ETC US5781E

US5781
CMOS High Sensitivity Switch
Preliminary Datasheet
Features and Benefits
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Applications
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Chopper stabilized amplifier stage
New miniature package / thin, high reliability package
Operation down to 3.5V
CMOS for optimum stability, quality, and cost
Solid state switch
Limit switch
Current limit
Interrupter
Ordering Information
Part No.
US5781
US5781
Temperature Suffix
E
L
Package
SO or UA
SO or UA
Functional Diagram
V DD
Description
The US5781 is a unipolar Hall effect sensor IC fabricated from mixed signal CMOS technology. It incorporates advanced chopper stabilization techniques to provide accurate and stable magnetic
switch points. There are many applications for this
sensor in addition to those listed above. The design, specifications and performance have been
optimized for applications of solid state switches.
Output
Voltage
Regulator
The output transistor will be switched on (BOP) in
the presence of a sufficiently strong South pole
magnetic field facing the marked side of the package. Similarly, the output will be switched off (BRP)
in the presence of a weaker South field and remain
off with “0” field. The SOT-23 device is reversed
from the UA package. The SOT-23 output transistor will be switched on (BOP) in the presence of a
sufficiently strong North pole magnetic field subjected to the marked face.
Chopper
GND
UA Package
Pin 1 - V D D
Pin 2 - GND
Pin 3 - Output
Temperature Range
-40°C to 85°C Extended
-40°C to 150°C Automotive
SO Package
Pin 1 - VD D
Pin 2 - Output
Pin 3 - GND
Note: This is a static-sensitive device; please observe ESD precau tions. Reverse VDD protection is not included. For reverse voltage
protection, a 100Ωresistor in series with VDD is recommended.
US5781 CMOS High Sensitivity Switch
3901005781 Rev 1.7
7/23/01
Page 1
US5781
CMOS High Sensitivity Switch
Preliminary Datasheet
US5781 Electrical Specifications
DC operating parameters: TA = -40 to 150oC, VDD = 12V DC (unless otherwise specified).
Parameter
Symbol Test Conditions
Min
Supply Voltage
VDD
Operating
3.5
Supply Current
IDD
B<BRP
0.5
Saturation Voltage
VDS(on)
Output Leakage
Typ
Max
Units
24
V
2.5
5.0
mA
IOUT = 20 mA, B>BOP
0.3
0.5
V
IOFF
B<BRP, VOUT = 27V
0.01
5.0
ìA
Output Rise Time
tr
VDD = 12V, RL = 1.1KÙ, CL = 20pf
0.04
ìs
Output Fall Time
tf
VDD = 12V, RL = 1.1KÙ, CL = 20pf
0.18
ìs
US5781 Magnetic Specifications
Magnetic operating parameters: TA = -40 to 150oC, VDD =12 VDC (unless otherwise specified).
Parameter
Symbol Test Conditions
Min
Typ
Max
Units
Operating Point
BOP
7.0
12.0
15.0
mT
Release Point
BRP
3.5
7.0
10.0
mT
Hysteresis
Bhys
2.0
5.0
7.0
mT
Note: 1 mT = 10 Gauss.
Melexis Inc. reserves the right to make changes without further notice to any products herein to improve reliability, function o r design. Melexis does
not assume any liability arising from the use of any product or application of any product or circuit described herein.
US5781 CMOS High Sensitivity Switch
3901005781 Rev 1.7
7/23/01
Page 2
US5781
CMOS High Sensitivity Switch
Preliminary Datasheet
Performance Graphs
Typical Magnetic Switch Points
versus
Supply Voltage
Typical Magnetic Switch Points
versus Temperature
5781
14.0
5781
14
12
Flux Density (mT)
Flux Density (mT)
12.0
BOP
10.0
BOP
9
8.0
BRP
6
BHy S
BRP
6.0
3
4.0
0
0
5
10
15
20
25
30
-40
0
40
Supply Voltage (V)
150
Output Voltage
versus
Flux Density
5781
14
120
Temperature (ºC)
Min/Max Magnetic Switch
Range Versus Temperature
16
80
5781
30
BOP Max
V DD
12
10
BRP Max
8
6
BOP Min
Output Voltage (V)
Flux Density mV/mT
24
18
B OP
12
4
B RP
6
BRP Min
2
0
V out
0
-40 -20
0
20
40
60
80 100 120 140
-20
Temperature C°
US5781 CMOS High Sensitivity Switch
-10
0
10
20
30
40
Flux Density (mT)
3901005781 Rev 1.7
7/23/01
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US5781
CMOS High Sensitivity Switch
Preliminary Datasheet
Performance Graphs
Typical Saturation Voltage
versus
Temperature
VDD = 12 V, I OUT = 20mA
Typical Supply Current
versus
Supply Voltage
5781
5
5781
500
4
400
VDS(ON)
VDS(ON) (mV)
Supply Current (mA)
TA = -40oC
3
TA = 25 oC
2
300
200
TA = 125oC
1
100
0
0
0
5
10
15
20
25
30
-40
0
120
160
200
Temperature ( C)
Power Dissipation
versus
Temperature
Wave Soldering Parameters
All Devices
All Devices
280
400
260
UA Package
R θJA =206oC/W
Solder Temperature (oC)
Package Power Dissipation (mW)
80
o
Supply Voltage (V)
500
40
300
200
100
240
220
200
SO Package
RθJA =575oC/W
0
-40
0
40
80
120
160
200
0
Temperature ( oC)
US5781 CMOS High Sensitivity Switch
5
10
15
20
25
30
Time in Wave Solder (Seconds)
3901005781 Rev 1.7
7/23/01
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US5781
CMOS High Sensitivity Switch
Preliminary Datasheet
Unique Features
CMOS Hall IC Technology
The chopper stabilized amplifier uses switched
capacitor techniques to eliminate the amplifier offset voltage, which, in bipolar devices, is a major
source of temperature sensitive drift. CMOS
makes this advanced technique possible. The
CMOS chip is also much smaller than a bipolar
chip, allowing very sophisticated circuitry to be
placed in less space. The small chip size also
contributes to lower physical stress and less
power consumption.
