Order this document by MJE5730/D SEMICONDUCTOR TECHNICAL DATA . . . designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. • • • • 1.0 AMPERE POWER TRANSISTORS PNP SILICON 300 – 350 – 400 VOLTS 40 WATTS 300 V to 400 V (Min) — VCEO(sus) 1.0 A Rated Collector Current Popular TO–220 Plastic Package PNP Complements to the TIP47 thru TIP50 Series CASE 221A–06 TO–220AB ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ MAXIMUM RATINGS Rating Symbol MJE5730 MJE5731 MJE5731A Unit VCEO 300 350 375 Vdc Collector–Base Voltage VCB 300 350 375 Vdc Emitter–Base Voltage VEB 5.0 Vdc Collector Current — Continuous Peak IC 1.0 3.0 Adc Base Current IB 1.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 40 0.32 Watts W/_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 2.0 0.016 Watts W/_C E 20 mJ TJ, Tstg – 65 to + 150 _C Collector–Emitter Voltage Unclamped Inducting Load Energy (See Figure 10) Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 3.125 _C/W Thermal Resistance, Junction to Ambient RθJA 62.5 _C/W REV 1 Motorola, Inc. 1997 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ v v ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit 300 350 375 — — — — — — 1.0 1.0 1.0 — — — 1.0 1.0 1.0 — 1.0 mAdc 30 10 150 — — OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0) VCEO(sus) MJE5730 MJE5731 MJE5731A Collector Cutoff Current (VCE = 200 Vdc, IB = 0) (VCE = 250 Vdc, IB = 0) (VCE = 300 Vdc, IB = 0) MJE5730 MJE5731 MJE5731A Collector Cutoff Current (VCE = 300 Vdc, VBE = 0) (VCE = 350 Vdc, VBE = 0) (VCE = 400 Vdc, VBE = 0) MJE5730 MJE5731 MJE5731A Vdc ICEO mAdc ICES Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 0.3 Adc, VCE = 10 Vdc) (IC = 1.0 Adc, VCE = 10 Vdc) hFE Collector–Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc) VCE(sat) — 1.0 Vdc Base–Emitter On Voltage (IC = 1.0 Adc, VCE = 10 Vdc) VBE(on) — 1.5 Vdc Current Gain — Bandwidth Product (IC = 0.2 Adc, VCE = 10 Vdc, f = 2.0 MHz) fT 10 — MHz Small–Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 25 — — DYNAMIC CHARACTERISTICS (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%. VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) 200 hFE, DC CURRENT GAIN VCE = 10 V 100 TJ = 150°C 50 25°C 30 – 55°C 20 10 5.0 3.0 2.0 0.02 0.03 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) Figure 1. DC Current Gain 2 1.0 2.0 1.4 1.2 1 TJ = 25°C 0.8 0.6 – 55°C 0.4 0.2 150°C VCE(sat)) @ IC/IB = 5.0 0 0.02 0.03 0.05 0.2 0.3 0.1 0.5 IC, COLLECTOR CURRENT (AMPS) 1.0 Figure 2. Collector–Emitter Saturation Voltage Motorola Bipolar Power Transistor Device Data 2.0 1.4 1.0 SECOND BREAKDOWN DERATING 1.2 0.8 DERATING FACTOR TJ = – 55°C 1.0 V, VOLTAGE (V) VBE(sat) @ IC/IB = 5.0 0.8 25°C 0.6 150°C 0.4 0.6 THERMAL DERATING 0.4 0.2 0.2 0 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 0 2.0 0 25 IC, COLLECTOR CURRENT (AMPS) 150 50 75 100 125 TC, CASE TEMPERATURE (°C) 175 Figure 4. Normalized Power Derating Figure 3. Base–Emitter Voltage 10 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C. T J(pk) may be calculated from the data in Figure 6. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. IC, COLLECTOR CURRENT (AMP) 5.0 2.0 100 µs 1.0 ms 500 µs 1.0 TC = 25°C 0.5 dc 0.2 0.1 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MJE5730 MJE5731 MJE5732 0.05 0.02 0.01 5.0 v 10 20 30 50 200 300 100 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 500 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 5. Forward Bias Safe Operating Area 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 D = 0.5 0.2 0.1 0.02 0.03 0.01 0.02 P(pk) RθJC(t) = r(t) RθJC RθJC = 3.125°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) θJC(t) 0.05 t1 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.02 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 t2 50 100 200 500 1k Figure 6. Thermal Response Motorola Bipolar Power Transistor Device Data 3 TURN–ON PULSE t1 VBE(off) Vin 0V VCC t1 ≤ 7.0 ns 100 ≤ t2 < 500 µs t3 < 15 ns APPROX . –11 V RC SCOPE RB Vin t3 t2 Cjd << Ceb 51 + 4.0 V APPROX. + 9.0 V DUTY CYCLE ≈ 2.0% TURN–OFF PULSE Figure 7. Switching Time Equivalent Circuit 5.0 1.0 tr 0.5 0.3 2.0 tf td t, TIME ( µs) t, TIME ( µs) 0.2 TJ = 25°C VCC = 200 V IC/IB = 5.0 ts 3.0 TJ = 25°C VCC = 200 V IC/IB = 5.0 0.1 0.05 1.0 0.5 0.3 0.2 0.03 0.1 0.02 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) 1.0 2.0 Figure 8. Turn–On Resistive Switching Times 0.05 0.02 0.03 0.05 Voltage and Current Waveforms VCE MONITOR RBB1 = 150 Ω INPUT VOLTAGE TUT 50 100 mH + INPUT – 50 RBB2 = 100 Ω + VBB1 = 10 V – VBB2 = 0 1.0 Figure 9. Resistive Turn–Off Switching Times Test Circuit MJE171 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) RS = 0.1 Ω 0V tw ≈ 3 ms (SEE NOTE 1) –5 V 100 ms VCC = 20 V IC MONITOR 0.63 A COLLECTOR CURRENT 0 V VCER COLLECTOR VOLTAGE 10 V VCE(sat) Figure 10. Inductive Load Switching 4 Motorola Bipolar Power Transistor Device Data 2.0 PACKAGE DIMENSIONS –T– B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 BASE COLLECTOR EMITTER COLLECTOR CASE 221A–06 TO–220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. 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