FAIRCHILD FQP140N03L

FQP140N03L
April 2000
QFET
TM
FQP140N03L
30V LOGIC N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as DC/DC
converters, high efficiency switching for power
management in portable and battery operated products.
•
•
•
•
•
•
•
140A, 30V, RDS(on) = 0.0045Ω @VGS = 10 V
Low gate charge ( typical 73 nC)
Low Crss ( typical 580 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175°C maximum junction temperature rating
D
!
"
G
G!
DS
! "
"
"
TO-220
!
FQP Series
Absolute Maximum Ratings
Symbol
VDSS
S
TC = 25°C unless otherwise noted
Parameter
ID
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
IDM
Drain Current
- Continuous (TC = 100°C)
- Pulsed
FQP140N03L
(Note 6)
(Note 6)
(Note 1)
Units
30
V
140
A
99
A
490
A
VGSS
Gate-Source Voltage
±20
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
710
mJ
IAR
Avalanche Current
(Note 1)
140
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
18
7.0
180
1.2
-55 to +175
mJ
V/ns
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
Thermal Resistance, Junction-to-Case
Parameter
RθCS
Thermal Resistance, Case-to-Sink
RθJA
Thermal Resistance, Junction-to-Ambient
©2000 Fairchild Semiconductor International
Typ
Max
Units
--
0.84
°CW
0.5
--
°CW
--
62.5
°CW
Rev. A, April 2000
Symbol
C
= 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Unit
s
30
--
--
V
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to
25°C
VDS = 30 V, VGS = 0 V
--
0.03
--
--
1
µA
VDS = 24 V, TC = 150°C
--
--
10
µA
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
VGS = 20 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -20 V, VDS = 0 V
--
--
-100
nA
1.0
--
2.5
V
---
0.0038
0.005
0.0045
0.006
Ω
--
85
--
S
On Characteristics
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 70 A
VGS = 5 V, ID =70 A
gFS
Forward Transconductance
VDS = 15 V, ID = 70 A
VGS(th)
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
3400
4420
pF
--
2090
2720
pF
--
580
755
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 15 V, ID = 70 A,
RG = 25 Ω
(Note 4, 5)
VDS = 24 V, ID = 140 A,
VGS = 5 V
(Note 4, 5)
--
60
130
ns
--
770
1500
ns
--
25
60
ns
--
250
510
ns
--
73
95
nC
--
29.5
--
nC
--
38.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
140
A
ISM
--
--
490
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 140 A
Drain-Source Diode Forward Voltage
--
--
1.5
V
trr
Reverse Recovery Time
--
70
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 140 A,
dIF / dt = 100 A/µs
--
105
--
nC
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 36µH, IAS = 140A, VDD = 15V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 140A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
6. Continuous Drain Current Calculated by Maximum Junction Temperature : Limited by Package
©2000 Fairchild Semiconductor International
Rev. A, April 2000
FQP140N03L
Electrical CharacteristicsT
VGS
10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
2
2
10
ID, Drain Current [A]
ID, Drain Current [A]
Top :
10
1
10
175
10
Notes :
1. VDS = 15V
2. 250s Pulse Test
25
Notes :
1. 250s Pulse Test
2. TC = 25
1
-55
0
-1
0
10
10
1
10
0
10
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
10.0
2
VGS = 5V
10
IDR, Reverse Drain Current [A]
R DS(ON) [m ],
Drain-Source On-Resistance
12.5
7.5
VGS = 10V
5.0
1
10
2.5
Note : TJ = 25
Notes :
1. VGS = 0V
2. 250s Pulse Test
25
175
0.0
0
100
200
300
400
500
0
10
ID, Drain Current [A]
0.2
12000
0.4
0.6
0.8
Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
2000
V GS , Gate-Source Voltage [V]
Coss
4000
1.6
1.8
2.0
VDS = 15V
10
Ciss
1.4
12
10000
6000
1.2
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
8000
1.0
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Capacitance [pF]
FQP140N03L
Typical Characteristics
VDS = 24V
8
6
4
2
Note : ID = 140A
0
0
0
-1
10
0
10
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
25
50
75
100
125
150
1
10
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, April 2000
(Continued)
2.5
1.2
2.0
1.1
RDS(ON) , (Normalized)
Drain-Source On-Resistance
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
FQP140N03L
Typical Characteristics
1.5
1.0
1.0
Notes :
1. VGS = 0 V
2. ID = 250 A
0.9
0.8
-100
-50
0
50
100
Notes :
1. VGS = 10 V
2. ID = 70 A
0.5
150
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
150
10
Operation in This Area
is Limited by R DS(on)
3
Limited by Package
125
ID, Drain Current [A]
ID , Drain Current [A]
100 µ s
1 ms
10
2
10 ms
DC
10
1
Notes :
100
75
50
o
1. TC = 25 C
25
o
2. TJ = 175 C
3. Single Pulse
0
10
-1
10
10
0
0
25
1
10
50
VDS, Drain-Source Voltage [V]
Z
JC
(t), T h e rm a l R e s p o n s e
Figure 9. Maximum Safe Operating Area
10
75
100
125
150
175
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs. Case Temperature
0
D = 0 .5
0 .2
10
-1
N otes :
1 . Z J C ( t ) = 0 . 8 4 /W M a x .
2 . D u t y F a c t o r , D = t 1 /t 2
3 . T J M - T C = P D M * Z J C( t )
0 .1
0 .0 5
0 .0 2
PDM
0 .0 1
t1
s in g le p u ls e
10
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor International
Rev. A, April 2000
FQP140N03L
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50K
Qg
200nF
12V
5V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
VGS
RG
VGS
DUT
5V
10%
tr
td(on)
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
DUT
10V
tp
©2000 Fairchild Semiconductor International
ID (t)
VDS (t)
VDD
tp
Time
Rev. A, April 2000
FQP140N03L
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
©2000 Fairchild Semiconductor International
Rev. A, April 2000
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
10.08 ±0.30
(1.00)
)
(45°
13.08 ±0.20
FQP140N03L
Package Dimensions
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
©2000 Fairchild Semiconductor International
Rev. A, April 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
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which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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2. A critical component is any component of a life support
device or system whose failure to perform can be
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. A, January 2000