IRF IRG4PH30K

PD -91580A
IRG4PH30K
Short Circuit Rated
UltraFast IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• High short circuit rating optimized for motor control,
tsc =10µs, VCC = 720V , TJ = 125°C,
VGE = 15V
• Combines low conduction losses with high
switching speed
• Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
VCES = 1200V
VCE(on) typ. = 3.10V
G
@VGE = 15V, IC = 10A
E
n-channel
Benefits
• As a Freewheeling Diode we recommend our
HEXFREDTM ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
• Latest generation 4 IGBT's offer highest power
density motor controls possible
• This part replaces the IRGPH30K and IRGPH30M
devices
TO-247AC
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
Units
1200
20
10
40
40
10
±20
121
100
42
-55 to +150
V
A
µs
V
mJ
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
Max.
–––
0.24
–––
6 (0.21)
1.2
–––
40
–––
Units
°C/W
g (oz)
1
2/7/2000
IRG4PH30K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Collector-to-Emitter Breakdown Voltage
1200 —
—
V
VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage T 18
—
—
V
VGE = 0V, IC = 1.0A
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage —
0.19 —
V/°C VGE = 0V, IC = 2.0mA
— 3.10 4.2
IC = 10A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
— 3.90 —
IC = 20A
See Fig.2, 5
V
— 3.01 —
IC = 10A , TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0
—
6.0
VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
—
-12
— mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance U
4.3
6.5
—
S
VCE = 100 V, IC = 10A
—
—
250
VGE = 0V, VCE = 1200V
ICES
Zero Gate Voltage Collector Current
µA
—
—
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
—
— 2000
VGE = 0V, VCE = 1200V, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
—
— ±100
nA
VGE = ±20V
V(BR)CES
V(BR)ECS
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
10
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
53
80
IC = 10A
9.0
14
nC
VCC = 400V
See Fig.8
21
32
VGE = 15V
28
—
23
—
TJ = 25°C
ns
200 300
IC =10A, VCC = 960V
110 170
VGE = 15V, RG = 23Ω
0.64 —
Energy losses include "tail"
0.92 —
mJ
See Fig. 9,10,14
1.56 2.4
—
—
µs
VCC = 720V, TJ = 125°C
VGE = 15V, RG = 23Ω
27
—
TJ = 150°C,
26
—
IC = 10A, VCC = 960V
ns
310 —
VGE = 15V, RG = 23Ω
330 —
Energy losses include "tail"
3.18 —
mJ
See Fig. 10,11,14
13
—
nH
Measured 5mm from package
800 —
VGE = 0V
60
—
pF
VCC = 30V
See Fig. 7
14
—
ƒ = 1.0MHz
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG =23Ω,
(See fig. 13a)
2
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
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IRG4PH30K
30
F o r bo t h :
25
Load Current ( A )
Tria n gu lar w ave :
D u ty c yc le : 50%
TJ = 1 2 5°C
Ts in k = 9 0 °C
G a te d rive as sp ec ified
Po wer D issipat io n = 24
4 0W
20
C la m p v o lta g e :
8 0 % o f rate d
S q u a re wa ve :
15
6 0 % o f ra te d
vo l t a g e
10
5
Id e a l d io de s
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
I C , Collector-to-Emitter Current (A)
10
TJ = 150 °C
TJ = 25 °C
V
= 15V
20µs PULSE WIDTH
GE
1
1
10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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I C , Collector-to-Emitter Current (A)
100
100
10
TJ = 150 ° C
TJ = 25 °C
V
= 50V
5µs PULSE WIDTH
CC
1
6
8
10
12
14
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4PH30K
5.0
20
V
= 15V
80 us PULSE WIDTH
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
GE
15
10
5
0
25
50
75
100
125
150
4.5
IC = 20 A
4.0
3.5
IC = 10 A
3.0
IC = 5 A
2.5
2.0
-60 -40 -20
TC , Case Temperature ( °C)
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
P DM
0.10
0.1
0.05
0.02
0.01
0.01
0.00001
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PH30K
1000
C, Capacitance (pF)
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
800
600
400
Coes
200
20
VGE , Gate-to-Emitter Voltage (V)
1200
VCC = 400V
I C = 10A
15
10
5
C
res
0
1
10
0
100
0
VCE , Collector-to-Emitter Voltage (V)
100
V CC = 960V
V GE = 15V
TJ = 25 °C
I C = 10A
2.0
1.5
1.0
0
10
20
30
40
RG
GateResistance
Resistance
R
( Ω(Ohm)
)
G , ,Gate
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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30
40
50
60
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Total Switching Losses (mJ)
Total Switching Losses (mJ)
2.5
20
Q G , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
3.0
10
50
23 Ω
RG = Ohm
VGE = 15V
VCC = 960V
IC = 20 A
10
IC = 10 A
IC = 5 A
1
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4PH30K
RG
TJ
VCC
8.0 VGE
100
23 Ω
= Ohm
= 150 ° C
= 960V
= 15V
I C , Collector Current (A)
Total Switching Losses (mJ)
10.0
6.0
4.0
VGE = 20V
T J = 125 oC
10
2.0
SAFE OPERATING AREA
1
0.0
0
5
10
15
I C , Collector Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
6
20
1
10
100
1000
10000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
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IRG4PH30K
L
D .U .T.
