MOTOROLA BUL45D2

Order this document
by BUL45D2/D
SEMICONDUCTOR TECHNICAL DATA
 % # %$!&
$*& &#''($& *(
POWER TRANSISTORS
5 AMPERES
700 VOLTS
75 WATTS
#(&( $!!($&"((&
$ # )!(# #(
#('()&($# (*$&
The BUL45D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).
High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time)
make it ideally suitable for light ballast applications. Therefore, there is no need to
guarantee an hFE window.
Main features:
• Low Base Drive Requirement
• High Peak DC Current Gain (55 Typical) @ IC = 100 mA
• Extremely Low Storage Time Min/Max Guarantees Due to the
H2BIP Structure which Minimizes the Spread
• Integrated Collector–Emitter Free Wheeling Diode
• Fully Characterized and Guaranteed Dynamic VCE(sat)
• “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
It’s characteristics make it also suitable for PFC application.
CASE 221A–06
TO–220AB
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Sustaining Voltage
VCEO
400
Vdc
Collector–Base Breakdown Voltage
VCBO
700
Vdc
Collector–Emitter Breakdown Voltage
VCES
700
Vdc
Emitter–Base Voltage
VEBO
12
Vdc
Collector Current — Continuous
— Peak (1)
IC
ICM
5
10
Adc
Base Current — Continuous
Base Current — Peak (1)
IB
IBM
2
4
Adc
*Total Device Dissipation @ TC = 25_C
*Derate above 25°C
PD
75
0.6
Watt
W/_C
TJ, Tstg
– 65 to 150
_C
RθJC
RθJA
1.65
62.5
TL
260
Operating and Storage Temperature
THERMAL CHARACTERISTICS
Thermal Resistance
— Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes:
1/8″ from case for 5 seconds
_C/W
_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
BUL45D2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector–Emitter Sustaining Voltage
(IC = 100 mA, L = 25 mH)
VCEO(sus)
400
450
Vdc
Collector–Base Breakdown Voltage
(ICBO = 1 mA)
VCBO
700
910
Vdc
Emitter–Base Breakdown Voltage
(IEBO = 1 mA)
VEBO
12
14.1
Vdc
Collector Cutoff Current
(VCE = Rated VCEO, IB = 0)
ICEO
100
µAdc
ICES
100
500
100
µAdc
IEBO
100
µAdc
OFF CHARACTERISTICS
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
Collector Cutoff Current (VCE = 500 V, VEB = 0)
@ TC = 25°C
@ TC = 125°C
@ TC = 125°C
Emitter–Cutoff Current
(VEB = 10 Vdc, IC = 0)
ON CHARACTERISTICS
Base–Emitter Saturation Voltage
(IC = 0.8 Adc, IB = 80 mAdc)
VBE(sat)
Vdc
@ TC = 25°C
@ TC = 125°C
0.8
0.7
1
0.9
@ TC = 25°C
@ TC = 125°C
0.89
0.79
1
0.9
@ TC = 25°C
@ TC = 125°C
0.28
0.32
0.4
0.5
(IC = 2 Adc, IB = 0.4 Adc)
@ TC = 25°C
@ TC = 125°C
0.32
0.38
0.5
0.6
(IC = 0.8 Adc, IB = 40 mAdc)
@ TC = 25°C
@ TC = 125°C
0.46
0.62
0.75
1
(IC = 2 Adc, IB = 0.4 Adc)
Collector–Emitter Saturation Voltage
(IC = 0.8 Adc, IB = 80 mAdc)
DC Current Gain
(IC = 0.8 Adc, VCE = 1 Vdc)
(IC = 2 Adc, VCE = 1 Vdc)
VCE(sat)
Vdc
hFE
@ TC = 25°C
@ TC = 125°C
22
20
34
29
@ TC = 25°C
@ TC = 125°C
10
7
14
9.5
—
DIODE CHARACTERISTICS
Forward Diode Voltage
(IEC = 1 Adc)
V
1.04
0.7
1.5
(IEC = 2 Adc)
@ TC = 25°C
@ TC = 125°C
1.2
1.6
(IEC = 0.4 Adc)
@ TC = 25°C
@ TC = 125°C
0.85
0.62
1.2
Forward Recovery Time (see Figure 27)
(IF = 1 Adc, di/dt = 10 A/µs)
2
VEC
@ TC = 25°C
@ TC = 125°C
Tfr
330
ns
@ TC = 25°C
(IF = 2 Adc, di/dt = 10 A/µs)
@ TC = 25°C
360
(IF = 0.4 Adc, di/dt = 10 A/µs)
@ TC = 25°C
320
Motorola Bipolar Power Transistor Device Data
