PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FXT751 ISSUE 1 FEB 94 FEATURES * 60 Volt VCEO * 2 Amp continuous current * Ptot= 1 Watt APPLICATIONS * Lamp, relay or solenoid drivers * Audio circuits * Replacement of TO126 and TO220 parts REFER TO ZTX751 FOR GRAPHS B C E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage VCBO -80 Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -6 A Continuous Collector Current IC -2 A Power Dissipation at Tamb=25°C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -80 TYP. MAX. V IC=-100µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -60 V IC=-10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA, IC=0 Collector Cut-Off Current ICBO -0.1 -10 µA µA VCB=-60V, IE=0 VCB=-60V, Tamb=100°C Emitter Cut-Off Current IEBO -0.1 µA VEB=-4V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) -0.15 -0.28 -0.3 -0.5 V V IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* Base-Emitter Saturation Voltage VBE(sat) -0.90 -1.25 V IC=-1A, IB=-100mA* Base-Emitter Turn-On Voltage VBE(on) -0.8 -1.0 V IC=-1A, VCE=-2V* Static Forward Current Transfer Ratio hFE 70 100 80 40 200 200 170 150 Transition Frequency fT 100 140 Output Capacitance Cobo IC=-50mA, VCE=-2V* IC=-500mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* 300 30 MHz IC=-100mA, VCE=-5V f=100MHz pF VCB=-10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3-57