 111
– 118
– 131
30
200
500
1000
1500
2000
0.42
0.41
0.42
0.44
0.44
– 148–
– 177–
165
151
135
14.79
6.31
3.35
2.29
1.84
102
84
71
59
48
0.04
0.09
0.16
0.23
0.30
68
72
70
65
60
0.26
0.14
0.12
0.11
0.10
– 87
– 115
– 135
– 144
– 157
50
200
500
1000
1500
2000
0.41
0.42
0.43
0.44
0.45
– 159–
179
163
148
134
15.14
6.38
3.35
2.32
1.84
98
83
70
58
48
0.04
0.09
0.16
0.23
0.30
73
75
71
66
60
0.21
0.13
0.12
0.10
0.09
– 96
– 124
– 143
– 151
– 163
Table 1. MMBR571LT1 Common Emitter S–Parameters
MMBR571LT1 MRF571 MRF5711LT1
6
MOTOROLA RF DEVICE DATA
j1.0
j0.5
j2.0
j0.2
1.2
20.4
19
VCE = 5 V
IC = 10 mA
= Area of Instability
1.4
18
17
1.6
1.8
– j0.2
f (GHz)
0.5
NF OPT ΓMS NF OPT
1.20 dB
0.36 ∠ 104°
Rn
K
7
0.63
Rn
K
8
0.94
– j2.0
– j0.5
– j1.0
0.5
0.2
1.0
2.0
Figure 20. MRF5711LT1 Constant Gain and Noise Figure Contours
(f = 0.5 GHz)
j1.0
j0.5
j2.0
j0.2
VCE = 5 V
IC = 10 mA
= Area of Instability
1.7
6.4
15
14
1.9 2.1
2.3
– j0.2
f (GHz)
1.0
NF OPT ΓMS NF OPT
1.70 dB
0.20 ∠ 162°
– j2.0
– j0.5
– j1.0
0.2
0.5
1.0
2.0
Figure 21. MRF5711LT1 Constant Gain and noise Figure Contours
(f = 1.0 GHz)
MOTOROLA RF DEVICE DATA
MMBR571LT1 MRF571 MRF5711LT1
7
S11
S21
S12
S22
VCE
(Vdc)
IC
(mA)
f
(MHz)
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
6.0
5.0
200
500
1000
1500
2000
0.79
0.72
0.69
0.66
0.65
– 90
– 144
– 177
164
147
10.9
5.7
3.0
2.0
1.6
128
96
75
59
47
0.06
0.08
0.09
0.10
0.12
46
28
28
32
38
0.70
0.42
0.31
0.34
0.32
– 45
– 66
– 77
– 89
– 94
10
200
500
1000
1500
2000
0.72
0.69
0.67
0.64
0.64
– 115
– 160
174
159
143
15.2
6.9
3.6
2.4
1.8
118
92
74
60
49
0.05
0.06
0.08
0.10
0.12
41
34
42
46
50
0.55
0.30
0.21
0.23
0.20
– 66
– 92
– 108
– 114
– 116
50
200
500
1000
1500
2000
0.67
0.67
0.66
0.63
0.58
– 159
179
174
151
138
20
8.2
3.8
2.7
2.1
102
85
72
61
51
0.02
0.04
0.07
0.10
0.14
48
58
65
64
62
0.33
0.33
0.21
0.22
0.17
– 111
– 142
– 158
– 158
– 165
5.0
200
500
1000
1500
2000
0.80
0.72
0.70
0.66
0.61
– 87
– 141
– 177
166
149
11.1
5.9
3.1
2.1
1.6
130
97
75
60
47
0.06
0.08
0.09
0.10
0.12
47
30
28
32
39
0.71
0.44
0.33
0.35
0.35
– 42
– 60
– 68
– 80
– 85
10
200
500
1000
1500
2000
0.72
0.68
0.66
0.64
0.60
– 113
– 159
175
160
144
15.6
7.2
3.7
2.5
2.0
119
92
74
61
49
0.05
0.06
0.08
0.09
0.13
42
34
41
47
50
0.56
0.31
0.21
0.23
0.21
– 61
– 82
– 92
– 101
– 103
50
200
500
1000
1500
2000
0.66
0.65
0.64
0.61
0.58
– 156
– 179
164
153
137
20.9
8.6
4.3
2.9
2.3
103
85
72
61
51
0.02
0.04
0.07
0.10
0.13
48
58
65
65
64
0.31
0.19
0.16
0.17
0.14
