PHILIPS BGY282

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D727
BGY282
dual band UHF amplifier module
for GSM900 and GSM1800
Preliminary specification
2001 Dec 04
Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for GSM900 and GSM1800
BGY282
PINNING - SOT632A
FEATURES
• Dual band GSM amplifier
PIN
DESCRIPTION
• 3.5 V nominal supply voltage
1
RF input 1 (GSM900)
• 33 dBm output power for GSM1800
2
VAPC
• 35 dBm output power for GSM900
3, 6, 9, 12
Ground
• Easy output power control by DC voltage
4
VS1 (GSM900)
• Internal input and output matching
5
RF output 1 (GSM900)
• Easy band selection by DC voltage
7
RF output 2 (GSM1800)
• Suited for GPRS class 12 (duty cycle 4 : 8).
APPLICATIONS
8
VS2 (GSM1800)
10
Vband
11
RF input 2 (GSM1800)
• Digital cellular radio systems with Time Division Multiple
Access (TDMA) operation (GSM systems) in two
frequency bands: 880 to 915 MHz and
1710 to 1785 MHz.
1
2
3
4
5
12
6
DESCRIPTION
The BGY282 is a power amplifier module in a SOT632A
surface mounted ceramic package with a plastic cap.
The module consists of two separated line-ups, one for
GSM900 and one for GSM1800 with internal power
control, input and output matching.
11
10
9
8
7
Bottom view
MBL253
Fig.1 Simplified outline
QUICK REFERENCE DATA
RF performance at Tmb = 25 °C.
MODE OF
OPERATION
Pulsed; δ = 1 : 8
2001 Dec 04
VS
(V)
VAPC
(V)
PL
(dBm)
η
(%)
ZS , ZL
(Ω)
880 to 915
3.5
≤2.2
typ. 35
50
50
1710 to 1785
3.5
≤2.2
typ. 33
45
50
f
(MHz)
2
Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for GSM900 and GSM1800
BGY282
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VAPC = 0; RFIN = off
−
7
V
VAPC > 0.5 V; RFIN = on
−
5.5
V
DC control voltage
−
3
V
input drive power
−
10
dBm
PL1
load power 1 (GSM900)
−
36
dBm
−
35
dBm
−
35
dBm
VS1, VS2
DC supply voltage
VAPC
PD1, PD2
δ = 4 : 8; VSWRout > 2 : 1
PL1
load power 1 (GSM900)
PL2
load power 2 (GSM1800)
PL2
load power 2 (GSM1800)
δ = 4 : 8; VSWRout > 2 : 1
−
34
dBm
PS1
total power from supply during pulse (GSM900)
δ=4:8
−
7.5
W
PS2
total power from supply during pulse (GSM1800)
δ=4:8
−
4.5
W
Tstg
storage temperature
−40
+100
°C
Tmb
operating mounting base temperature
−30
+90
°C
Note: PL is forward power, measured in a coupler.
2001 Dec 04
3
Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for GSM900 and GSM1800
BGY282
CHARACTERISTICS
ZS = ZL = 50 Ω; PD1,2 = 0 dBm; VS1 = VS2 = 3.5 V; VAPC ≤ 2.2 V; T mb = 25 °C; tp = 575 µs; δ = 1 : 8;
f = 880 to 915 MHz (GSM900); f = 1710 to 1785 MHz (GSM1800); measured on demoboard of fig 7; unless otherwise
specified.
SYMBOL
Vband
PARAMETER
band switch voltage
Iband
band switch current
IL
leakage current
CONDITIONS
MIN.
TYP.
MAX.
