Order this document by MPS3640/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –12 Vdc Collector – Base Voltage VCBO –12 Vdc Emitter – Base Voltage VEBO –4.0 Vdc Collector Current — Continuous IC –80 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg – 55 to +150 °C Symbol Max Unit Operating and Storage Junction Temperature Range 2 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit V(BR)CES –12 — Vdc VCEO(sus) –12 — Vdc Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) V(BR)CBO –12 — Vdc Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) V(BR)EBO –4.0 — Vdc — — –0.01 –1.0 — –10 Characteristic OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –100 µAdc, VBE = 0) Collector – Emitter Sustaining Voltage(1) (IC = –10 mAdc, IB = 0) Collector Cutoff Current (VCE = –6.0 Vdc, VBE = 0) (VCE = –6.0 Vdc, VBE = 0, TA = 65°C) Base Current (VCE = –6.0 Vdc, VEB = 0) 1. Pulse Test: Pulse Width µAdc ICES IB nAdc v 300 ms, Duty Cycle v 2.0%. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 MPS3640 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 30 20 120 — — — — –0.2 –0.6 –0.25 –0.75 –0.75 — –0.95 –1.0 –1.5 fT 500 — MHz Output Capacitance (VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo — 3.5 pF Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo — 3.5 pF td — 10 ns Rise Time (VCC = –6.0 Vdc, IC = –50 mAdc, VBE(off) = –1.9 Vdc, IB1 = –5.0 mAdc) tr — 30 ns Storage Time (VCC = –6.0 Vdc, IC = –50 mAdc, IB1 = IB2 = –5.0 mAdc) ts — 20 ns tf — 12 ns — — 25 60 — — 35 75 ON CHARACTERISTICS(1) DC Current Gain (IC = –10 mAdc, VCE = –0.3 Vdc) (IC = –50 mAdc, VCE = –1.0 Vdc) hFE — Collector – Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) (IC = –10 mAdc, IB = –1.0 mAdc, TA = 65°C) VCE(sat) Base – Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc) (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) VBE(sat) Vdc Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Delay Time Fall Time Turn–On Time (VCC = –6.0 Vdc, IC = –50 mAdc, IB1 = –5.0 mAdc) (VCC = –1.5 Vdc, IC = –10 mAdc, IB1 = –0.5 mAdc) ton Turn–Off Time (VCC = –6.0 Vdc, IC = –50 mAdc, IB1 = IB2 = –5.0 mAdc) (VCC = –1.5 Vdc, IC = –10 mAdc, IB1 = IB2 = –0.5 mAdc) toff 1. Pulse Test: Pulse Width 1.0 k 0.1 µF 680 VBB = –6.0 V 110 Figure 1. VCC = 1.5 V 5.0 k Vout 5.0 V Vin –6.8 V TO SAMPLING SCOPE PULSE SOURCE 51 INPUT Z ≥ 100 k RISE TIME ≤ 1.0 ns RISE TIME ≤ 1.0 ns PULSE WIDTH ≥ 100 ns Zin = 50 OHMS NOTES: Collector Current = 50 mA, FALL TIME ≤ 1.0 ns NOTES: Turn–On and Turn–Off Time NOTES: Base Currents = 5.0 mA. 2 ns v 300 ms, Duty Cycle v 2.0%. VBB = +1.9 V VCC = –6.0 V 0 ns 0.1 µF 5.0 k 130 Vout Vin 0 TO SAMPLING SCOPE PULSE SOURCE 51 INPUT Z ≥ 100 k RISE TIME ≤ 1.0 ns RISE TIME ≤ 1.0 ns PULSE WIDTH ≥ 200 ns Zin = 50 OHMS NOTES: Collector Current = 10 mA, FALL TIME ≤ 1.0 ns NOTES: Turn–On and Turn–Off Time NOTES: Base Currents = 0.5 mA. Figure 2. Motorola Small–Signal Transistors, FETs and Diodes Device Data MPS3640 200 –1.4 –1.2 TJ = 125°C 100 25°C 70 50 V, VOLTAGE (VOLTS) hFE, DC CURRENT GAIN VCE = –1.0 V –55°C 30 TJ = 25°C VBE(sat) @ IC/IB = 10 –1.0 –0.8 VBE(on) @ VCE = –1.0 V –0.6 –0.4 20 VCE(sat) @ IC/IB = 10 –0.2 10 –0.1 –0.2 –5.0 –10 –20 –0.5 –1.0 –2.0 IC, COLLECTOR CURRENT (mA) –50 0 –0.1 –0.2 –100 +0.5 –1.0 TJ = 25°C –0.8 IC = –1.0 mA –5.0 mA –20 mA –80 mA –0.6 –0.4 –0.2 0 –0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0 IB, BASE CURRENT (mA) –2.0 –5.0 0 *APPLIES FOR IC/IB ≤ hFE/4 –100 –55°C to 25°C –0.5 –1.0 25°C to 125°C –1.5 –55°C to 25°C RθVB for VBE –2.0 –0.1 –0.2 –10 25°C to 125°C RθVC for VCE(sat) Figure 5. Collector Saturation Region –0.5 –1.0 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mA) –50 –100 Figure 6. Temperature Coefficients 5.0 2000 TJ = 25°C f = 100 MHz TJ = 25°C VCE = –10 V 3.0 C, CAPACITANCE (pF) f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) –50 Figure 4. “On” Voltages θV, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain –0.5 –1.0 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mA) 1000 –1.0 V 800 600 400 2.0 Cobo Cibo 1.0 0.7 200 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 0.5 –0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 7. Current–Gain — Bandwidth Product Figure 8. Capacitance Motorola Small–Signal Transistors, FETs and Diodes Device Data –20 3 MPS3640 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. 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