BUL45D2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
fT
13
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
Cob
50
75
pF
Input Capacitance
(VEB = 8 Vdc)
Cib
340
500
pF
VCE(dsat)
3.7
9.4
V
DYNAMIC SATURATION VOLTAGE
Dynamic Saturation
Voltage:
Determined 1 µs and
3 µs respectively after
rising IB1 reaches
90% of final IB1
IC = 1 A
IB1 = 100 mA
VCC = 300 V
IC = 2 A
IB1 = 0.8 A
VCC = 300 V
@ 1 µs
@ TC = 25°C
@ TC = 125°C
@ 3 µs
@ TC = 25°C
@ TC = 125°C
0.35
2.7
V
@ 1 µs
@ TC = 25°C
@ TC = 125°C
3.9
12
V
@ 3 µs
@ TC = 25°C
@ TC = 125°C
0.4
1.5
V
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs)
Turn–on Time
Turn–off Time
IC = 2 Adc, IB1 = 0.4 Adc
IB2 = 1 Adc
VCC = 300 Vdc
Turn–on Time
Turn–off Time
IC = 2 Adc, IB1 = 0.4 Adc
IB2 = 0.4 Adc
VCC = 300 Vdc
@ TC = 25°C
@ TC = 125°C
ton
90
105
150
ns
@ TC = 25°C
@ TC = 125°C
toff
1.15
1.5
1.3
µs
@ TC = 25°C
@ TC = 125°C
ton
90
110
150
ns
@ TC = 25°C
@ TC = 125°C
toff
2.4
µs
2.1
3.1
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 µH)
Fall Time
@ TC = 25°C
@ TC = 125°C
tf
90
93
150
ns
@ TC = 25°C
@ TC = 125°C
ts
0.72
1.05
0.9
µs
Crossover Time
@ TC = 25°C
@ TC = 125°C
tc
95
95
150
ns
Fall Time
@ TC = 25°C
@ TC = 125°C
tf
80
105
150
ns
@ TC = 25°C
@ TC = 125°C
ts
2.25
µs
@ TC = 25°C
@ TC = 125°C
tc
300
ns
Storage Time
Storage Time
IC = 1 Adc
IB1 = 100 mAdc
IB2 = 500 mAdc
IC = 2 Adc
IB1 = 0.4 Adc
IB2 = 0.4 Adc
Crossover Time
Motorola Bipolar Power Transistor Device Data
1.95
2.9
225
450
3
BUL45D2
TYPICAL STATIC CHARACTERISTICS
100
100
VCE = 5 V
TJ = 125°C
60
TJ = 25°C
40
TJ = – 20°C
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
VCE = 1 V
80
20
80
TJ = 125°C
60
TJ = 25°C
40
TJ = – 20°C
20
0
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
0
0.001
10
Figure 1. DC Current Gain @ 1 Volt
10
Figure 2. DC Current Gain @ 5 Volt
4
10
TJ = 25°C
IC/IB = 5
3
VCE , VOLTAGE (VOLTS)
VCE , VOLTAGE (VOLTS)
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
2
5A
1
1A
2A
3A
TJ = 25°C
1
TJ = 125°C
4A
TJ = – 20°C
IC = 500 mA
0
0.001
0.01
1
0.1
IB, BASE CURRENT (AMPS)
0.1
0.001
10
Figure 3. Collector Saturation Region
10
Figure 4. Collector–Emitter Saturation Voltage
10
10
IC/IB = 20
VCE , VOLTAGE (VOLTS)
IC/IB = 10
VCE , VOLTAGE (VOLTS)
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
1
TJ = – 20°C
1
TJ = – 20°C
TJ = 25°C
TJ = 125°C
TJ = 125°C
TJ = 25°C
0.1
0.001
1
0.01
0.1
IC, COLLECTOR CURRENT (AMPS)
Figure 5. Collector–Emitter Saturation Voltage
4
10
0.1
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 6. Collector–Emitter Saturation Voltage
Motorola Bipolar Power Transistor Device Data
BUL45D2
TYPICAL STATIC CHARACTERISTICS
10
10
IC/IB = 10
VBE , VOLTAGE (VOLTS)
VBE , VOLTAGE (VOLTS)
IC/IB = 5
TJ = 25°C
TJ = – 20°C
1
TJ = 125°C
TJ = – 20°C
1
TJ = 125°C
TJ = 25°C
0.1
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
0.1
0.001
10
Figure 7. Base–Emitter Saturation Region
10
FORWARD DIODE VOLTAGE (VOLTS)
IC/IB = 20
VBE , VOLTAGE (VOLTS)
10
Figure 8. Base–Emitter Saturation Region
10
TJ = – 20°C
1
TJ = 125°C
TJ = 25°C
0.1
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
25°C
1
125°C
0.1
0.01
10
Figure 9. Base–Emitter Saturation Region
1
0.1