UNIT
GSM1800 selected
0
−
0.7
V
GSM900 selected
1.7
−
5.5
V
−
−
30
µA
−
−
10
µA
ICM1, ICM2 peak control current
−
−
2
mA
PD1
input drive power (GSM900)
−3
−
4
dBm
PD2
input drive power (GSM1800)
VAPC = 0.2 V; PD1,2 = 0 mW
−3
2
5
dBm
VAPC = 2.2 V
34.7
35
−
dBm
VAPC = 2.2 V; VS1 = 3.1 V
34.2
34.5
−
dBm
PL1
load power GSM900
PL2
load power GSM1800
η1
efficiency GSM900
η2
efficiency GSM1800
VAPC = 2 V
38
harmonics GSM900
PL1 = 34.7 dBm
−
harmonics GSM1800
PL2 = 32.3 dBm
−
−
VS1,2 = 3.1 to 4.4 V; PD1,2 = 0 dBm;
PL1 = 5 to 34.7 dBm;
PL2 = 0 to 32.3 dBm
−
3:1
input VSWR of active device
VS1,2 = 3.1 to 5.15 V; VAPC ≤ 0.5 V
−
8:1
H2, H3
VSWRin
input VSWR of inactive
device
stability
isolation
VAPC = 2.2 V
32.3
33
−
dBm
VAPC = 2.2 V; VS1 = 3.1 V
31.7
32.3
−
dBm
VAPC = 2 V
43
50
−
%
45
−
%
−
−38
dBc
−35
dBc
−
VS1,2 = 3 to 5 V; PD1 = 0 to 3 dBm;
PD2 = 0 to 5 dBm; PL1 = <35 dBm;
PL2 = <33 dBm; VSWR = 6 : 1 through
all phases
−
−60
dBc
VS1,2 = 3.1 to 4.2 V; PD1 = 0 to 3 dBm; −
PD2 = 0 to 5 dBm; PL1 = <34 dBm;
PL2 = <32 dBm; VSWR = 6 : 1 through
all phases; δ = 4 : 8
−
−60
dBc
−
−
−36
dBm
−
−
−20
dBm
VAPC = 0.5 V; PD1 = 3 dBm;
PD2 = 5 dBm
second harmonic isolation
PL1 = 34.7 dBm
from GSM900 into GSM1800
maximum control slope
−5 dBm < PL1,2 < PL max
120
−
200
dB/V
tr
carrier rise time
PL1 = 5 to 34 dBm; PL2 = 0 to 32 dBm;
time to settle within −0.5 dB of final PL
−
1.5
2
µs
tf
carrier fall time
PL1 = 5 to 34 dBm; PL2 = 0 to 32 dBm;
time to settle within −0.5 dB of final PL
−
1.5
2
µs
2001 Dec 04
4
Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for GSM900 and GSM1800
SYMBOL
PARAMETER
CONDITIONS
MIN.
BGY282
TYP.
MAX.
UNIT
PL1 ≤ 34 dBm; bandwidth = 100 kHz;
f = 925 MHz
−
−
−71
dBm
PL1 ≤ 34 dBm; bandwidth = 100 kHz;
f = 935 MHz
−
−
−80
dBm
noise power GSM1800
PL2 ≤ 32 dBm; bandwidth = 100 kHz;
f = 1805 MHz
−
−
−76
dBm
AM/PM conversion
PD1,2 = −0.5 to 0.5 dBm;
PL1 = 5 to 34 dBm; PL2 = 0 to 32 dBm;
PL1,2 = constant during measurement
−
−
6
deg/dB
AM/AM conversion
PD1,2 = 4 %; f = 100 kHz;
PL1 = 5 to 34.7 dBm;
PL2 = 0 to 32.3 dBm
−
−
30
%
CG
conversion gain GSM900
PD1 = 0 dBm @ 915 MHz;
PL1 = 34 dBm;
Pi1 = −50 dBm @ 905 MHz;
CG = P925 − Pi1
−
25
−
dB
CG
conversion gain GSM1800
PD2 = 0 dBm @ 1785 MHz;
PL2 = 32 dBm;
Pi2 = −50 dBm @ 1765 MHz;
CG = P1805 − Pi2
−
25
−
dB
3 dB control bandwidth
GSM900, GSM1800
PL1 = 5 to 34 dBm; PL2 = 0 to 32 dBm
0.5
−
−
MHz
power drop 4 slot burst
GSM900, GSM1800
VAPC = 2.2 V; difference PL with
δ = 1 : 8 and δ = 4 : 8
−
−
0.4
dB
noise power GSM900
Pn
ruggedness
2001 Dec 04
VS1,2 = 5 V; PD1 = 0 to 3 dBm;
PD2 = 0 to 5 dBm; PL1 = <35 dBm;
PL2 = <33 dBm; VSWR ≤6 : 1 through
all phases
no degradation
VS1,2 = 4.2 V; PD1 = 0 to 3 dBm;
PD2 = 0 to 5 dBm; PL1 = <35 dBm;
PL2 = <33 dBm; VSWR ≤10 : 1
through all phases
no degradation
VS1,2 = 4.2 V; PD1 = 0 to 3 dBm;
PD2 = 0 to 5 dBm PL1 = <34 dBm;
PL2 = <32 dBm; VSWR ≤6 : 1 through
all phases; δ = 4 : 8
no degradation
5
Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for GSM900 and GSM1800
40
PL
(dBm) 30
(1)
BGY282
50
(2)
η
(%)
(3) (4)
1785 MHz
40
1710 MHz
20
(3)
10
915 MHz
30
(4)
880 MHz
0
20
(1)
-10
(2)
10
-20
-30
0
1
1.5
2
(1) = 880 MHz
(3) = 1710 MHz
(2) = 915 MHz
(4) = 1785 MHz
2.5
VC (V)
20
25
30
35
40
PL (dBm)
Z S = Z L = 50 Ω; VS = 3.5 V; P D = 0 dBm;
T mb = 25 °C; δ = 1 : 8; tp = 575 µs.
ZS = Z L = 50 Ω; VS = 3.5 V; P D = 0 dBm;
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.
Fig.2
Fig.3
Load power as a function of control voltage;
typical values.