– 101
– 128
– 144
– 142
– 145
8.0
Table 2. MRF5711LT1 Common Emitter S–Parameters
MMBR571LT1 MRF571 MRF5711LT1
8
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
MRF571
Cib, INPUT CAPACITANCE (pF)
C cb, COLLECTOR-BASE CAPACITANCE (pF)
1.25
1
0.75
0.5
0.25
2
1
f = 1 MHz
0
f = 1 MHz
0
0
1
2
3
4
5
6
7
8
Vcb, COLLECTOR–BASE VOLTAGE (Vdc)
9
10
0
Figure 22. Ccb, Collector–Base Capacitance
versus Voltage
1
2
VBE, BASE–EMITTER VOLTAGE (Vdc)
3
Figure 23. Cib, Input Capacitance
versus Emitter Base Voltage
30
20
5
5
GNF
20
3
NF
15
2
10
0
0.15 0.2
1
0.3
0.6
1
f, FREQUENCY (GHz)
1.5
2
Figure 24. Gain at Noise Figure and Noise Figure
versus Frequency
MOTOROLA RF DEVICE DATA
3
0
NF, NOISE FIGURE (dB)
4
4
GNF @ 1 GHz
3
10
NF @ 1 GHz
2
NF @ 500 MHz
NF, NOISE FIGURE (dB)
VCE = 6 V
IC = 5 mA
25
G NF , GAIN AT NOISE FIGURE (dB)
G NF , GAIN AT NOISE FIGURE (dB)
GNF @ 500 MHz
1
VCE = 6 V
0
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
0
50
Figure 25. Gain at Noise Figure and Noise Figure
versus Collector Current
MMBR571LT1 MRF571 MRF5711LT1
9
10
30
8
G A MAX, MAXIMUM AVAILABLE GAIN (dB)
f T, CURRENT GAIN-BANDWIDTH PRODUCT (GHz)
TYPICAL CHARACTERISTICS
MRF571
VCE = 5 Vdc
8 Vdc
6
4
2
f = 1 GHz
0
0
10
20
30
40
50
60
70
IC, COLLECTOR CURRENT (mA)
80
90
27
24
12
9
6
3
0.6
1
2
f, FREQUENCY (GHz)
3
30
+ 40
3RD ORDER INTERCEPT
+ 30
1 dB
COMP. PT.
+ 20
VCC = 8 Vdc
IC = 50 mA
+ 10
f = 500 MHz
1000 MHz
–5
0
3RD ORDER PRODUCTS
+ 5 +10 +15 + 2 + 25
Pin, INPUT POWER0(dBm)
+ 30 + 35 + 40
Figure 28. 1.0 dB Compression Point
and Third Order Intercept
MMBR571LT1 MRF571 MRF5711LT1
10
G Umax AND |S21 | 2 GAIN (dB)
Pout , OUTPUT POWER (dBm)
VCE = 8 V
IC = 50 mA
15
Figure 27. GAmax, Maximum Available Gain
versus Frequency
+ 50
0
–10
ǸK2 – 1), K ≥ 1
18
0
0.4
100
|S21|
(K
|S12|
±
21
Figure 26. fT, Current Gain–Bandwidth Product
versus Collector Current
+5
GAmax =
GUmax =
25
20
|S21|2
(1 – |S11|2)(1 – |S22|2)
GUmax
VCE = 8 V
IC = 50 mA
|S21|2
15
10
5
0.15 0.2
0.3
0.6
1
f, FREQUENCY (GHz)
1.5
2
3
Figure 29. GUmax and |S21|2
versus Frequency
MOTOROLA RF DEVICE DATA
MRF571
+ j50
+ 90°
+105°
+ j25
+ 75°
+ 60°
+120°
+ j100
+ 45°
+135°
+ j150
+150°
+ j10
2
+ j250
1.5
10
0
+165°
S21
+ j500
1
25
50
S11
2
100
1.5 1
0.5
150
180°
250 500
– j500
0.5 S22
– j10
12 10 8 6 4
1 1.5
2
0.5
+ 15°
S12
– j150
– 15°
– 30°
– 45°
–135°
f = 0.2 GHz
– j100
0°
S12
0.1
–150°
f = 0.2 GHz
– j25
0.5
2
+ 30°
1.5
1
S21
–165°
– j250
2
f = 0.2 GHz
f = 0.2 GHz
– 60°
–120°
