SUP/SUB75P05-08 New Product Vishay Siliconix P-Channel 55-V (D-S), 175C MOSFET V(BR)DSS (V) rDS(on) () ID (A) –55 0.008 –75a TO-220AB S TO-263 G DRAIN connected to TAB G G D S D S Top View Top View D SUB75P05-08 SUP75P05-08 P-Channel MOSFET Parameter Symbol Limit Drain-Source Voltage VDS –55 Gate-Source Voltage VGS 20 ID TC = 150C –47 A Pulsed Drain Current IDM –240 Avalanche Current IAR –75 EAR 280 Repetitive Avalanche Energyb Power Dissipation L = 0.1 mH TC = 25C (TO-220AB and TO-263) TA = 125C (TO-263)c Operating Junction and Storage Temperature Range V –75a TC = 25C Continuous Drain Current (TJ = 175C) Unit mJ 250d PD TJ, Tstg W 3.7 –55 to 175 C Parameter Symbol Limit PCB Mount (TO-263)c RthJA 40 Free Air (TO-220AB) RthJA 62.5 RthJC 0.6 Junction-to-Ambient Junction-to-Case Unit C/W Notes: a. Package limited. b. Duty cycle 1%. c. When mounted on 1” square PCB (FR-4 material). d. See SOA curve for voltage derating. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70891 S-99404—Rev. B, 29-Nov-99 www.vishay.com FaxBack 408-970-5600 2-1 SUP/SUB75P05-08 New Product Vishay Siliconix Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = –250 mA –55 VGS(th) VDS = VGS, ID = –250 mA –1 –2 –3 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V VDS = –44 V, VGS = 0 V –1 Zero Gate Voltage Drain Z G V l D i Current C IDSS VDS = –44 V, VGS = 0 V, TJ = 125C –50 On-State Drain Currenta ID(on) Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V "100 VDS = –44 V, VGS = 0 V, TJ = 175C a D i S Drain-Source On-State O S Resistance R i Forward Transconductancea rDS(on) gfs VDS = –5 V, VGS = –10 V mA A –700 –120 A VGS = –10 V, ID = –30 A 0.008 VGS = –4.5 V, ID = –20 A 0.013 VGS = –10 V, ID = –30 A, TJ = 125C 0.014 VGS = –10 V, ID = –30 A, TJ = 175C 0.016 VDS = –15 V, ID = –30 A nA 75 W S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss 8500 VGS = 0 V, V VDS = –25 25 V V, f = 1 MHz MH pF F 1220 915 Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Turn-On Delay Timec td(on) 13 20 tr VDD = –30 V,, RL = 0.47 W 140 225 td(off) ID ] –75 A, VGEN = –10 V, RG = 2.5 W 115 185 175 300 Rise Timec Turn-Off Delay Timec Fall Timec 140 VDS = –30 V, VGS = –10 30 V 10 V, V ID = –75 75 A 225 nC C 30 30 tf ns Source-Drain Diode Ratings and Characteristics (TC = 25C)b Continuous Current Is –75 Pulsed Current ISM –240 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge A IF = –75 A, VGS = 0 V trr IRM(REC) Qrr IF = –75 75 A, A di/dt di/d = 100 A/ms A/ –1.1 –1.3 V 60 120 ns 2.2 3.5 A 0.176 0.21 mC Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 70891 S-99404—Rev. B, 29-Nov-99 SUP/SUB75P05-08 New Product Vishay Siliconix Output Characteristics Transfer Characteristics 250 200 VGS = 10 thru 7 V TC = –55C 6V 200 25C 160 I D – Drain Current (A) I D – Drain Current (A) 5V 150 100 4V 50 120 125C 80 40 3V 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 2 Transconductance 4 5 6 On-Resistance vs. Drain Current 0.06 TC = –55C 25C 0.05 r DS(on)– On-Resistance ( ) 90 125C 60 30 0 0.04 0.03 0.02 VGS = 4.5 V VGS = 10 V 0.01 0 0 20 40 60 80 100 0 20 40 ID – Drain Current (A) 60 80 100 120 250 300 ID – Drain Current (A) Capacitance Gate Charge 20 12000 V GS – Gate-to-Source Voltage (V) 10000 Ciss C – Capacitance (pF) 3 VGS – Gate-to-Source Voltage (V) 120 g fs – Transconductance (S) 1 8000 6000 4000 Coss 2000 VDS = 30 V ID = 75 A 16 12 8 4 Crss 0 0 0 11 22 33 44 VDS – Drain-to-Source Voltage (V) Document Number: 70891 S-99404—Rev. B, 29-Nov-99 55 0 50 100 150 200 Qg – Total Gate Charge (nC) www.vishay.com FaxBack 408-970-5600 2-3 SUP/SUB75P05-08 New Product Vishay Siliconix On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.0 100 1.6 I S – Source Current (A) r DS(on)– On-Resistance ( W ) (Normalized) VGS = 10 V ID = 30 A 1.2 0.8 TJ = 150C TJ = 25C 10 0.4 0 –50 1 –25 0 25 50 75 100 125 150 175 TJ – Junction Temperature (C) VSD – Source-to-Drain Voltage (V) Drain Source Breakdown vs. Junction Temperature Avalanche Current vs. Time 1000 70 65 ID = 250 mA IAV (A) @ TJ = 25C V(BR)DSS (V) 100 I Dav (a) 10 1 0 10 IAV (A) @ TJ = 150C 60 55 50 1 45 0.1 0.00001 0.0001 0.001 0.01 tin (Sec) www.vishay.com FaxBack 408-970-5600 2-4 0.1 1 40 –50 –25 0 25 50 75 100 125 150 175 TJ – Junction Temperature (C) Document Number: 70891 S-99404—Rev. B, 29-Nov-99 SUP/SUB75P05-08 New Product Vishay Siliconix Maximum Avalanche and Drain Current vs. Case Temperature 100 I D – Drain Current (A) I D – Drain Current (A) 75 60 45 30 10 ms Limited by rDS(on) 100 ms 1 ms 10 10 ms TC = 25C Single Pulse 15 0 100 ms dc 1 0 25 50 75 100 125 150 175 0.1 10 100 Normalized Thermal Transient Impedance, Junction-to-Case 2 1 1 VDS – Drain-to-Source Voltage (V) TC – Case Temperature (C) Normalized Effective Transient Thermal Impedance Safe Operating Area 500 90 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–5 10–4 10–3 10–2 10–1 1 3 Square Wave Pulse Duration (sec) Document Number: 70891 S-99404—Rev. B, 29-Nov-99 www.vishay.com FaxBack 408-970-5600 2-5