PHILIPS BUK100-50GL

Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
DESCRIPTION
Monolithic temperature and
overload protected logic level power
MOSFET in a 3 pin plastic
envelope, intended as a general
purpose switch for automotive
systems and other applications.
APPLICATIONS
BUK100-50GL
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX.
UNIT
VDS
ID
PD
Tj
RDS(ON)
Continuous drain source voltage
Continuous drain current
Total power dissipation
Continuous junction temperature
Drain-source on-state resistance
VIS = 5 V
50
13.5
40
150
125
V
A
W
˚C
mΩ
General controller for driving
lamps
motors
solenoids
heaters
FEATURES
Vertical power DMOS output
stage
Low on-state resistance
Overload protection against
over temperature
Overload protection against
short circuit load
Latched overload protection
reset by input
5 V logic compatible input level
Control of power MOSFET
and supply of overload
protection circuits
derived from input
Low operating input current
ESD protection on input pin
Overvoltage clamping for turn
off of inductive loads
FUNCTIONAL BLOCK DIAGRAM
DRAIN
O/V
CLAMP
POWER
INPUT
MOSFET
RIG
LOGIC AND
PROTECTION
SOURCE
Fig.1. Elements of the TOPFET.
PINNING - TO220AB
PIN
DESCRIPTION
1
input
2
drain
3
source
tab
PIN CONFIGURATION
D
tab
TOPFET
I
drain
1 23
November 1996
SYMBOL
1
P
S
Rev 1.300
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK100-50GL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VDSS
VIS = 0 V
VIS
ID
ID
IDRM
PD
Tstg
Tj
Continuous off-state drain source
voltage1
Continuous input voltage
Continuous drain current
Continuous drain current
Repetitive peak on-state drain current
Total power dissipation
Storage temperature
Continuous junction temperature2
Tmb ≤ 25 ˚C; VIS = 5 V
Tmb ≤ 100 ˚C; VIS = 5 V
Tmb ≤ 25 ˚C; VIS = 5 V
Tmb ≤ 25 ˚C
normal operation
Tsold
Lead temperature
during soldering
MIN.
MAX.
UNIT
-
50
V
0
-55
-
6
13.5
8.5
54
40
150
150
V
A
A
A
W
˚C
˚C
-
250
˚C
OVERLOAD PROTECTION LIMITING VALUES
With the protection supply provided via the input pin, TOPFET can protect itself from two types of overload.
SYMBOL
VISP
PARAMETER
CONDITIONS
3
Protection supply voltage
for valid protection
MIN.
MAX.
UNIT
4
-
V
Over temperature protection
VDDP(T)
Protected drain source supply voltage VIS = 5 V
-
50
V
VDDP(P)
PDSM
Short circuit load protection
Protected drain source supply voltage4 VIS = 5 V
Instantaneous overload dissipation
Tmb = 25 ˚C
-
35
0.6
V
kW
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL
PARAMETER
CONDITIONS
IDROM
EDSM
Repetitive peak clamping current
Non-repetitive clamping energy
EDRM
Repetitive clamping energy
VIS = 0 V
Tmb ≤ 25 ˚C; IDM = 15 A;
VDD ≤ 20 V; inductive load
Tmb ≤ 95 ˚C; IDM = 4 A;
VDD ≤ 20 V; f = 250 Hz
MIN.
MAX.
UNIT
-
15
200
A
mJ
-
20
mJ
MIN.
MAX.
UNIT
-
2
kV
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
VC
Electrostatic discharge capacitor
voltage
Human body model;
C = 250 pF; R = 1.5 kΩ
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch.
3 The input voltage for which the overload protection circuits are functional.
4 The device is able to self-protect against a short circuit load providing the drain-source supply voltage does not exceed VDDP(P) maximum.
For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS.
November 1996
2
Rev 1.300
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK100-50GL
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
-
2.5
3.1
K/W
-
60
-
K/W
MIN.
TYP.
MAX.