–105°
– 90°
– 75°
– j50
Figure 30. Input/Output Reflection Coefficients
versus Frequency (GHz)
VCE = 6.0 V, IC = 5.0 mA
Figure 31. Forward/Reverse Transmission
Coefficients versus Frequency (GHz)
VCE = 6.0 V, IC = 5.0 mA
S11
S21
S12
S22
VCE
(Volts)
IC
(mA)
f
(MHz)
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
6.0
5
200
500
1000
1500
2000
0.74
0.62
0.61
0.65
0.70
– 86
– 143
178
158
140
10.5
5.5
3.0
2.0
1.6
129
97
78
62
51
0.06
0.08
0.09
0.11
0.14
48
33
37
44
51
0.69
0.41
0.28
0.26
0.27
– 42
– 59
– 69
– 88
– 99
10
200
500
1000
1500
2000
0.64
0.58
0.59
0.63
0.67
– 111
– 160
168
151
134
15
6.9
3.7
2.5
2.0
118
93
77
64
53
0.04
0.06
0.09
0.12
0.16
44
42
52
56
57
0.53
0.27
0.16
0.16
0.16
– 59
– 77
– 91
– 113
– 118
50
200
500
1000
1500
2000
0.56
0.57
0.60
0.62
0.66
– 160
176
156
152
127
20.4
8.4
4.4
2.9
2.4
102
86
75
64
53
0.02
0.05
0.09
0.13
0.18
57
67
70
68
62
0.27
0.14
0.11
0.13
0.11
– 98
– 130
– 164
– 175
– 178
5
200
500
1000
1500
2000
0.75
0.62
0.60
0.64
0.69
– 83
– 140
– 179
159
141
10.7
5.1
3.7
2.1
1.7
129
98
78
62
52
0.06
0.08
0.09
0.10
0.13
49
34
38
45
52
0.71
0.43
0.31
0.29
0.29
– 39
– 54
– 62
– 80
– 91
10
200
500
1000
1500
2000
0.64
0.52
0.52
0.52
0.57
– 99
– 152
170
150
133
15.1
7.1
3.7
2.5
2.0
120
94
76
62
51
0.05
0.07
0.10
0.13
0.18
46
45
54
56
55
0.54
0.32
0.15
0.16
0.16
– 60
– 75
– 82
– 108
– 107
50
200
500
1000
1500
2000
0.52
0.52
0.56
0.54
0.59
– 153
178
157
139
126
19.6
8.1
4.1
2.8
2.2
102
86
73
62
52
0.03
0.05
0.10
0.13
0.19
56
67
70
68
63
0.28
0.16
0.06
0.11
0.10
– 92
– 98
– 130
– 146
– 137
8.0
Table 3. MRF571 Common Emitter S–Parameters
MOTOROLA RF DEVICE DATA
MMBR571LT1 MRF571 MRF5711LT1
11
+ j50
+ j25
+ j100
+ j150
ΓMS NF OPT
0.9
+ j10
18
10
0
25
17
2
1
+ j250
1.5
VCE = 6.0 V, IC = 5.0 mA
f = 500 MHz
— REGION OF INSTABILITY
+ j500
16
50
100
150
250
500
f (GHz)
NF OPT (dB)
Rn (Ω)
NF50 Ω (dB)
0.5
0.9
9.3
1.3
– j500
– j250
– j10
ΓMS NF OPT
K
0.49 ∠ 74°
0.58
– j150
– j100
– j25
– j50
+ j50
+ j25
+ j100
+ j150
2
+ j10
1.5
ΓMS NF OPT
12
14
0
10
25
10
50
3
+ j250
2.5
100
+ j500
150
250
VCE = 6.0 V, IC = 5.0 mA
f = 1.0 GHz
f (GHz)
1.0
500
NF OPT (dB) Rn (Ω) NF50 Ω (dB) ΓMS NF OPT
1.5
7.5
2.2
0.48 ∠ 134°
ΓMS
– j500
– j250
– j10
ΓMS
ΓML
0.89 ∠ –179° 0.81 ∠ 66°
– j150
– j100
– j25
– j50
Figure 32. MRF571 Constant Gain and Noise Figure Contours
MMBR571LT1 MRF571 MRF5711LT1
12
MOTOROLA RF DEVICE DATA
RFC
RFC
VBB
C7
VCC
C8
C9
C10
FB
TL9
R1
TL10
FB
C5
RF
INPUT
TL1
C
1
C6
TL2
TL3
TL4
D.U.T.
