IRF IRAMS06UP60A

PD-95831 RevB
IRAMS06UP60A
Series
6A, 600V
Plug N DriveTM Integrated Power
Module for Appliance Motor Drive
Description
International Rectifier’s IRAMS06UP60A is an Integrated Power Module developed and optimized for
electronic motor control in appliance applications specifically for VF compressor drives for refrigerators and
freezer or in heating and ventilation as electronic fan controls. The IRAMS06UP60A offers an extremely
compact, high performance AC motor-driver in a single isolated package for a very simple design.
A built-in temperature monitor and over-current protection, along with the short-circuit rated IGBTs and
integrated under-voltage lockout function, deliver high level of protection and fail-safe operation.
The integration of the bootstrap diodes for the high-side driver section, and the single polarity power
supply required to drive the internal circuitry, simplify the utilization of the module and deliver further
cost reduction advantages.
Features
•
•
•
•
•
•
•
•
•
•
•
•
Integrated Gate Drivers and Bootstrap Diodes
Temperature Monitor
Overcurrent shutdown
Fully Isolated Package.
Low V CE(on) Non Punch Through IGBT
Technology
Undervoltage lockout for all channels
Matched propagation delay for all channels
Schmitt-triggered input logic
Cross-conduction prevention logic
Lower di/dt gate driver for better noise immunity
Motor Power range 0.1~0.5kW / 85~253 Vac
Isolation 2000VRMS /1min
Absolute Maximum Ratings
Parameter
Description
VCES
Maximum IGBT Blocking Voltage
600
V+
Io @ TC=25°C
Positive Bus Input Voltage
450
Io @ TC=100°C
RMS Phase Current
3
Ipk
Maximum Peak Phase Current (tp<100ms)
10
RMS Phase Current
Max. Value
Units
V
6
A
Fp
Maximum PWM Carrier Frequency
20
Pd
Maximum Power dissipation per Phase
7.5
W
Viso
Isolation Voltage (1min)
2000
VRMS
TJ (IGBT & Diodes)
Operating Junction temperature Range
-40 to +150
TJ (Driver IC)
Operating Junction temperature Range
-40 to +150
T
Mounting torque Range (M3 screw)
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0.8 to 1.0
kHz
°C
Nm
1
IRAMS06UP60A
Internal Electrical Schematic - IRAMS06UP60A
V+ (10)
VRU (12)
VRV (13)
VRW (14)
Rg1
Rg3
Rg5
VB1 (7)
U, VS1 (8)
VB2 (4)
V, VS2 (5)
VB3 (1)
W, VS3 (2)
23 VS1
22 21 20 19 18 17
VB2 HO2 VS2 VB3 HO3 VS3
Rg2
LO1 16
Rg4
24 HO1
R3
LO2 15
25 VB1
1 VCC
HIN1 (15)
HIN2 (16)
HIN3 (17)
2 HIN1
LIN1 (18)
5 LIN1
Rg6
Driver IC
LO3 14
3 HIN2
4 HIN3
LIN2 LIN3 F ITRIP EN RCIN VSS COM
6
7
8
9
10
11
12 13
LIN2 (19)
R1
LIN3 (20)
T/ITRIP (21)
RT
VDD (22)
R2
THERMISTOR
C
VSS (23)
2
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IRAMS06UP60A
Inverter Section Electrical Characteristics @ TJ = 25°C
Symbol
Parameter
Min
Typ
Max
Units Conditions
V(BR)CES
Collector-to-Emitter Breakdown
Voltage
600
---
---
V
VIN =5V, IC=250µA
∆V(BR)CES / ∆T
Temperature Coeff. Of
Breakdown Voltage
---
0.3
---
V/°C
VIN =5V, IC=1.0mA
(25°C - 150°C)
VCE(ON)
Collector-to-Emitter Saturation
Voltage
---
1.9
2.4
---
2.2
2.6
ICES
Zero Gate Voltage Collector-toEmitter Current
---
15
45
---
60
170
Ilk_module
Zero Gate Voltage Phase-tophase Current
--
--
50
VFM
Diode Forward Voltage Drop
---
1.45
1.85
---
1.25
1.65
V
µA
µA
V
IC=3A, VDD=15V
IC=3A, VDD=15V, TJ=150°C
VIN =5V, V+=600V
VIN =5V, V+=600V, TJ=150°C
VIN =5V, V+=600V
IC=3A
IC=3A, TJ=150°C
Inverter Section Switching Characteristics @ TJ = 25°C
Symbol
Parameter
Min
Typ
Max
Eon
Turn-On Switching Loss
---
130
235
Eoff
Turn-Off Switching Loss
---
65
120
Etot
Total Switching Loss
---
195
355
Eon
Turn-on Swtiching Loss
---
200
345
Eoff
Turn-off Switching Loss
---
90
150
Etot
Total Switching Loss
---
290
495
Erec
Diode Reverse Recovery
energy
---
50
trr
Diode Reverse Recovery time
---
150
RBSOA
Reverse Bias Safe Operating
Area
SCSOA
Short Circuit Safe Operating
Area
Units Conditions
µJ
See CT1
---
TJ=25°C
TJ=150°C
µJ
Energy losses include "tail" and
diode reverse recovery
110
µJ
200
ns
TJ=150°C, V+ =400V VDD =15V,
IF =3A, L=1mH
TJ=150°C, I C=3A, VP=600V
V+=480V, VDD=+15V to 0V
See CT3
FULL SQUARE
10
IC=3A, V+=400V
VDD=15V, L=1mH
---
µs
TJ=150°C, VP=600V,
V+=360V,
VDD=+15V to 0V
See CT2
Thermal Resistance
Symbol
Parameter
Min
Typ
Max
Rth(J-C)
Junction to case thermal
resistance, each IGBT under
inverter operation.