UNIT
50
-
-
V
-
-
70
V
-
0.5
1
10
85
10
20
100
125
µA
µA
µA
mΩ
Thermal resistance
Rth j-mb
Junction to mounting base
Rth j-a
Junction to ambient
in free air
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(CL)DSS
Drain-source clamping voltage
VIS = 0 V; ID = 10 mA
V(CL)DSS
Drain-source clamping voltage
IDSS
IDSS
IDSS
RDS(ON)
VIS = 0 V; IDM = 1 A; tp ≤ 300 µs;
δ ≤ 0.01
Zero input voltage drain current VDS = 12 V; VIS = 0 V
Zero input voltage drain current VDS = 50 V; VIS = 0 V
Zero input voltage drain current VDS = 40 V; VIS = 0 V; Tj = 125 ˚C
Drain-source on-state
VIS = 5 V; IDM = 7.5 A; tp ≤ 300 µs;
resistance
δ ≤ 0.01
OVERLOAD PROTECTION CHARACTERISTICS
TOPFET switches off when one of the overload thresholds is reached. It remains latched off until reset by the input.
SYMBOL
PARAMETER
CONDITIONS
1
Tmb = 25 ˚C; L ≤ 10 µH
VDD = 13 V; VIS = 5 V
VDD = 13 V; VIS = 5 V
EDS(TO)
td sc
Short circuit load protection
Overload threshold energy
Response time
Tj(TO)
Over temperature protection
Threshold junction temperature VIS = 5 V; from ID ≥ 1 A2
MIN.
TYP.
MAX.
UNIT
-
0.2
0.8
-
J
ms
150
-
-
˚C
INPUT CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified. The supply for the logic and overload protection is taken from the input.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VIS(TO)
IIS
VISR
Input threshold voltage
Input supply current
Protection reset voltage3
VDS = 5 V; ID = 1 mA
VIS = 5 V; normal operation
1.0
2.0
1.5
0.2
2.6
2.0
0.35
3.5
V
mA
V
VISR
Protection reset voltage
Tj = 150 ˚C
1.0
-
-
IISL
V(BR)IS
RIG
Input supply current
Input clamp voltage
Input series resistance
VIS = 5 V; protection latched
II = 10 mA
to gate of power MOSFET
0.5
6
-
1.2
4
2.0
-
mA
V
kΩ
1 The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for
PDSM, which is always the case when VDS is less than VDSP maximum. Refer to OVERLOAD PROTECTION LIMITING VALUES.
2 The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum ID
ensures this condition.
3 The input voltage below which the overload protection circuits will be reset.
November 1996
3
Rev 1.300
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK100-50GL
TRANSFER CHARACTERISTICS
Tmb = 25 ˚C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
gfs
Forward transconductance
VDS = 10 V; IDM = 7.5 A tp ≤ 300 µs;
δ ≤ 0.01
5
9
-
S
ID(SC)
Drain current1
VDS = 13 V; VIS = 5 V
-
25
-
A
MIN.
TYP.
MAX.
UNIT
SWITCHING CHARACTERISTICS
Tmb = 25 ˚C. RI = 50 Ω . Refer to waveform figures and test circuits.
SYMBOL
PARAMETER
CONDITIONS
td on
Turn-on delay time
VDD = 13 V; VIS = 5 V
-
1.5
-
µs
tr
Rise time
resistive load RL = 4 Ω
-
8
-
µs
td off
Turn-off delay time
VDD = 13 V; VIS = 0 V
-
6
-
µs
tf
Fall time
resistive load RL = 4 Ω
-
4.5
-
µs
td on
Turn-on delay time
VDD = 13 V; VIS = 5 V
-
1.5
-
µs
tr
Rise time
inductive load IDM = 3 A
-
1
-
µs
td off
Turn-off delay time
VDD = 13 V; VIS = 0 V
-
10
-
µs
tf
Fall time
inductive load IDM = 3 A
-
0.5
-
µs
REVERSE DIODE LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
IS
Continuous forward current
Tmb ≤ 25 ˚C; VIS = 0 V
MIN.
MAX.
UNIT
-
13.5
A
REVERSE DIODE CHARACTERISTICS
Tmb = 25 ˚C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VSDS
Forward voltage
IS = 15 A; VIS = 0 V; tp = 300 µs
-
1.0
1.5
V
trr
Reverse recovery time
not applicable2
-
-
-
-
MIN.
TYP.
MAX.
