PD - 93955A
LOGIC LEVEL
HEXFET® POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRL5NJ024
55V, N-CHANNEL
Product Summary
Part Number
IRL5NJ024
RDS(on)
0.06Ω
BVDSS
55V
ID
17A
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse
circuits.
SMD-0.5
Features:
n
n
n
n
n
n
n
n
n
Logic Level Gate Drive
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
Units
17
11
68
35
0.28
±16
56
11
3.5
4.3
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (for 5 s)
2.6
g
For footnotes refer to the last page
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1
7/13/01
IRL5NJ024
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Min.
55
–––
–––
–––
–––
1.0
6.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Ciss
Input Capacitanc
–––
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = 250µA
0.057 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.060
VGS = 10V, ID = 11A
––– 0.075
Ω
VGS = 5.0V, ID = 11A
––– 0.105
VGS = 4.0V, ID = 9.0A
––– 2.0
V
VDS = VGS, ID = 250µA
––– –––
S
VDS = 25V, ID = 11 A
––– 25
VDS = 55V, VGS = 0V
µA
––– 250
VDS = 44V, VGS = 0V, TJ = 125°C
––– 100
VGS = 16V
nA
––– -100
VGS = -16V
––– 15
ID = 11A
––– 3.7
nC VDS = 44V
––– 8.5
VGS = 5.0V
––– 11
VDD = 28V
––– 133
ID = 11A
ns
––– 35
RG = 12 Ω
––– 66
VGS = 5.0V
4.0 ––– nH
Measured from the center of
drain pad to center of source pad
514 –––
VGS = 0V, VDS = 25V
Coss
Output Capacitance
–––
137
–––
Crss
Reverse Transfer Capacitance
–––
51
–––
V(BR)DSS
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
pF
ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
—
—
—
—
17
68
A
VSD
t rr
Q RR
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.3
90
200
V
nS
nC
ton
Forward Turn-On Time
Test Conditions
Tj = 25°C, IS = 11A, VGS = 0V ➃
Tj = 25°C, IF = 11A, di/dt ≤ 100A/µs
VDD ≤ 25V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
—
—
3.57
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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IRL5NJ024
1000
100
VGS
15V
12V
10V
7.0V
5.0V
4.5V
2.7V
BOTTOM 2.0V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
100
10
1
2.0V
0.1
20µs PULSE WIDTH
T = 25 C
°
J
0.01
0.1
1
10
10
0.1
2.0
15
25V
V DS = 50V
20µs PULSE WIDTH
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
1
10
100
Fig 2. Typical Output Characteristics
2.5
10
°
J
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
TJ = 150 ° C
20µs PULSE WIDTH
T = 150 C
0.1
0.1
100
TJ = 25 ° C
2.0V
1
VDS , Drain-to-Source Voltage (V)
100
VGS
15V
12V
10V
7.0V
5.0V
4.5V
2.7V
BOTTOM 2.0V
TOP
TOP
ID = 17A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRL5NJ024
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
800
600
Ciss
400
Coss
200
C
rss
12
VGS , Gate-to-Source Voltage (V)
1000
1
10
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 13
10
0
100
4
8
12
16
20
24
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
ID , Drain-to-Source Current (A)
100
ISD , Reverse Drain Current (A)
VDS = 44V
VDS = 27V
VDS = 11V
0
0
TJ = 150 ° C
TJ = 25 ° C
1
V GS = 0 V
0.6
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
10
0.1
0.2
1.0
1.4
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
ID = 11A
1.8
10
100µs
1ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
10ms
0.1
1
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRL5NJ024
20
RD
VDS
I D , Drain Current (A)
VGS
D.U.T.
15
RG
10
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+
-VDD
VGS
Fig 10a. Switching Time Test Circuit
5
VDS
90%
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50
0.20
0.10
1
P DM
0.05
0.02
0.01
0.1
0.00001
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRL5NJ024
15V
L
VDS
D .U .T.
RG
IA S
VGS
20V
D R IV E R
+
- VD D
0 .01 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
EAS , Single Pulse Avalanche Energy (mJ)
100
TOP
80
BOTTOM
ID
5.0A
7.0A
11A
60
40
20
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( ° C)
V (B R )D S S
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
5.0V
QGS
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
D.U.T.
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRL5NJ024
Footnotes:
Repetitive Rating; Pulse width limited by
ISD ≤ 11A, di/dt ≤ 230 A/µs,
maximum junction temperature.
VDD = 25 V, Starting TJ = 25°C, L=0.9mH
Peak IAS =11A, VGS = 5.0 V, RG= 25Ω
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
VDD ≤ 55V, TJ ≤ 150°C
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 07/01
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