1T417 Variable Capacitance Diode Description The 1T417 is a variable capacitance diode designed for electronic tuning of BS/CS tuners using a super-small-miniature flat package (SSVC). Features • Super-small-miniature flat package • Low series resistance: 1.5 Ω Max. (f=470 MHz) • Large capacitance ratio: 15.5 Typ. (C1/C25) • Small leakage current: 10 nA Max. (VR=25 V) • Capacitance deviation in a matching group: within 6 % Applications Electronic tuning of BS/CS tuners M-290 Absolute Maximum Ratings (Ta=25 °C) • Reverse voltage VR 30 V • Peak reverse voltage VRM 35 V (RL ≥ 10 kΩ) • Operating temperature Topr –20 to +75 °C • Storage temperature Tstg –65 to +150 °C Structure Silicon epitaxial planar type diode Electrical Characteristics Item Reverse current Reverse voltage Diode capacitance Capacitance ratio Series resistance Capacitance deviation in a matching group (Ta=25 °C) Symbol IR VR C1 C25 C1/C25 rs ∆C Conditions VR=25 V IR=1 µA VR=1 V, f=1 MHz VR=25 V, f=1 MHz VR=5 V, f=470 MHz VR=1 to 25 V, f=1 MHz Min. 30 7.8 0.5 13.0 Typ. Max. 10 8.6 9.4 0.6 Unit nA V pF pF 1.50 Ω 6.0 % 15.5 1.30 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. —1— E98905-TE 1T417 Example of Representative Characteristics Diode capacitance vs. Reverse voltage Reverse current vs. Ambient temperature 10 1000 Ta=25°C VR=25V IR-Reverse current (pA) C-Diode capacitance (pF) 5 2 1 0.5 100 0.2 0.1 1 2 5 10 20 10 –20 50 40 60 Forward voltage vs. Ambient temperature Reverse voltage vs. Ambient temperature 80 45 IF=1mA VR-Reverse voltage (V) VF-Forward voltage (V) 20 Ta-Ambient temperature (°C) 0.90 0.80 0.70 0.60 –20 0 VR-Reverse voltage (V) 0 20 40 60 IR=10µA 40 35 30 –20 80 Ta-Ambient temperature (°C) 0 20 40 60 Ta-Ambient temperature (°C) —2— 80 1T417 Diode capacitance vs. Ambient temperature Reverse current vs. Reverse voltage 1.03 100 1.02 VR=2V VR=7V 1.01 VR=25V VR=15V IR-Reverse current (pA) C (Ta)/C (25°C)-Diode capacitance VR=1V 1.00 0.99 0.98 –20 0 20 40 60 10 Ta=80°C Ta=60°C 1 80 Ta-Ambient temperature (°C) Ta=25°C 0.1 1 Temperature coefficient of diode capacitance Temperature coefficient (ppm/°C) 500 200 100 50 30 2 5 10 20 10 30 VR-Reverse voltage (V) 1000 1 3 50 VR-Reverse voltage (V) —3— 1T417 Package Outline Unit : mm 0.2 M A M-290 0.2 ± 0.05 10° MAX 1.7 ± 0.1 1.3 ± 0.1 A 0.8 ± 0.1 c b 10° MAX 0.7 ± 0.1 BASE METAL WITH PLATING c 0.11 ± 0.005 + 0.05 0.11 – 0.01 b 0.3 ± 0.025 0.05 0.3 –+ 0.02 PACKAGE MATERIAL EPOXY RESIN LEAD TREATMENT SOLDER PLATING EIAJ CODE LEAD MATERIAL COPPER JEDEC CODE PACKAGE WEIGHT 0.002g SONY CODE M-290 Mark 1 X7 2 —4— 1 : Cathode 2 : Anode