FKN2L60 FKN2L60 Application Explanation • • • • Switching mode power supply, light dimmer, electric flasher unit, hair drier TV sets, stereo, refrigerator, washing machine Electric blanket, solenoid driver, small motor control Photo copier, electric tool 3 1: T1 2: Gate 3: T2 2 TO-92 1 1 2 3 Bi-Directional Triode Thyristor Planar Silicon Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VDRM Parameter Repetitive Peak Off-State Voltage (Note1 ) Rating 600 Units V Symbol IT (RMS) Parameter RMS On-State Current Conditions Commercial frequency, sine full wave 360° conduction, Tc=65℃ ITSM Surge On-State Current Sinewave 1 full cycle, peak value, non-repetitive Rating 1.5 Units A 50Hz 9 A 60Hz 10 A I2t I2t for Fusing Value corresponding to 1 cycle of halfwave, surge on-state current, tp=10ms 0.4 A2s IG = 2x IGT, tr ≤ 100ns 50 A/µs di/dt Critical Rate of Rise of On-State Current PGM Peak Gate Power Dissipation PG (AV) Average Gate Power Dissipation VGM IGM TJ TSTG 1 W 0.1 W Peak Gate Voltage 6 V Peak Gate Current 0.5 A Junction Temperature - 40 ~ 125 °C Storage Temperature - 40 ~ 125 °C Thermal Characteristic Symbol Rth(J-C) Parameter Thermal Resistance ©2004 Fairchild Semiconductor Corporation Test Condition Junction to case (Note 4) Min. - Typ. - Max. 40 Units °C/W Rev. A, April 2004 Symbol IDRM Parameter Repetieive Peak Off-State Current VTM On-State Voltage VGT Gate Trigger Voltage (Note 2) Test Condition VDRM applied Typ. - Max. 20 Units µA - - 1.6 V V TC=25°C, ITM=3A Instantaneous measurement I II VD=12V, RL=20Ω III I Gate Trigger Current (Note 2) IGT Min. - II VD=12V, RL=20Ω III T2(+), Gate (+) - - 1.5 T2(+), Gate (-) - - 1.5 V T2(-), Gate (-) - - 1.5 V T2(+), Gate (+) - - 5 mA T2(+), Gate (-) - - 5 mA T2(-), Gate (-) - - 5 mA VGD Gate Non-Trigger Voltage TJ=125°C, VD=1/2VDRM 0.2 - - V IH Holding Current VD = 12V, ITM = 1A - - 10 mA IL Latching Current VD = 12V, IG = 1.2IGT - - 10 mA - - 10 mA 500 - - V/µs 5 - - V/µs I, III II dv/dt Critical Rate of Rise of Off-State Voltag VDRM = Rated, Tj = 125°C, Exponential Rise (dv/dt)C Critical-Rate of Rise of Off-State Commutating Voltage (Note 3) Notes: 1. Gate Open 2. Measurement using the gate trigger characteristics measurement circuit 3. The critical-rate of rise of the off-state commutating voltage is shown in the table below 4. Case temperature is measured at the T2 terminal 1.5mm away from the molded case. VDRM (V) FKN2L60 Commutating voltage and current waveforms (inductive load) Test Condition 1. Junction Temperature TJ=125°C 2. Rate of decay of on-state commutating current (di/dt)C = - 0.5A/ms 3. Peak off-state voltage VD = 400V Supply Voltage Time (di/dt)C Main Current Time Time Main Voltage (dv/dt)C VD Quadrant Definitions for a Triac T2 Positive + (+) T2 Quadrant II (-) IGT GATE (+) T2 Quadrant I (+) IGT GATE T1 T1 IGT - + IGT (-) T2 Quadrant III (-) IGT GATE (-) T2 (+) IGT GATE T1 Quadrant IV T1 T2 Negative ©2004 Fairchild Semiconductor Corporation Rev. A, April 2004 FKN2L60 Electrical Characteristics TC=25°C unless otherwise noted FKN2L60 Typical Curves 12 12 SURGE ON-STATE CURRENT [A] 11 ON-STATE CURRENT [A] 10 o 25 C 8 o 125 C 6 4 2 10 60Hz 9 8 7 