REVERSE EMITTER–COLLECTOR CURRENT (AMPS)
10
Figure 10. Forward Diode Voltage
1000
1000
Cib (pF)
TJ = 25°C
f(test) = 1 MHz
BVCER @ 10 mA
900
100
BVCER (VOLTS)
C, CAPACITANCE (pF)
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
Cob (pF)
10
TJ = 25°C
800
700
600
BVCER(sus) @ 200 mA
500
400
1
1
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
Motorola Bipolar Power Transistor Device Data
100
10
100
RBE (Ω)
1000
Figure 12. BVCER = f(ICER)
5
BUL45D2
TYPICAL SWITCHING CHARACTERISTICS
1000
5
t, TIME (ns)
800
TJ = 125°C
TJ = 25°C
600
IC/IB = 10
400
3
2
IC/IB = 5
200
0.5
1
2
2.5
3
1.5
IC, COLLECTOR CURRENT (AMPS)
3.5
0
4
0.5
1.5
2
2.5
3
3.5
4
Figure 14. Resistive Switch Time, toff
4
5
IBon = IBoff
VCC = 15 V
VZ = 300 V
LC = 200 µH
IC/IB = 5
2
1
IBon = IBoff
VCC = 15 V
VZ = 300 V
LC = 200 µH
4
t, TIME ( µs)
3
t, TIME ( µs)
1
IC, COLLECTOR CURRENT (AMPS)
Figure 13. Resistive Switch Time, ton
3
2
1
TJ = 125°C
TJ = 25°C
0
TJ = 125°C
TJ = 25°C
0
0
1
2
3
IC, COLLECTOR CURRENT (AMPS)
0
4
Figure 15. Inductive Storage Time,
tsi @ IC/IB = 5
1
3
2
IC, COLLECTOR CURRENT (AMPS)
4
Figure 16. Inductive Storage Time,
tsi @ IC/IB = 10
600
400
IBon = IBoff
VCC = 15 V
VZ = 300 V
LC = 200 µH
500
TJ = 125°C
TJ = 25°C
IBoff = IBon
VCC = 15 V
VZ = 300 V
LC = 200 µH
300
tc
t, TIME (ns)
400
t, TIME (ns)
IC/IB = 5
TJ = 125°C
TJ = 25°C
1
0
IBon = IBoff
VCC = 300 V
PW = 20 µs
IC/IB = 10
4
t, TIME ( µs)
IBon = IBoff
VCC = 300 V
PW = 20 µs
300
200
200
100
TJ = 125°C
TJ = 25°C
100
tfi
0
0
1
3
2
IC, COLLECTOR CURRENT (AMPS)
Figure 17. Inductive Switching,
tc & tfi @ IC/IB = 5
6
0
4
0
1
2
3
IC, COLLECTOR CURRENT (AMPS)
Figure 18. Inductive Switching,
tfi @ IC/IB = 10
Motorola Bipolar Power Transistor Device Data
4
BUL45D2
TYPICAL SWITCHING CHARACTERISTICS
1500
5
t, TIME (ns)
1000
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
t si , STORAGE TIME (µs)
IBoff = IBon
VCC = 15 V
VZ = 300 V
LC = 200 µH
500
IC = 1 A
4
IBon = IBoff
VCC = 15 V
VZ = 300 V
LC = 200 µH
3
IC = 2 A
0
2
0
2
1
3
IC, COLLECTOR CURRENT (AMPS)
4
0
5
Figure 19. Inductive Switching,
tc @ IC/IB = 10
15
20
Figure 20. Inductive Storage Time
450
1400
IBoff = IBon
VCC = 15 V
VZ = 300 V
LC = 200 µH
TJ = 125°C
TJ = 25°C
IBon = IBoff
VCC = 15 V
VZ = 300 V
LC = 200 µH
1200
t c , CROSSOVER TIME (ns)
350
t fi , FALL TIME (ns)
10
hFE, FORCED GAIN
IC = 1 A
250
150
1000
TJ = 125°C
TJ = 25°C
IC = 2 A
800
600
400
200
IC = 2 A
IC = 1 A
0
50
2
4
6
8
10
12
14
hFE, FORCED GAIN
16
18
2
20
Figure 21. Inductive Fall Time
8
10
12
14
hFE, FORCED GAIN
16
18
20
360
2000
IBon = IBoff
VCC = 15 V
VZ = 300 V
LC = 200 µH
t fr , FORWARD RECOVERY TIME (ns)
IB1 = IB2
t, TIME (ns)
6
Figure 22. Inductive Crossover Time
3000
IB = 50 mA
1000
4
IB = 100 mA
IB = 200 mA
IB = 500 mA
dI/dt = 10 A/µs
TC = 25°C
340
320
IB = 1 A
0
0.5
300
1
3
1.5
2
2.5
IC, COLLECTOR CURRENT (AMPS)
3.5
Figure 23. Inductive Storage Time, tsi
Motorola Bipolar Power Transistor Device Data
4
0
0.5
1
1.5
IF, FORWARD CURRENT (AMP)
2
Figure 24. Forward Recovery Time tfr
7
BUL45D2
TYPICAL SWITCHING CHARACTERISTICS
10
VCE
9
dyn 1 µs
IC
90% IC
8
dyn 3 µs
tfi
tsi
7
6
0V
Vclamp
5
10% IC
10% Vclamp
tc
4
IB
90% IB
3
1 µs
2
IB
90% IB1
1
3 µs
0
0
1
2
3
TIME
Figure 25. Dynamic Saturation