UNIT
-
3.5
-
nH
-
4.5
-
nH
-
7.5
-
nH
ENVELOPE CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Ld
Internal drain inductance
Ld
Internal drain inductance
Ls
Internal source inductance
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
1 During overload before short circuit load protection operates.
2 The reverse diode of this type is not intended for applications requiring fast reverse recovery.
November 1996
4
Rev 1.300
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
120
BUK100-50GL
Normalised Power Derating
PD%
BUK100-50GL
Zth / (K/W)
10
110
100
90
D=
0.5
80
1
70
0.2
60
50
0.05
0.1
40
0.1
0.02
20
10
0
20
40
60
80
100
Tmb / C
120
tp
T
1E-05
1E-03
t/s
1E-01
1E+01
Fig.5. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
Normalised Current Derating
ID%
t
T
0.01
1E-07
140
Fig.2. Normalised limiting power dissipation.
PD% = 100⋅PD/PD(25 ˚C) = f(Tmb)
40
110
ID / A
BUK100-50GL
VIS / V =
35
100
90
30
80
6
5.5
25
70
60
50
5
20
4.5
15
40
30
10
20
10
5
4
3.5
3
0
0
20
40
60
80
Tmb / C
100
120
ID & IDM / A
0
=V
8
12
16
VDS / V
20
ID / A
40
tp =
D
N)
4
24
28
BUK100-50GL
VIS / V =
35
10 us
O
S(
32
Fig.6. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VIS; tp = 250 µs & tp < td sc
BUK100-50GL
D
S/I
2.5
0
140
Fig.3. Normalised continuous drain current.
ID% = 100⋅ID/ID(25 ˚C) = f(Tmb); conditions: VIS = 5 V
100
D=
0
0
120
tp
PD
30
6
5.5
RD
30
10
5
100 us
DC
1
25
4.5
1 ms
20
10 ms
15
4
100 ms
3.5
10
3
5
Overload protection characteristics not shown
0.1
0
1
10
100
0
VDS / V
2
3
4
5
VDS / V
Fig.4. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
November 1996
1
Fig.7. Typical on-state characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VIS; tp = 250 µs
5
Rev 1.300
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK100-50GL
RDS(ON) / Ohm
0.20
VIS / V =
a
BUK100-50GL
3.5
4
4.5
Normalised RDS(ON) = f(Tj)
5
5.5
1.5
6
0.15
1.0
0.10
0.5
0.05
0
0
5
15
10
20
25
30
0
35
-60 -40 -20
0
20
ID / A
ID / A
80
100 120 140
Fig.11. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 7.5 A; VIS = 5 V
Fig.8. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VIS; tp = 250 µs
40
40 60
Tj / C
BUK100-50GL
td sc / ms
100
BUK100-50GL
35
30
10
25
20
PDSM
15
1
10
5
0
0.1
0
2
4
VIS / V
6
8
Fig.9. Typical transfer characteristics, Tj = 25 ˚C.
ID = f(VIS) ; conditions: VDS = 10 V; tp = 250 µs
12
gfs / S
0.1
PDS / kW
0.01
1
Fig.12. Typical overload protection characteristics.
td sc = f(PDS); conditions: VIS ≥ 4 V; Tj = 25 ˚C.
PDSM%
BUK100-50GL
120
11
10
100
9
8
80
7
6
60
5
4
40
3
2
20
1
0
0
0
10
20
30
40
50
-60
ID / A
Fig.10. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 10 V; tp = 250 µs
November 1996
-40
-20
0
20
40
60
Tmb / C
80
100
120
140
Fig.13. Normalised limiting overload dissipation.
PDSM% =100⋅PDSM/PDSM(25 ˚C) = f(Tmb)
6
Rev 1.300
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK100-50GL
BUK100-50GL
Energy & Time
1
IIS / uA
500
BUK100-50GL
400
Time / ms
300
0.5
25 C
200
Tj(TO)
Energy / J
100
150 C
0
-60
-20
20
60
100
Tmb / C
140
180
0
220
0
4
6
8
10
VIS / V
Fig.17. Typical DC input characteristics.
IIS = f(VIS); normal operation, parameter: Tj
Fig.14. Typical overload protection characteristics.
Conditions: VDD = 13 V; VIS = 5 V; SC load = 30 mΩ
20
2
ID / A
BUK100-50GL
IISL / mA
3
BUK100-50GL
PROTECTION LATCHED
15
2
typ.
10
RESET
1
5
NORMAL
0
0
50
60
VDS / V
70
0
Fig.15. Typical clamping characteristics, 25 ˚C.