50Hz 6 5 4 3 2 1 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 1 10 ON-STATE VOLTAGE [V] Figure 1. Maximum On-state Characteristics GATE VOLTAGE [V] VGM=10V PGM=3W 10 VGT=1.5V PG(AV)=0.3W IGT=10mA IGM=1.6A VGD=0.2V 0.1 1 10 100 Figure 2. Rated Surge On-state Current NORMALIZED GATE TRIGGER CURRENT [%] 100 1 1000 IⅡ, IⅢ IⅠ 100 1000 10 -60 -40 -20 GATE CURRENT [mA] 20 40 60 80 100 120 140 o Figure 4. Gate Trigger Current vs Tj 1000 1000 100 VGTⅠ -40 -20 0 20 40 60 80 100 120 o JUNCTION TEMPERATURE [ C] Figure 5. Gate Trigger Voltage vs Tj ©2004 Fairchild Semiconductor Corporation 140 10 o VGTⅡ, VGTⅢ 100 [ C/W] TRANSIENT THERMAL IMPEDANCE NORMALIZED GATE TRIGGER VOLTAGE [%] 0 JUNCTION TEMPERATURE [ C] Figure 3. Gate Characteristics 10 -60 100 NUMBER OF CYCLES AT 50Hz AND 60Hz 1 0.1 0.01 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000 CONDUCTION TIME [sec] Figure 6. Transient Thermal Impedance Rev. A, April 2004 FKN2L60 Typical Curves (Continues) 4.0 ON-STATE POWER DISSIPATION [W] MAXIMUM ALLOWABLE CASE, AMBIENT o TEMPERATURE TCMAX, TaMAX [ C/W] 140 120 TC 100 80 Ta 60 40 20 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 2.0 0.2 0.4 0.6 0.8 ON-STATE CURRENT [A] TYPICAL EXAMPLE 4 10 3 10 -40 -20 0 20 40 60 80 100 120 10 -60 140 -40 -20 1.8 2.0 2.2 2.4 2.6 2.8 3.0 0 20 40 60 80 100 120 140 o JUNCTION TEMPERATURE [ C] o JUNCTION TEMPERATURE [ C] Figure 9. Repetitive Peak Off-state Current vs Junction Temperature Figure 10. Holding Current vs Junction Temperature 160 1000 TYPICAL EXAMPLE 140 120 100 80 60 40 20 -40 -20 0 20 40 60 80 100 120 140 NORMALIZED GATE TRIGGER CURRENT [%] NORMALIZED BREAKOVER VOLTAGE [%] 1.6 100 2 0 -60 1.4 1000 5 10 -60 1.2 Figure 8. Maximum On-state Power Dissipation NORMALIZED HOLDING CURRENT [%] NORMALIZED REPETIVITE OFF-STATE CURRENT [%] Figure 7. Allowable Case, Ambient Temperature vs Rms On-state Current 10 1.0 RMS ON-STATE CURRENT [A] IⅡ IⅢ 100 IⅠ 10 1 o JUNCTION TEMPERATURE [ C] Figure 11. Breakover Voltage vs Junction Temperature ©2004 Fairchild Semiconductor Corporation 10 100 GATE CURRENT PULSE WIDTH [µs] Figure 12. Gate Trigger Current vs Gate Current Pulse Width Rev. A, April 2004 FKN2L60 Typical Curves (Continues) NORMALIZED BREAKOVER VOLTAGE [%] 160 TYPICAL EXAMPLE Tj=125℃ 140 120 100 Ⅰ QUADRANT 80 60 Ⅲ QUADRANT 40 20 1 10 2 10 3 10 4 10 RATE OF RISE OF-STATE VOLTAGE [V/us] Figure 13. Breakover Voltage vs Rate of Rise of Off-state Voltage ©2004 Fairchild Semiconductor Corporation Rev. A, April 2004 FKN2L60 Package Dimension TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. A, April 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ FRFET™ DOME™ GlobalOptoisolator™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ FACT™ i-Lo™ Across the board. Around the world.™ The Power Franchise Programmable Active Droop™ ImpliedDisconnect™ PACMAN™ POP™ ISOPLANAR™ Power247™ LittleFET™ MICROCOUPLER™ PowerSaver™ PowerTrench MicroFET™ QFET MicroPak™ QS™ MICROWIRE™ QT Optoelectronics™ MSX™ Quiet Series™ MSXPro™ RapidConfigure™ OCX™ RapidConnect™ OCXPro™ SILENT SWITCHER OPTOLOGIC SMART START™ OPTOPLANAR™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I10