VP1008CSM4 P–CHANNEL ENHANCEMENT MODE MOSFET MECHANICAL DATA Dimensions in mm (inches) 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) FEATURES • BVDSS =100V 3 2 4 1 1.27 ± 0.05 (0.05 ± 0.002) 0.23 rad. (0.009) 0.64 ± 0.08 (0.025 ± 0.003) 3.81 ± 0.13 (0.15 ± 0.005) 0.25 ± 0.03 (0.01 ± 0.001) • ID = 300mA 0.23 min. (0.009) • Hermetic Surface Mount Package • Screening Option Available 2.03 ± 0.20 (0.08 ± 0.008) 1.02 ± 0.20 (0.04 ± 0.008) LCC3 PACKAGE Underside View PAD 1 - Drain PAD 2 - N/C The VP1008CSM4 is a general purpose P-Channel enhancement mode mosfet in a Ceramic Surface Mount package designed for high rel applications: PAD 3 - Source PAD 4 - Gate ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VDS Drain – Source Voltage VGS Gate – Source Voltage ID Continuous Drain Current IDM Pulsed Drain Current 1 PD Power Dissipation TSTG , TJ 100V "30V @TA = 25°C 300mA @TA = 100°C 195mA 3A @TA = 25°C 400W @TA = 100°C 160W Maximum Junction and Storage Temperature Range 150°C NOTE: 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 9/99 VP1008CSM4 ELECTRICAL RATINGS (TA = 25°C unless otherwise stated) Characteristic Test Conditions Min. Typ. Max. Unit BVDSS STATIC CHARACTERISTICS Drain – Source Breakdown Voltage VGS = 0V ID = -10mA -110 -100 VGS(TH) Gate Threshold Voltage VDS = VGS ID = -1mA -34 -2 VGS = "20V VGS = 0V "100 TJ = 125°C "500 IGSS Gate – Source Leakage Current IDSS Zero Gate Voltage Drain Current ID(ON) RDS(ON) VDS = -100V -45 nA VGS = 0V -10 TJ = 125°C -500 On State Drain Current 1 VDS = -15V VGS = -10V -2 Static Drain – Source VGS = 10V ID = -1A 25 5 TJ = 125°C 43 8 On-State Resistance 1 -11 Forward Transconductance 1 VDS = -10V ID = -0.5A 325 gos Common Source Output Conductance VDS = -7.5V ID = -0.1A 450 Ciss DYNAMIC CHARACTERISTICS Input capacitance VGS = 0V 38 60 Coss Output capacitance VDS = 25V 16 25 Crss Reverse transfer capacitance f = 1MHz 2 5 7 10 9 10 ton Turn–on Time VDD = 15V ID = 0.6A toff Turn-off Time RL = 23W RG = 25W mA A gfs SWITCHING CHARACTERISTICS V 200 W mS mS pF ns VGEN = 10V NOTES: 1) Pulse Test: Pulse Width = 300ms , Duty Cycle £ 2% THERMAL CHARACTERISTICS RqJA Characteristic Junction – Ambient Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Min. Typ. Max. Unit 312.5 °C/W Prelim. 9/99