RURD460, RURD460S Data Sheet January 2002 4A, 600V Ultrafast Diodes Features The RURD460, and RURD460S are ultrafast diodes with soft recovery characteristics (trr < 55ns). They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction. • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <55ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V These devices are intended for use as freewheeling/ clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. • Avalanche Energy Rated Formerly developmental type TA49035. • Power Switching Circuits Applications • Switching Power Supplies • General Purpose Ordering Information PART NUMBER • Planar Construction PACKAGE BRAND RURD460 TO-251 RUR460 RURD460S TO-252 RUR460 Packaging JEDEC STYLE TO-251 ANODE CATHODE NOTE: When ordering, use the entire part number. Add suffix 9A to obtain the TO-252 variant in tape and reel, i.e., RURD460S9A. CATHODE (FLANGE) Symbol K JEDEC STYLE TO-252 A CATHODE CATHODE (FLANGE) ANODE Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IF(AV) (TC = 160oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figures 9 and 10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ Maximum Lead Temperature for Soldering Leads at 0.063 in. (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TPKG ©2002 Fairchild Semiconductor Corporation RURD460 RURD460S 600 600 600 4 UNITS V V V A 8 A 40 A 50 10 -65 to 175 W mJ oC 300 260 oC oC RURD460, RURD460S Rev. B RURD460, RURD460S TC = 25oC, Unless Otherwise Specified Electrical Specifications SYMBOL TEST CONDITION MIN TYP MAX UNITS IF = 4A - - 1.5 V IF = 4A, TC = 150oC - - 1.2 V VR = 600V - - 100 µA VR = 600V, TC = 150oC - - 500 µA IF = 1A, dIF/dt = 100A/µs - - 55 ns IF = 4A, dIF/dt = 100A/µs - - 60 ns ta IF = 4A, dIF/dt = 100A/µs - 32 - ns tb IF = 4A, dIF/dt = 100A/µs - 15 - ns QRR IF = 4A, dIF/dt = 100A/µs - 50 - nC VR = 10V, IF = 0A - 15 - pF - - 3 oC/W VF IR trr CJ RθJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 8), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 8). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 8). QRR = Reverse recovery time. CJ = Junction capacitance. RθJC = Thermal resistance junction to case. pw = Pulse width. D = Duty cycle. Typical Performance Curves 500 20 IR , REVERSE CURRENT (µA) IF , FORWARD CURRENT (A) 175oC 175oC 10 100oC 25oC 1 0.5 100 10 100oC 1 0.1 25oC 0.01 0 0.5 1 1.5 2 2.5 VF , FORWARD VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE ©2002 Fairchild Semiconductor Corporation 0 100 200 300 400 500 600 VR , REVERSE VOLTAGE (V) FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE RURD460, RURD460S Rev. B RURD460, RURD460S Typical Performance Curves (Continued) 50 100 TC = 25oC, dIF/dt = 100A/µs TC = 100oC, dIF/dt = 100A/µs trr 30 ta 20 tb 10 0 0.5 80 t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 40 1 60 tb 20 0 4 0.5 IF(AV) , AVERAGE FORWARD CURRENT (A) TC = 175oC, dIF/dt = 100A/µs 125 t, RECOVERY TIMES (ns) 4 FIGURE 4. trr , ta AND tb CURVES vs FORWARD CURRENT 150 trr 75 tb ta 25 0 0.5 1 IF , FORWARD CURRENT (A) FIGURE 3. trr , ta AND tb CURVES vs FORWARD CURRENT 50 ta 40 IF , FORWARD CURRENT (A) 100 trr 4 1 5 4 DC 3 SQ. WAVE 2 1 0 150 155 160 165 170 175 TC , CASE TEMPERATURE (oC) IF , FORWARD CURRENT (A) FIGURE 5. trr , ta AND tb CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT RG VGE CURRENT SENSE + IGBT t1 IF - VDD dIF dt trr ta tb 0 0.25 IRM t2 IRM FIGURE 7. trr TEST CIRCUIT ©2002 Fairchild Semiconductor Corporation FIGURE 8. trr WAVEFORMS AND DEFINITIONS RURD460, RURD460S Rev. B RURD460, RURD460S Test Circuits and Waveforms (Continued) I = 1A L = 20mH R < 0.1Ω EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) VAVL L CURRENT SENSE R + VDD IL IL I V Q1 VDD DUT t0 FIGURE 9. AVALANCHE ENERGY TEST CIRCUIT ©2002 Fairchild Semiconductor Corporation t1 t2 t FIGURE 10. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS RURD460, RURD460S Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4