Fast Recovery Diodes (FRD) MA3G655 Silicon planar type (cathode common) Unit : mm • High reverse voltage VR • Low forward voltage VF • Fast reverse recovery time trr ■ Absolute Maximum Ratings Ta = 25°C 5.0 ± 0.2 3.2 21.0 ± 0.5 15.0 ± 0.2 ■ Features 15.0 ± 0.3 11.0 ± 0.2 φ 3.2 ± 0.1 16.2 ± 0.5 12.5 3.5 Solder Dip 0.7 For switching circuits 2.0 ± 0.2 2.0 ± 0.1 1.1 ± 0.1 0.6 ± 0.2 5.45 ± 0.3 Parameter Symbol Rating Unit Repetitive peak reverse voltage VRRM 300 V Non-repetitive peak reverse surge voltage VRSM 300 V Average forward current IF(AV) 20 A Non-repetitive peak forward surge current* IFSM 150 A Junction temperature Tj −40 to +150 °C Storage temperature Tstg −40 to +150 °C 10.9 ± 0.5 1 2 3 1 : Anode 2 : Cathode (Common) 3 : Anode TOP-3F(a) (TOP-3 Full Pack Package) Internal Connection Note) * : Half sine-wave; 10 ms/cycle 1 2 3 Min Typ Max ■ Electrical Characteristics Ta = 25°C Parameter Symbol Repetitive peak reverse current Conditions Unit IRRM1 VRRM = 300 V, TC = 25°C 20 µA IRRM2 VRRM = 300 V, Tj = 150°C 5 mA Forward voltage (DC) VF IF = 10 A, TC = 25°C 1 V Reverse recovery time* trr IF = 1 A, IR = 1 A 50 ns Direct current (between junction and case) 1.5 °C/W 40 °C/W Thermal resistance Rth(j-c) Rth(j-a) Note) 1. Rated input/output frequency: 10 MHz 2. * : trr measuring circuit 50 Ω 50 Ω trr IF D.U.T 5.5 Ω IR 0.1 × IR 1 MA3G655 Fast Recovery Diodes (FRD) IF V F 60 10 25°C Reverse current IR (nA) Ta = 150°C 100°C 1 0.1 105 Average forward power PD(AV) (W) Ta = 150°C 106 Forward current IF (A) PD(AV) IF(AV) IR V R 107 100 100°C 104 103 25°C 102 10 0.01 0 0.4 0.8 1.2 1.6 0 2.0 50 Reverse voltage VR (V) Forward voltage VF (V) IF(AV) TC Thermal resistance Rth (°C/W) Average forward current IF(AV) (A) t0 / t1 = 1/2 1/3 DC 1/6 16 12 8 4 t0 t1 0 30 50 100 Case temperature TC (°C) 2 t0 / t1 = 1/6 30 1/3 1/2 DC 20 10 0 4 8 12 16 20 150 Without heat sink 10 1 10−1 10−2 10−4 10−3 10−2 10−1 24 Average forward current IF(AV) (A) Rth(t) t 102 24 20 40 0 100 150 200 250 300 350 t0 t1 50 1 Time t (s) 10 102 103 104