Efficiency as a function of load power;
typical values.
-20
H3
(dBc)
-30
-20
H2
(dBc)
1710 MHz 1785 MHz
-40
-40
880 MHz
915 MHz
-50
880 MHz
915 MHz
-60
-60
1710 MHz
1785 MHz
-70
-80
-80
20
25
30
35
20
40
PL (dBm)
25
30
ZS = Z L = 50 Ω; VS = 3.5 V; P D = 0 dBm;
Z S = Z L = 50 Ω; VS = 3.5 V; P D = 0 dBm;
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.
T mb = 25 °C; δ = 1 : 8; tp = 575 µs.
Fig.4
Fig.5
Second harmonic as a function of load
power; typical values.
2001 Dec 04
6
35
40
PL (dBm)
Third harmonic as a function of load power;
typical values.
Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for
GSM900 and GSM1800
BGY282
APPLICATION INFORMATION
PAM1
6
GND
DCS out
8
+VS
C2
RF output 1
7 RF output 2
Z0
VS2
VS1
5
Z0
4
+VS
C4
C3
9
GND
GND
Vband
Vapc
3
C8
C7
10
VB
DCS in
Z0
C1
2
1
11
RF output 2
RF output 1
VC
Z0
RF in
GND
12
Fig.6 Test circuit.
List of components
QUANTITY
LOCATION
VALUE / TYPE
1
1
DESCRIPTION
REMARK
PCB
PAM1
BGY282
4
SUPPLIER
Roland
Haefele
Power amplifier module
Jack assembly end launch Type no. 142-0701-881
SMA connector
Johnson
Components
1
C1
100 µF / 35 V
Electrol. capacitor
Type no. ECEV1VA101P
Matsushita
1
C2
100 µF / 35 V
Electrol. capacitor
Type no. ECEV1VA101P
Matsushita
1
C3
100 nF
0805 size SMD capacitor
1
C4
100 nF
0805 size SMD capacitor
1
C7
680 pF
0603 size SMD capacitor
1
C8
100 pF
0603 size SMD capacitor
1
R1
100 Ohms / 0.1
W
0805 size SMD resistor
4
Z0
50 Ω
stripline; note 1
width 1.4 mm
Note
1. The striplines are on a double etched printed circuit board (εr = 4.6); thickness 0.8 mm
2001 Dec 04
7
Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for
GSM900 and GSM1800
BGY282
TOP VIEW
Fig.7 PCB test circuit.
SOLDERING
The indicated temperatures are those at the solder
interfaces.
MGM159
300
handbook, halfpage
T
(°C)
Advised solder types are types with a liquidus less or
equal to 210 °C.
200
Soldering can be carried out using a conveyor oven, a hot
air oven, an infrared oven or a combination of these
ovens. A double reflow process can be used.
Hand soldering is not recommended because of the
nature of the contacts.
100
The maximum allowed temperature is 250 °C for a
maximum of 5 seconds.
The maximum ramp-up is 10 °C per second.
0
0
The maximum cool-down is 5 °C per second.
1
2
3
4
t (min)
5
Fig.8 Recommended reflow temperature profile.
2001 Dec 04
8
Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for GSM900 and GSM1800
Fig.9 Soldering footprint for SOT632A.
2001 Dec 04
9
BGY282
Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for GSM900 and GSM1800
BGY282
PACKAGE OUTLINE
Leadless surface mounted package; plastic cap; 12 terminations
ZD (2×)
SOT632A
e1
(4×)
e
(4×)
1
Z5 (4×)
Z (2×)
2
3
4
5
e2
(2×)
12
6
Z2
(6×)
Z7
(4×)
Z4
(8×)
L
(12×)
11
b (8×)
10
9
b1 (4×)
8
7
Z8
Dimensions of terminations
Z1
(4×)
Z3
(2×)
Z9
Z6 (4×)
Dimensions of solderresist
D
D1
A
c
E1
E
pin 1 index
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
mm
1.8
1.4
1.5
1.4
OUTLINE
VERSION
b1
c
D
D1
E
3.75 0.61 14.05 13.35 8.3
3.65 0.49 13.45 13.05 7.7
E1
e
7.85
7.55
e1
e2
L
2.1 3.275 4.0
JEDEC
EIAJ
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
10
Z9
0.7 0.625 1.55 0.75 0.85
0.6 0.525 1.45 0.65 0.75
EUROPEAN
PROJECTION
ISSUE DATE
01-09-26
01-11-20
SOT632A
2001 Dec 04
ZD
1.45 3.75 1.55 2.45 1.55 1.35 0.75
1.35 3.65 1.45 2.35 1.45 1.25 0.65
REFERENCES
IEC
Z
Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for GSM900 and GSM1800
BGY282
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Dec 04
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
© Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
budgetnum/printrun/ed/pp12
Date of release: 2001
Dec 04
Document order number:
9397 750 09163