Voltage Measurements
4
TIME
5
6
7
Figure 26. Inductive Switching Measurements
VFRM
VFR (1.1 VF unless
otherwise specified)
VF
VF
tfr
0.1 VF
0
IF
10% IF
0
2
4
6
8
10
Figure 27. tfr Measurements
8
Motorola Bipolar Power Transistor Device Data
8
BUL45D2
TYPICAL SWITCHING CHARACTERISTICS
Table 1. Inductive Load Switching Drive Circuit
+15 V
1 µF
150 Ω
3W
100 Ω
3W
IC PEAK
100 µF
MTP8P10
VCE PEAK
VCE
MTP8P10
RB1
MPF930
IB1
MUR105
MPF930
+10 V
Iout
IB
A
50 Ω
MJE210
COMMON
150 Ω
3W
500 µF
IB2
RB2
MTP12N10
V(BR)CEO(sus)
L = 10 mH
RB2 = ∞
VCC = 20 Volts
IC(pk) = 100 mA
1 µF
–Voff
Inductive Switching
L = 200 µH
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired IB1
RBSOA
L = 500 µH
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired IB1
TYPICAL CHARACTERISTICS
IC, COLLECTOR CURRENT (AMPS)
6
1 µs
10
10 µs
5 ms
1
1 ms
DC
0.1
EXTENDED SOA
IC, COLLECTOR CURRENT (AMPS)
100
0.01
TC ≤ 125°C
GAIN ≥ 5
LC = 2 mH
5
4
3
2
–5 V
1
0V
–1.5 V
0
10
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1000
Figure 28. Forward Bias Safe Operating Area
Motorola Bipolar Power Transistor Device Data
200
500
300
400
600
700
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
800
Figure 29. Reverse Bias Safe Operating Area
9
BUL45D2
TYPICAL CHARACTERISTICS
POWER DERATING FACTOR
1
SECOND BREAKDOWN
DERATING
0.8
0.6
THERMAL DERATING
0.4
0.2
0
20
40
80
100
120
60
TC, CASE TEMPERATURE (°C)
160
140
Figure 30. Forward Bias Power Derating
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 28 is based
on T C = 25°C; T J(pk) is variable depending on power level.
Second breakdown pulse limits are valid for duty cycles to
10% but must be derated when T C > 25°C. Second
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown on
Figure 28 may be found at any case temperature by using
the appropriate curve on Figure 30.
TJ(pk) may be calculated from the data in Figure 31. At any
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations
imposed by second breakdown. For inductive loads, high
voltage and current must be sustained simultaneously during
turn–off with the base to emitter junction reverse biased. The
safe level is specified as a reverse biased safe operating
area (Figure 29). This rating is verified under clamped
conditions so that the device is never subjected to an
avalanche mode.
TYPICAL THERMAL RESPONSE
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1
0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.01
0.1
1
10
RθJC(t) = r(t) RθJC
RθJC = 2.5°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
100
1000
t, TIME (ms)
Figure 31. Typical Thermal Response (ZθJC(t)) for BUL45D2
10
Motorola Bipolar Power Transistor Device Data
BUL45D2
PACKAGE DIMENSIONS
–T–
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
Motorola Bipolar Power Transistor Device Data
11
BUL45D2
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us:
USA / EUROPE: Motorola Literature Distribution;
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315
MFAX: [email protected] – TOUCHTONE (602) 244–6609
INTERNET: http://Design–NET.com
HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
12
◊
Motorola Bipolar Power Transistor Device Data
*BUL45D2/D*
BUL45D2/D