SD57030 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W WITH 13 dB gain @ 945 MHz • BeO FREE PACKAGE M243 (Epoxy Sealed) DESCRIPTION The SD57030 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57030 is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity. ORDER CODE SD57030 BRANDING TSD57030 PIN CONNECTION 1 3 2 1. Drain 2. Gate 3. Source ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Symbol V(BR)DSS VDGR VGS ID PDISS Tj TSTG Parameter Value Unit Drain-Source Voltage 65 V Drain-Gate Voltage (RGS = 1 MΩ) 65 V + 20 V Drain Current 4 A Power Dissipation (@ Tc = 70°C) 74 W Max. Operating Junction Temperature 200 °C -65 to + 200 °C 1.75 °C/W Gate-Source Voltage Storage Temperature THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance March, 24 2003 1/7 SD57030 ELECTRICAL SPECIFICATION (TCASE = 25°C) STATIC Symbol Test Conditions Min. Typ. Max. Unit V(BR)DSS VGS = 0 V IDS = 10 mA IDSS VGS = 0 V VDS = 28 V 1 µA IGSS VGS = 20 V VDS = 0 V 1 µA VGS(Q) VDS = 28 V ID = 50 mA 5.0 V VDS(ON) VGS = 10 V ID = 3 A 65 V 2.0 1.3 V GFS VDS = 10 V ID = 3 A 1.8 mho CISS* VGS = 0 V VDS = 28 V f = 1 MHz 58 pF COSS VGS = 0 V VDS = 28 V f = 1 MHz 34 pF CRSS VGS = 0 V VDS = 28 V f = 1 MHz 2.7 pF Ref. 7143417B DYNAMIC Symbol VDD = 28 V IDQ = 50 mA GPS VDD = 28 V IDQ = 50 mA ηD VDD = 28 V Load mismatch 2/7 Test Conditions POUT Min. Typ. Max. Unit f = 945 MHz 30 POUT = 30 W f = 945 MHz 13 15 dB IDQ = 50 mA POUT = 30 W f = 945 MHz 50 60 % VDD = 28 V IDQ = 50 mA ALL PHASE ANGLES POUT = 28 W f = 945 MHz 10:1 W VSWR SD57030 TYPICAL PERFORMANCE (CW) Output Power vs. Input Power Power Gain and Efficiency vs. Output Power 30 20 10 f= 945 MHz Vdd= 28 V Idq= 50 mA 70 Gain 18 50 12 40 9 30 6 20 f= 945 MHz Vdd= 28 V Idq= 50 mA 3 10 0 0 0 0.2 0.4 0.6 0.8 1 1.2 0 0 1.4 5 10 15 20 25 30 Pout, OUTPUT POWER (W) Pin, INPUT POW ER (W ) Output Power vs. Gate Source Voltage 35 40 Output Power vs. Supply Voltage 35 35 f= 945 MHz Vdd= 28 V Idq= 50 mA 30 Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) 60 Eff 15 Nd, DRAIN EFFICIENCY (%) 21 Gp, POWER GAIN (dB) Pout, OUTPUT POWER (W) 40 25 20 15 10 5 0 Pin= .84 W f= 945 MHz Idq= 50 mA 30 25 Pin= .47 W 20 15 Pin= .24 W 10 5 0 -5 -4 -3 -2 -1 0 1 Vgs, GATE-SOURCE VOLTAGE (V) 2 3 4 8 12 16 20 24 28 32 VDD, SUPPLY VOLTAGE (V) 3/7 SD57030 TEST CIRCUIT SCHEMATIC VGG + + + + RF IN VD D RF OUT NOTES: 1. DIMENSIONS AT COMPONENT SYMBOLS ARE REFERENCE FOR COMPONENT PLACEMENT. 2. GAP BETWEEN GROUND & TRANSMISSION LINE = 0.056 [1.42] +0.002 [0.05] -0.000 [0.00] TYP. 3. DIMENSIONS OF INPUT AND OUTPUT COMPONENT FROM EDGE OF TRANSMISSION LINES. TEST CIRCUIT COMPONENT PART LIST COMPONENT C19 C18, C14 C17 C16, C12, C11,C1 C15 C13 C9, C2 C8 C7, C6, C5 ,C4 C3 R3 R2 R1 FB2, FB1 L2, L1 PCB 4/7 DESCRIPTION 200 µF / 63V ALLUMINIUM ELECTROLYTIC RADIAL LEAD CAPACITOR 0.1 µF / 500V SURFACE MOUNT CERAMIC CHIP CAPACITOR 100 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 47 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 10 µF / 50V ALUMINIUM ELECTROLYTIC RADIAL LEAD CAPACITOR 100 pF ATC 700B SURFACE MOUNT CERAMIC CHIP CAPACITOR 0.8-8.0 pF GIGA TRIM VARIABLE CAPACITOR 6.2 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 10 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 3 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 120 0-IM, 2W SURFACE MOUNT CERAMIC CHIP CAPACITOR 4.7 M OHM 1W SURFACE MOUNT CERAMIC CHIP CAPACITOR 18 K OHM, 1W SURFACE MOUNT CERAMIC CHIP CAPACITOR SHIELD BEAD SURFACE MOUNT EMI INDUCTOR, 5 TURNS AIR WOUND #22AWG, ID=0.059[1.49], NYLON COATED MAGNET WIRE WOVEN FIBERGLASS REINFORCED PTFE 0.080’’ THK, εr=2.55, 2 Oz EDCu BOTH SIDE SD57030 TEST CIRCUIT SD57030 4 inches TEST CIRCUIT PHOTOMASTER SD57030 6.4 inches 5/7 SD57030 M243 (.230 x .360 2L N/HERM W/FLG) MECHANICAL DATA mm DIM. MIN. MAX MIN. TYP. MAX A 5.21 5.72 0.205 0.225 B 5.46 6.48 0.215 0.255 C 5.59 6.10 0.220 0.240 D 14.27 0.562 E 20.07 20.57 0.790 0.810 F 8.89 9.40 0.350 0.370 G 0.10 0.15 0.004 0.006 H 3.18 4.45 0.125 0.175 I 1.83 2.24 0.072 0.088 J 1.27 1.78 0.050 0.070 Controlling dimension: Inches 6/7 TYP. Inch 1022142E SD57030 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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