TL5
TL6
C2
C1, C4, C5, C6, C8, C9 — 100 pF Chip Capacitor
C2, C3 — 0.8 – 8.0 pF Johanson Capacitor
C7, C10 — 10 µF Tantalum Capacitor
R1 — 1.0 kOhms Res.
RFC — VK–200, Ferroxcube
FB — Ferrite Bead, Ferroxcube 56–590–65/3B
Board Material — 0.0625″ Glass Teflon, εr = 2.55
TL7
C
4
TL8
RF
OUTPUT
C3
TL1, TL7, TL8 — Microstrip 0.162″ x 0.600″
TL2 — Microstrip 0.162″ x 1.060″
TL3 — Microstrip 0.162″ x 0.700″
TL4, TL5 — Microstrip 0.162″ x 0.440″
TL6 — Microstrip 0.162″ x 1.140″
TL8, TL9 — Microstrip 0.020″ x 2.130″
Figure 33. MRF571 Test Circuit Schematic
MOTOROLA RF DEVICE DATA
MMBR571LT1 MRF571 MRF5711LT1
13
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
A
L
3
B S
1
2
V
G
C
H
D
J
K
DIM
A
B
C
D
G
H
J
K
L
S
V
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
CASE 318–08
ISSUE AF
MMBR571LT1
L
A
NOTES:
1. DIMENSION D NOT APPLICABLE IN ZONE N.
D
1
4
2
3
K
N 4 PL
G
C
DIM
A
C
D
F
G
K
L
N
MILLIMETERS
MIN
MAX
4.44
5.21
1.90
2.54
0.84
0.99
0.20
0.30
0.76
1.14
7.24
8.13
10.54
11.43
–––
1.65
STYLE 2:
PIN 1.
2.
3.
4.
F
INCHES
MIN
MAX
0.175
0.205
0.075
0.100
0.033
0.039
0.080
0.012
0.030
0.045
0.285
0.320
0.415
0.450
–––
0.065
COLLECTOR
EMITTER
BASE
EMITTER
SEATING
PLANE
CASE 317–01
ISSUE E
MRF571
MMBR571LT1 MRF571 MRF5711LT1
14
MOTOROLA RF DEVICE DATA
NOTES:
4. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
5. CONTROLLING DIMENSION: MILLIMETER.
A
L
G
3
4
S
B
1
F
H
2
D
J
C
R
K
DIM
A
B
C
D
F
G
H
J
K
L
R
S
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
2.80
3.04
0.110
0.120
1.20
1.39
0.047
0.055
0.84
1.14
0.033
0.045
0.39
0.50
0.015
0.020
0.79
0.93
0.031
0.037
1.78
2.03
0.070
0.080
0.013
0.10 0.0005
0.004
0.08
0.15
0.003
0.006
0.46
0.60
0.018
0.024
0.445
0.60 0.0175
0.024
0.72
0.83
0.028
0.033
2.11
2.48
0.083
0.098
STYLE 1:
PIN 1.
2.
3.
4.
COLLECTOR
EMITTER
EMITTER
BASE
CASE 318A–05
ISSUE R
MRF5711LT1
MOTOROLA RF DEVICE DATA
MMBR571LT1 MRF571 MRF5711LT1
15
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
Mfax is a trademark of Motorola, Inc.
How to reach us:
USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;
P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447
JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1,
Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488
Mfax: [email protected] – TOUCHTONE 602–244–6609
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
– US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
INTERNET: http://motorola.com/sps
MMBR571LT1 MRF571 MRF5711LT1
◊
16
MMBR571LT1/D
MOTOROLA RF DEVICE
DATA