ID = f(VDS); conditions: VIS = 0 V; tp ≤ 50 µs
4
VIS / V
6
8
Fig.18. Typical DC input characteristics, Tj = 25 ˚C.
IISL = f(VIS); overload protection operated ⇒ ID = 0 A
VIS(TO) / V
60
max.
2
2
IS / A
BUK100-50GL
50
40
typ.
30
min.
1
20
10
0
0
-60
-40
-20
0
20
40
60
Tj / C
80
100
0
120 140
Fig.16. Input threshold voltage.
VIS(TO) = f(Tj); conditions: ID = 1 mA; VDS = 5 V
November 1996
0.2
0.4
0.6
0.8
VSD / V
1
1.2
1.4
Fig.19. Typical reverse diode current, Tj = 25 ˚C.
IS = f(VSDS); conditions: VIS = 0 V; tp = 250 µs
7
Rev 1.300
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK100-50GL
VDD
VDD = VCL
RL
LD
t p : adjust for correct ID
TOPFET
I
P
D
TOPFET
I
D.U.T.
P
RI
D
D.U.T.
RI
VIS
VIS
S
ID measure
S
ID measure
0V
0V
0R1
0R1
Fig.23. Test circuit for inductive load switching times.
Fig.20. Test circuit for resistive load switching times.
RESISTIVE TURN-ON
BUK100-50GL
BUK100-50GL
INDUCTIVE TURN-ON
VDS / V
VDS / V
10
10
td on
tr
td on
tr
VIS / V
VIS / V
5
5
ID / A
ID / A
90%
90%
10%
10%
10%
0
0
10%
0
10
time / us
20
0
20
Fig.24. Typical switching waveforms, inductive load.
VDD = 13 V; ID = 3 A; RI = 50 Ω, Tj = 25 ˚C.
Fig.21. Typical switching waveforms, resistive load.
VDD = 13 V; RL = 4 Ω; RI = 50 Ω, Tj = 25 ˚C.
BUK100-50GL
RESISTIVE TURN-OFF
10
time / us
15
BUK100-50GL
INDUCTIVE TURN-OFF
VDS / V
10
VDS / V
td off
10
td off
tf
VIS / V
tf
VIS / V
5
90%
90%
5
ID / A
90%
90%
ID / A
10%
10%
0
0
0
10
time / us
0
20
Fig.22. Typical switching waveforms, resistive load.
VDD = 13 V; RL = 4 Ω; RI = 50 Ω, Tj = 25 ˚C.
November 1996
10
time / us
20
Fig.25. Typical switching waveforms, inductive load.
VDD = 13 V; ID = 3 A; RI = 50 Ω, Tj = 25 ˚C.
8
Rev 1.300
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK100-50GL
Iiso normalised to 25 C
EDSM%
120
110
100
1.5
90
80
70
60
50
1
40
30
20
10
0
0.5
0
20
40
60
80
Tmb / C
100
120
140
-60
Fig.26. Normalised limiting clamping energy.
EDSM% = f(Tmb); conditions: ID = 15 A; VIS = 5 V
-20
20
60
Tj / C
100
140
180
Fig.29. Normalised input current (normal operation).
IIS/IIS25 ˚C = f(Tj); VIS = 5 V
V(CL)DSS
Iisl normalised to 25 C
VDS
VDD
+
0
VDD
1.5
L
ID
VDS
0
-
D
VIS
TOPFET
0
I
-ID/100
1
D.U.T.
P
Schottky
RIS
S
R 01
shunt
0.5
-60
Fig.27. Clamping energy test circuit, RIS = 50 Ω.
EDSM = 0.5 ⋅ LID2 ⋅ V(CL)DSS /(V(CL)DSS − VDD )
1 mA
-20
20
60
Tj / C
100
140
180
Fig.30. Normalised input current (protection latched).
IISL/IISL25 ˚C = f(Tj); VIS = 5 V
Idss
100 uA
10 uA
typ.
1 uA
100 nA
0
20
40
60
80
Tj / C
100
120
140
Fig.28. Typical off-state leakage current.
IDSS = f(Tj); Conditions: VDS = 40 V; IIS = 0 V.
November 1996
9
Rev 1.300
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK100-50GL
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max 1 2 3
(2x)
0,9 max (3x)
2,54 2,54
0,6
2,4
Fig.31. TO220AB; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
November 1996
10
Rev 1.300
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK100-50GL
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
November 1996
11
Rev 1.300