---
---
6.5
Rth(J-C)
Junction to case thermal
resistance, each Diode under
inverter operation.
---
---
9
°C/W
Rth(C-S)
Thermal Resistance case to
sink
---
0.1
---
°C/W
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Units Conditions
°C/W
Flat, greased surface.
Heatsink compound thermal
conductivity - 1W/mK
3
IRAMS06UP60A
Absolute Maximum Ratings Driver Function
Absolute Maximum Ratings indicate substaines limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to VSS . (Note 1)
14
Symbol
VS1,2,3
Definition
High Side offset voltage
Min
-0.3
Max
600
Units
V
VB1,2,3
High Side floating supply voltage
-0.3
20
V
VDD
Low Side and logic fixed supply voltage
-0.3
20
V
VIN
Input voltage LIN, HIN, T/ITRIP
-0.3
7
V
TJ
Juction Temperature
-40
150
°C
Recommended Operating Conditions Driver Function
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within
the recommended conditions. All voltages are absolute referenced to VSS. The VS offset is tested with all supplies biased at 15V differential (Note 1). All input pin (VIN ) and ITRIP are clamped with a 5.2V zener diode and pull-up resistor
to VDD
Symbol
VB1,2,3
Definition
High side floating supply voltage
Min
VS+12
Max
VS+20
VS1,2,3
High side floating supply offset voltage
Note 2
450
VDD
Low side and logic fixed supply voltage
12
20
VITRIP
T/ITRIP input voltage
VSS
VSS+5
VIN
Logic input voltage LIN, HIN
VSS
VSS+5
Units
V
V
V
Static Electrical Characteristics Driver Function
VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to VSS and are applicable to all six channels. (Note 1)
Symbol
VIN,th+
Definition
Positive going input threshold
Min
3.0
Typ
---
Max
---
Units
V
VIN,th-
Negative going input threshold
---
---
0.8
V
VCCUV+
VBSUV+
VCC and VBS supply undervoltage
Positive going threshold
10.6
11.1
11.6
V
VCCUVVBSUV-
VCC and VBS supply undervoltage
Negative going threshold
10.4
10.9
11.4
V
VCCUVH
VBSUVH
VCC and VBS supply undervoltage
Ilockout hysteresis
---
0.2
---
V
IQBS
Quiescent VBS supply current
---
70
120
µA
IQCC
Quiscent VCC supply current
---
1.6
2.3
mA
ILK
Offset Supply Leakage Current
---
---
50
IIN+
Input bias current (OUT=LO)
---
100
220
IIN+
Input bias current (OUT=HI)
---
200
300
µA
µA
µA
V(ITRIP)
ITRIP threshold Voltage (OUT=HI or OUT=LO)
3.85
4.3
4.75
V
4
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IRAMS06UP60A
Dynamic Electrical Characteristics
VDD=VBS=VBIAS=15V, Io=1A, VD=9V, PWMIN=2kHz, V IN_ON=VIN_th+, V IN_OFF=VIN_thTA=25°C, unless otherwise specified
Symbol
Definition
Min
Typ
Max
Units
TON
Input to output propagation turn-on delay time (see fig.11)
-
470
-
ns
TOFF
Input to output propagation turn-off delay time (see fig. 11)
-
615
-
ns
DT
Dead Time
-
290
-
ns
I/TTrip
T/ITrip to six switch to turn-off propagation delay (see fig. 2)
-
750
-
ns
TFCLTRL
Post ITrip to six switch to turn-off clear time (see fig. 2)
-
9
-
ms
Internal NTC - Thermistor Characteristics
Parameter
Typ
Units
R25
Resistance
100 +/- 3%
kΩ
TC = 25°C
R125
Resistance
2.522 + 17.3 % /- 14.9%
kΩ
TC = 125°C
B
B-constant (25-50°C)
4250 +/- 2%
k
-40 / 125
°C
1
mW/°C
Temperature Range
Typ. Dissipation constant
Conditions
R2 = R 1e [B(1/T2 - 1/T1)]
TC = 25°C
Note 1: For more details, see IR21365 data sheet
Note 2: Logic operational for Vs from V- -5V to V- +600V. Logic state held for Vs from V- -5V to V- -VBS. (please refer to
DT97-3 for more details)
Thermistor Built-in IRAMS06UP60A
VCC (22)
NTC
T/ITRIP (21)
6.8k
12K
IR21365
VSS (23)
Note 3: The Maximum recommended sense voltage at the T/ITRIP terminal under normal operating conditions is 3.3V.
