Schottky Barrier Diodes (SBD) MA3X703 Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Unit VR 20 V Repetitive peak reverse voltage VRRM 20 V Average forward current IF(AV) 500 mA Non-repetitive peak forward surge current* IFSM 3 A Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 1.45 3 + 0.1 + 0.1 0.16 − 0.06 0.8 + 0.2 1.1 − 0.1 Rating 1 0.1 to 0.3 0.4 ± 0.2 0 to 0.1 Reverse voltage (DC) Symbol 0.65 ± 0.15 2 ■ Absolute Maximum Ratings Ta = 25°C Parameter 0.95 • Mini type 3-pin package •Allowing to rectify under (IF(AV) = 500 mA) condition • Low IR(reverse current) type. (About 1/10 of IR of the ordinary products) 1.5 0.95 + 0.2 2.9 − 0.05 ■ Features 1.9 ± 0.2 0.65 ± 0.15 + 0.25 − 0.05 0.4 − 0.05 For high-frequency rectification 1 : Anode 2 : NC JEDEC : TO-236 3 : Cathode EIAJ : SC-59 Mini Type Package (3-pin) Marking Symbol: M4R Internal Connection Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) 1 3 2 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit 10 µA 1 µA 0.55 V Reverse current (DC) IR1 VR = 10 V IR2 VR = 5 V Forward voltage (DC) VF1 IF = 500 mA 0.5 0.4 VF2 IF = 10 mA 0.3 Terminal capacitance Ct VR = 0 V, f = 1 MHz 60 pF V Reverse recovery time* trr IF = IR = 100 mA Irr = 0.1 · IR, RL = 100 Ω 5 ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 400 MHz 3. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1·IR IF = 100 mA IR = 100 mA RL = 100 Ω 1 MA3X703 Schottky Barrier Diodes (SBD) IF V F 104 0.8 0.7 Ta = 125°C 103 Forward voltage VF (V) 75°C 25°C − 20°C 10−2 10−3 10−4 Reverse current IR (µA) 10−1 Forward current IF (A) IR VR VF Ta 1 0.6 0.5 IF = 500 mA 0.4 0.3 50 mA 0.2 Ta = 125°C 102 75°C 10 1 25°C 5 mA 0.1 10−5 0 0.1 0.2 0.3 0.4 0.5 0 −40 0.6 Forward voltage VF (V) 10−1 0 40 80 120 160 200 0 IR T a 5 15 10 1 Forward surge current IF(surge) (A) Terminal capacitance Ct (pF) Reverse current IR (µA) 100 60 50 40 30 20 10 0.1 −40 0 0 40 80 120 160 Ambient temperature Ta (°C) 2 200 30 Ta = 25°C Ta = 25°C VR = 20 V 10 V 6V 3V 25 1 000 70 1 000 20 IF(surge) tW Ct VR 80 10 000 10 Reverse voltage VR (V) Ambient temperature Ta (°C) 0 5 10 15 20 25 Reverse voltage VR (V) 30 300 IF(surge) tW 100 30 Breakdown point (typ.) 10 3 1 0.3 0.1 0.1 0.3 1 3 10 30 Pulse width tW (ms) 100