SONY 1T405

1T405
Variable Capacitance Diode
For the availability of this product, please contact the sales office.
Description
The 1T405 is a variable capacitance diode
designed for electronic tuning of wide-band CATV
tuners using a super-small-miniature flat package
(SSVC).
Features
• Super-small-miniature flat package
• Low series resistance: 0.85 Ω Max. (f=470 MHz)
• Large capacitance ratio: 12.5 Typ.
(C2/C25)
• Small leakage current: 10 nA Max. (VR=28 V)
• Capacitance deviation in a matching group:
within 2%
M-290
Absolute Maximum Ratings (Ta=25 °C)
• Reverse voltage
VR
34
• Operating temperature Topr
–20 to +75
• Storage temperature
Tstg –65 to +150
V
°C
°C
Applications
Electronic tuning of UHF and wide-band CATV
tuners
Structure
Silicon epitaxial planar type diode
Electrical Characteristics
Item
Reverse current
Reverse voltage
Diode capacitance
Capacitance ratio
Series resistance
Capacitance
deviation in a
matching group
(Ta=25 °C)
Symbol
Conditions
IR
VR
C2
C25
C2/C25
rs
VR=28 V
IR=1 µA
VR=2 V, f=1 MHz
VR=25 V, f=1 MHz
∆C
Min.
Max.
Unit
10
38.96
2.96
nA
V
pF
pF
CD=14 pF, f=470 MHz
0.85
Ω
VR=2 to 25 V, f=1 MHz
2
%
34
32.96
2.53
12.0
Typ.
12.5
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
—1—
E95918-TE
1T405
Reverse current vs. Ambient temperature
Diode capacitance vs. Reverse voltage
100
VR=28V
Ta=25°C
50
20
IR-Reverse current (pA)
C-Diode capacitance (pF)
100
10
5
10
2
1
1
2
5
10
20
VR-Reverse voltage (V)
50
1
–20
Forward voltage vs. Ambient temperature
45
VR-Reverse voltage (V)
IF=1mA
VF-Forward voltage (V)
80
Reverse voltage vs. Ambient temperature
0.80
0.70
0.60
0.50
–20
0
20
40
60
Ta-Ambient temperature (°C)
0
20
40
60
Ta-Ambient temperature (°C)
IR=10µA
40
35
30
–20
80
—2—
0
20
40
60
Ta-Ambient temperature (°C)
80
1T405
Diode capacitance vs. Ambient temperature
1.03
C (Ta)/C (25°C)-Diode capacitance
VR=1V
VR=2V
1.02
VR=7V
1.01
VR=25V
VR=15V
1.00
0.99
0.98
–20
0
20
40
60
Ta-Ambient temperature (°C)
80
Reverse current vs. Reverse voltage
Temperature coefficient of diode capacitance
100
1000
IR-Reverse current (pA)
Ta=60°C
10
Ta=25°C
Temperature coefficient (ppm/°C)
Ta=80°C
500
200
100
50
1
1
0.1
1
3
10
30
VR-Reverse voltage (V)
—3—
2
5
10
VR-Reverse voltage (V)
20
50
1T405
Package Outline
Unit : mm
0.2 M
A
M-290
0.2 ± 0.05
10° MAX
1.7 ± 0.1
1.3 ± 0.1
A
0.8 ± 0.1
c
b
10° MAX
0.7 ± 0.1
BASE METAL WITH PLATING
c
0.11 ± 0.005
+ 0.05
0.11 –
0.01
b
0.3 ± 0.025
0.05
0.3 –+ 0.02
PACKAGE MATERIAL
EPOXY RESIN
LEAD TREATMENT
SOLDER PLATING
EIAJ CODE
LEAD MATERIAL
COPPER
JEDEC CODE
PACKAGE WEIGHT
0.002g
SONY CODE
M-290
Mark
1
1 : Cathode
S5
2
—4—
2 : Anode