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5
IRAMS06UP60A
HIN1,2,3
LIN1,2,3
HO1,2,3
LO1,2,3
Itrip
U,V,W
Figure1. Input/Output Timing Diagram
Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output
voltage would be determined by the direction of current flow in the load.
V+
Ho
Hin1,2,3
(15,16,17)
(18,19,20)
6
HIN1,2,3
LIN1,2,3
U,V,W
0
0
0
1
0
1
1
X
1
0
1
X
V+
0
X
X
U,V,W
(8,5,2)
IC
Driver
Lin1,2,3
Itrip
Lo
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IRAMS06UP60A
HIN1,2,3
LIN1,2,3
50%
T/Itrip
U,V,W
50%
tfltclr
Figure 2. ITrip Timing Waveform
Note 6: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output
voltage would be determined by the direction of current flow in the load.
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7
IRAMS06UP60A
Module Pin-Out Description
8
Pin
Name
1
VB3
2
W,VS3
Description
High Side Floating Supply Voltage 3
Output 3 - High Side Floating Supply Offset Voltage
3
na
none
4
VB2
High Side Floating Supply voltage 2
5
V,VS2
6
na
none
7
VB1
High Side Floating Supply voltage 1
8
U,VS1
9
na
none
10
V+
Positive Bus Input Voltage
11
na
none
12
LE1
Low Side Emitter Connection - Phase 1
13
LE2
Low Side Emitter Connection - Phase 2
14
LE3
Low Side Emitter Connection - Phase 3
15
HIN1
Logic Input High Side Gate Driver - Phase 1
16
HIN2
Logic Input High Side Gate Driver - Phase 2
17
HIN3
Logic Input High Side Gate Driver - Phase 3
18
LIN1
Logic Input Low Side Gate Driver - Phase 1
19
LIN2
Logic Input Low Side Gate Driver - Phase 2
20
LIN3
Logic Input Low Side Gate Driver - Phase 3
21
T/Itrip
22
VCC
+15V Main Supply
23
VSS
Negative Main Supply
Output 2 - High Side Floating Supply Offset Voltage
Output 1 - High Side Floating Supply Offset Voltage
Temperature Monitor and Shut-down Pin
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IRAMS06UP60A
Typical Application Connection IRAMS06UP60A
VB W
VSW
U
BOOT-STRAP
CAPACITORS
CURRENT SENSING CAN USE A
SINGLE SENSE RESISTOR OR PHASE
LEG SENSING AS SHOWN
VBV
V
3-ph AC
MOTOR
VSV
VBU
W
VSU
V+
DC BUS
CAPACITORS
LeU
PHASE LEG
CURRENT
SENSE
LeV
LeW
HINU
HINV
Driver IC
HINW
CONTROLLER
LINU
LINV
LINW
TEMP
SENSE
T/ITRIP
5k
3.3 V
1m
VDD(15 V)
6.8K
10.2k
10m
0.1
m
VSS
NTC
12k
O/C
SENSE
(ACTIVE LOW)
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and
EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance.
2. In order to provide good decoupling between VCC-Gnd and VB-VSS terminals, the capacitors shown connected between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically
0.1mF, are strongly recommended.
3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on
IR design tip DN 98-2a, application note AN-1044 or Figure 9.
4. Low inductance shunt resistors shuld be used for phase leg current sensing. Similarly, the length of the traces between pins 12, 13 and 14 to the corresponding shunt resistors should be kept as small as possible.