VC *
50V
RL =
0 - 960V
1 00 0V
960V
4 X I [email protected]°C
480µF
960V
Q
R
* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax )
* Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor
w ill inc rea se to obta in ra ted Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
IC
L
D river*
D .U .T.
VC
Fig. 14a - Switching Loss
Test Circuit
50V
1000V
Q
* Driver same type
as D.U.T., VC = 960V
R
S
Q
R
90 %
10 %
S
VC
90 %
Fig. 14b - Switching Loss
t d (o ff)
1 0%
IC 5%
Waveforms
tf
tr
t d (o n )
t=5µ s
Eon
E o ff
E ts = (E o n +E o ff )
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7
IRG4PH30K
Case Outline and Dimensions — TO-247AC
3 .6 5 (.1 4 3 )
3 .5 5 (.1 4 0 )
0 .2 5 (.0 1 0 ) M D B M
1 5 .9 0 (.6 2 6 )
1 5 .3 0 (.6 0 2 )
-B-
-A5 .5 0 (.2 1 7)
2 0 .3 0 (.8 0 0 )
1 9 .7 0 (.7 7 5 )
2X
1
2
-D-
5 .3 0 ( .2 0 9 )
4 .7 0 ( .1 8 5 )
2 .5 0 (.0 8 9 )
1 .5 0 (.0 5 9 )
4
5 .5 0 (.2 17 )
4 .5 0 (.1 77 )
LEAD
1234-
3
-C-
*
1 4 .8 0 (.5 8 3 )
1 4 .2 0 (.5 5 9 )
2 .4 0 ( .0 9 4 )
2 .0 0 ( .0 7 9 )
2X
5 .4 5 (.2 1 5 )
2X
4 .3 0 (.1 7 0 )
3 .7 0 (.1 4 5 )
3X
1 .4 0 (.0 5 6 )
1 .0 0 (.0 3 9 )
0 .2 5 (.0 1 0 ) M
3 .4 0 (.1 3 3 )
3 .0 0 (.1 1 8 )
N O TE S :
1 D IM E N S IO N S & T O L E R A N C IN G
P E R A N S I Y 14 .5 M , 1 9 8 2 .
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 D IM E N S IO N S A R E S H O W N
M ILL IM E T E R S (IN C H E S ).
4 C O N F O R M S T O JE D E C O U T L IN E
T O -2 4 7 A C .
*
A S S IG N M E N T S
GATE
COLLE CTO R
E M IT T E R
COLLE CTO R
L O N G E R L E A D E D (2 0m m )
V E R S IO N A V A IL A B LE (T O -24 7 A D )
T O O R D E R A D D "-E " S U F F IX
T O P A R T N U M B ER
0 .8 0 (.0 3 1 )
0 .4 0 (.0 1 6 )
2 .6 0 ( .1 0 2 )
2 .2 0 ( .0 8 7 )
3X
C A S
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
D im e n s ion s in M illim e te rs a n d (In c h es )
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 6/00
8
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