WMBT5551LT1 COLLECTOR 3 NPN Silicon Transistor 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 160 Vdc Collector – Emitter Voltage VCEO Collector – Base Voltage VCBO 180 Vdc Emitter – Base Voltage VEBO 6.0 Vdc IC 600 mAdc Collector Current — Continuous 3 1 2 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C PD mW mW/°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature °C/W RqJA TJ, Tstg – 55 to +150 °C DEVICE MARKING MMBT5550LT1 = M1F; MMBT5551LT1 = G1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 160 — — 180 — — 6.0 — Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Vdc V(BR)EBO Collector Cutoff Current Vdc ICBO — — — — (VCB = 120 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0, TA = 100°C) Emitter Cutoff Current (VEB =5.0 Vdc, IC = 0) Wing Shing Computer Components Co., (H.K .)L td. Homepage: http: / / www.wingshing.com Vdc nAdc 50 µAdc 50 IEBO nAdc — 50 Tel: (8 52) 2341 9 27 6 Fax : (8 52) 27 9 7 8 153 E-mail: wsccltd@ hk star.com Motorola Small–Signal Transistors, FETs and Diodes Device Data 1 WMBT5551LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 80 — — 80 250 80 — — — 0.15 — — 0.20 — 1.0 — — 1.0 Unit ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE — (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 5.0 Vdc) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) (IC = 50 mAdc, IB = 5.0 mAdc) Base – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Vdc VBE(sat) Vdc