5. Over-current sense signal can be obtained from external hardware detecting excessive instantaneous current in
inverter.
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9
IRAMS06UP60A
Maximum RMS Output Current/Phase (A).
5.0
4.5
Tc= 100°C
Tc= 110°C
Tc= 120°C
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
2
4
6
8
10
12
14
16
18
20
Switching frequency (kHz)
Figure 3. Maximum sinusoidal phase current as function of switching frequency
V+=400V, Tj=150°C, Modulation Depth=0.8, PF=0.6
Maximum RMS Output Current/Phase (A).
4.0
12 kHz
3.5
16 kHz
3.0
20 kHz
2.5
2.0
1.5
1.0
0.5
0.0
1
10
100
Modulation frequency (Hz)
Figure 4. Maximum sinusoidal phase current as function of modulation frequency
V+=400V, Tj=150°C, Tc=100°C, Modulation Depth=0.8, PF=0.6
10
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IRAMS06UP60A
9
450
Current
Voltage
Current (A)
7
400
350
6
300
5
250
4
200
3
150
2
100
1
50
0
0
-1
0.000
0.100
0.200
0.300
0.400
0.500
0.600
0.700
0.800
0.900
Voltage (V)
8
-50
1.000
Time (µs)
Figure 5. IGBT Turn-on. Typical turn-on waveform @Tj=125°C, V+=400V
4.5
450
4
400
3.5
350
Current
Voltage
2.5
300
250
2
200
1.5
150
1
100
0.5
Voltage (V)
Current (A)
3
50
0
0
-0.5
0.000
0.100
0.200
0.300
0.400
0.500
0.600
0.700
0.800
0.900
-50
1.000
Time (µs)
Figure 6. IGBT Turn-off. Typical turn-off waveform @Tj=125°C, V+=400V
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11
IRAMS06UP60A
1000
Therimstor Resistance (kΩ) .
Maximum
Nominal
Minimum
100
10
1
0
20
40
60
80
Temperature (°C)
100
120
140
Figure 7. Variation of thermistor resistance with temperature
12
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IRAMS06UP60A
180
IGBT Junction temperature (°C)
170
160
150
140
130
120
110
Vbus=400V
Imot=3Arms
fsw=20kHz
100
90
80
60
70
80
90
100
Thermistor temperature (°C)
110
120
Figure 8. Estimated maximum IGBT junction temperature with thermistor temperature
20
17.5
Capacitance (µF)
15
15
12.5
10
7.5
6.8
4.7
5
3.3
2.5
2.2
1.5
1
0
0
5
10
Frequency (kHz)
15
20
Figure 9. Recommended minimum Bootstrap Capacitor value Vs Switching Frequency
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13
IRAMS06UP60A
Figure 11. Switching Parameter Definitions
VCE
IC
IC
VCE
90% IC
50%
HIN/LIN
90% IC
HIN/LIN
HIN/LIN
50%
HIN/LIN
10%
VCE
10% IC
10% IC
TON
TOFF
tr
Figure 11a. Input to Output propagation
turn-on delay time
tf
Figure 11b. Input to Output
propagation turn-off delay time
IF
VCE
HIN/LIN
Irr
trr
Figure 11c. Diode Reverse Recovery
14
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IRAMS06UP60A
V+
5V
Ho
Hin1,2,3
IC
Driver
U,V,W
Lo
Lin1,2,3
Figure CT1. Switching Loss Circuit
V+
1k
10k
VCC
Lin1,2,3
IN
Ho
Hin1,2,3
IC
Driver
5VZD
U,V,W
Lo
IN
PWM=4µs
Io
VP=Peak Voltage on the IGBT die
Io
Figure CT2. S.C.SOA Circuit
V+
Ho
Hin1,2,3
1k
IN
10k
VCC
IC
Driver
5VZD
Lin1,2,3
IN
U,V,W
Io
Lo
Io
VP=Peak Voltage on the IGBT die
Figure CT3. R.B.SOA Circuit
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15
IRAMS06UP60A
Package Outline
note 3
note 2
027-E2D24
IRAMS06UP60A
note 1
Standard pin leadforming option
Notes:
Dimensions in mm
1- Marking for pin 1 identification
2- Product Part Number
3- Lot and Date code marking
For mounting instruction, see AN1049
16
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IRAMS06UP60A
Package Outline
note 2
note 3
027-E2D24
IRAMS06UP60A-2
note 1
Pin leadforming option -2
Notes:
Dimensions in mm
1- Marking for pin 1 identification
2- Product Part Number
3- Lot and Date code marking
Data and Specifications are subject to change without notice
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
09/04
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