NEW PRODUCT NEW PRODUCT NEW PRODUCT UGB8AT THRU UGB8DT ULTRAFAST EFFICIENT PLASTIC RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 8.0 Amperes TO-263AB FEATURES 0.160 (4.06) 0.190 (4.83) 0.380 (9.65) 0.420 (10.67) 0.045 (1.14) 0.245 (6.22) MIN 0.055 (1.40) K 0.047 (1.19) 0.055 (1.40) 0.320 (8.13) 0.575 (14.60) 0.360 (9.14) 1 SEATING PLATE K 0.625 (15.88) 2 0.090 (2.29) 0.110 (2.79) -T- 0.018 (0.46) 0.095 (2.41) 0.025 (0.64) 0.100 (2.54) ♦ Plastic package has Underwriters Laboratories Flammability Classification 94V-0 ♦ Ideally suited for use in very high frequency switching power supplies, inverters and as a free wheeling diode ♦ Ultrafast reverse recovery time for high efficiency ♦ Soft recovery characteristics ♦ Excellent high temperature switching ♦ Glass passivated chip junction ♦ High temperature soldering in accordance with CECC 802 / Reflow guaranteed 0.080 (2.03) 0.027 (0.686) MECHANICAL DATA 0.110 (2.79) 0.037 (0.940) PIN 1 K - HEATSINK PIN 2 Dimensions in inches and (millimeters) Case: JEDEC TO-263AB molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting Position: Any Weight: 0.08 ounce, 2.24 grams MAXIMUM RATINGS AND CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. SYMBOLS UGB8AT UGB8BT UGB8CT UGB8DT UNITS Maximum repetitive peak reverse voltage VRRM 50 100 150 200 Volts Maximum RMS voltage VRMS 35 70 105 140 Volts Maximum DC blocking voltage VDC 50 100 150 200 Volts Maximum average forward rectified current at TC=100°C I(AV) 8.0 Amps Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) at TC=100°C IFSM 150.0 Amps Maximum instantaneous forward voltage at: 8.0 20A 5.0A, TJ=150°C Maximum DC reverse current at rated DC blocking voltage TC=25°C TC=100°C Maximum reverse recovery time (NOTE 1) Maximum reverse recovery time (NOTE 2) Maximum recovered stored charge (NOTE 2) VF Volts IR 10.0 300.0 µA trr 20.0 ns TJ=25°C TJ=100°C trr 30.0 50.0 ns TJ=25°C TJ=100°C Qrr 20.0 45.0 nC CJ 45.0 pF RΘJC 4.0 °C/W TJ, TSTG -55 to+150 °C Typical junction capacitance (NOTE 3) Typical thermal resistance (NOTE 4) Operating junction and storage temperature range NOTES: (1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A (2) Trr and Qrr measured at IF=8.0A, VR=30V, di/dt=50A/µs, Irr=10% IRM for meaurement of trr (3) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts (4) Thermal resistance from junction to case 10/27/98 1.00 1.20 0.95 FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG. 1 - FORWARD CURRENT DERATING CURVE 12 1,000 RESISTIVE OR INDUCTIVE LOAD TC=100°C 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES RATINGS AND CHARACTERISTIC CURVES UGB8AT THRU UGB8DT 10 8.0 6.0 4.0 2.0 0 0 25 50 75 100 125 150 100 175 10 CASE TEMPERATURE, °C 100 10 1 FIG. 3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT, AMPERES 100 TJ=25°C PULSE WIDTH=300µs 1% DUTY CYCLE 10 1 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 INSTANTANEOUS REVERSE LEAKAGE CURRENT, MICROAMPERES NUMBER OF CYCLES AT 60 Hz FIG. 4 - TYPICAL REVERSE CHARACTERISTICS 1,000 TJ=125°C 100 TJ=100°C 10 1 TJ=25°C 0.1 0.01 0 IF=4.0A VR=30V 100 di/dt= 150A/µs di/dt=100A/µs 50 di/dt=20A/µs 40 di/dt=50A/µs di/dt=100A/µs di/dt=50A/µs di/dt=150A/µs 30 20 di/dt=20A/µs 10 trr Qrr 0 0 25 50 75 100 125 150 JUNCTION TEMPERATURE, °C 40 60 80 100 FIG. 6 - TYPICAL JUNCTION CAPACITANCE 175 JUNCTION CAPACITANCE, pF RECOVERED STORED CHARGE/REVERSE RECOVERY TIME nC/ns FIG. 5 - REVERSE SWITCHING CHARACTERISTICS 60 20 PERCENT OF RATED PEAK REVERSE VOLTAGE, % INSTANTANEOUS FORWARD VOLTAGE, VOLTS TJ=25°C f=1.0 MHZ Vsig=50mVp-p 10 1 0.1 0.01 10 1 0.1 REVERSE VOLTAGE, VOLTS 100