STU11NC60 N-CHANNEL 600V - 0.48Ω - 11A Max220 PowerMesh II MOSFET ■ ■ ■ ■ ■ TYPE VDSS RDS(on) ID STU11NC60 600V < 0.55Ω 11 A TYPICAL RDS(on) = 0.48Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED DESCRIPTION The PowerMESH II is the evolution of the first generation of MESH OVERLAY. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. 1 2 3 Max220 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLIES (UPS) ■ DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Value Unit Drain-source Voltage (VGS = 0) 600 V Drain-gate Voltage (RGS = 20 kΩ) 600 V Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 11 A ID Drain Current (continuos) at TC = 100°C 8 A VDS VDGR VGS IDM (●) PTOT dv/dt(1) Tstg Tj Parameter Drain Current (pulsed) 44 A Total Dissipation at TC = 25°C 160 W Derating Factor 1.28 W/°C Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (•)Pulse width limited by safe operating area June 2000 4.5 V/ns –65 to 150 °C 150 °C (1)ISD ≤11A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX. 1/8 STU11NC60 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.78 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Thermal Resistance Case-sink Typ 0.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Rthc-sink Tl AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 12 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 400 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (V GS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 50 µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ±30V ±100 nA V(BR)DSS 600 V ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA R DS(on) Static Drain-source On Resistance VGS = 10V, ID = 6A ID(on) On State Drain Current VDS > ID(on) x RDS(on)max, VGS = 10V Min. Typ. Max. Unit 2 3 4 V 0.48 0.55 Ω 11 A DYNAMIC Symbol 2/8 Parameter gfs Forward Transconductance C iss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID =6A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. Max. Unit 13 S 2150 pF 275 pF 39 pF STU11NC60 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Parameter Turn-on Delay Time Rise Time Test Conditions Min. VDD = 300V, I D = 6 A RG = 4.7Ω, VGS = 10V (see test circuit, Figure 3) Total Gate Charge Qgs Gate-Source Charge Q gd Gate-Drain Charge Typ. Unit 20 ns 15 ns 65 VDD = 480V, I D = 12 A, VGS = 10V, R G = 4.7Ω Max. 90 nC 13 nC 28 nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 480V, I D = 12 A, R G = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. Unit 14 ns 25 ns 30 ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Source-drain Current ISDM (2) Source-drain Current (pulsed) VSD (1) Forward On Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current ISD = 12 A, VGS = 0 ISD = 12 A, di/dt = 100A/µs, VDD = 100V, T j = 150°C (see test circuit, Figure 5) Max. Unit 11 A 44 A 1.6 V 590 ns 5.6 µC 19 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STU11NC60 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations STU11NC60 Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STU11NC60 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STU11NC60 Max220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.3 4.6 0.169 0.181 A1 2.2 2.4 0.087 0.094 A2 2.9 3.1 0.114 0.122 b 0.7 0.93 0.027 0.036 b1 1.25 1.4 0.049 0.055 b2 1.2 1.38 0.047 0.054 c 0.45 0.6 0.18 0.023 D 15.9 16.3 D1 9 9.35 0.354 0.626 0.368 0.641 D2 0.8 1.2 0.031 0.047 D3 2.8 3.2 0.110 0.126 e 2.44 2.64 0.096 0.104 E 10.05 10.35 0.396 0.407 L 13.2 13.6 0.520 0.535 L1 3 3.4 0.118 0.133 D1 D2 A1 A2 A C D3 b b2 b1 D e E L1 L P011R 7/8 STU11NC60 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 8/8