Automotive and Severe
Environment Protection
Circuit
R1 100Ω
VDD
RL
1.2K
Z1
D1
C1
4.7nF
Supply
Voltage
Installation Comments
Hall IC
Consider temperature coefficients of Hall IC and
magnetics, as well as air gap life time variations.
Observe temperature limits during wave soldering.
VSS
OUT
C2
4.7nF
Applications
If reverse supply protection is desired, use a resistor in series with the VDD pin. The resistor will
limit the supply current (Fault), IDD, to 50 mA. For
severe EMC conditions, use the application circuit
on this page.
Two Wire Current Biasing Circuit
RL
I IN
Iout
ID D
V DD
Absolute Maximum Ratings
Supply Voltage (Operating), VDD
Supply Current (Fault), IDD
Output Voltage, VOUT
Output Current (Fault), IOUT
Power Dissipation, PD
3.5V to 24V
50mA
3.5V to 24V
50mA
100mW
Operating Temperature Range, T A
-40 to 150°C
Storage Temperature Range, T S
-65 to 150°C
Maximum Junction Temp, TJ
175°C
ESD Sensitivity (All Pins)
+/- 2KV
US5781 CMOS High Sensitivity Switch
Hall
IC
Rb
The resistors R b and R L can be used to bias the input
current, Iin. Refer to the part specification for limiting
values. This circuit will help in getting the precise ON
and OFF currents desired.
BRP = Ioff = (VD D / Rb + IDD )
B OP = Ion = (Ioff + VD D / RL )
3901005781 Rev 1.7
7/23/01
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US5781
CMOS High Sensitivity Switch
Preliminary Datasheet
Physical Characteristics
UA Package Dimensions
45o
Typical
1.60
1.40
2.13
1.87
4.30
3.90
0.84
0.63
UA Hall Plate / Chip Location
0.45
0.41
5o
Typical
2.64
2.34
1.53
1.27
U57 *
115
3.20
2.80
0.48
0.43
45o
Typical
Marked
Surface
1.75
1.55
All Dimensions in millimeters
0.38
Typical
(see note 3)
0.20
0.00
0.41
0.35
1
2
NOTES:
1.) Controlling dimension: mm
2.) Leads must be free of flash and
plating voids
3.) Do not bend leads within 1mm
of
lead to package
interface.
4.) Package dimensions exclude
molding flash
5.) Tolerance is 0.254mm unless
otherwise specified
3
1.30
1.24
0.20
MIN
0.50
0.35
*
57104
= Supplier (Melexis)
= Series (5780)
Line 2:
1st digit (1)
2nd and 3rd digits(15)
= Year (2001)
= Week of Year
PINOUT:
Pin 1
Pin 2
Pin 3
V DD
GND
Output
0.41
0.35
2.57
2.51
SOT-23 Package Dimensions
3.00
2.60
15.5
14.5
* MARKING:
Line 1:
1st digit (U)
2nd and 3rd digits (57)
1.80
1.50
chip
0.66
0.56
0.25
0.10
2.10
1.70
3.10
2.70
0.10
0.00
0.90
0.70
* MARKING:
1st & 2nd Digit (57) = Series (5780)
3rd Digit(1)
= Year - 2001
Last Digits (04)
= Week of Year
SOT-23 Hall Plate / Chip Location
3
Bottom View of Package
0.95
0.85
NOTES:
1.) Controlling dimension: mm
2.) Lead thickness after solder plating will
be 0.254 mm maximum
3.) Package dimensions exclude molding
flash
4.) The end flash shall not exceed 0.127mm
on each side of package
5.) Tolerance is 0.254mm unless otherwise
specified
2
1
1.55
1.45
PINOUT:
Pin 1
Pin 2
Pin 3
1.30
1.00
V DD
Output
GND
For the latest version of this document,
Go to our website at:
WWW.melexis.com
Or for additional information
Contact Melexis Direct:
Europe and Japan
E-mail: [email protected]
Phone: 011-32-13-670-780
US5781 CMOS High Sensitivity Switch
USA and rest of the world
E-mail: [email protected]
Phone: (603)-223-2362
3901005781 Rev 1.7
7/23/01
Page 6