Order this document by TPV597/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed for 1.0 watt stages in Band V TV transposer amplifiers. Gold metallized dice and diffused emitter ballast resistors are used to enhance reliability, ruggedness and linearity. • Band IV and V (470– 860 MHz) • 1.0 W — Pref @ – 58 dB IMD • 20 V — VCC 1.0 W, 470 – 860 MHz UHF LINEAR POWER TRANSISTOR • High Gain — 11 dB Typ, Class A @ f = 860 MHz • Gold Metallization for Reliability MAXIMUM RATINGS Symbol Value Unit Collector–Emitter Voltage Rating VCEO 24 Vdc Collector–Base Voltage VCBO 45 Vdc Emitter–Base Voltage VEBO 3.5 Vdc Collector Current — Continuous IC 1.4 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 19 0.11 Watts W/°C Operating Junction Temperature TJ 200 °C Tstg – 65 to + 200 °C Storage Temperature Range CASE 244–04, STYLE 1 (.280 SOE) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RθJC 9.0 °C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 40 mA, IB = 0) V(BR)CEO 24 — — Vdc Collector–Base Breakdown Voltage (IC = 2.0 mA, IE = 0) V(BR)CBO 45 — — Vdc Emitter–Base Breakdown Voltage (IE = 4.0 mA, IC = 0) V(BR)EBO 3.5 — — Vdc OFF CHARACTERISTICS Emitter–Base Leakage Current (VEB = 2.0 V) IEBO — — 0.5 mA V(BR)CER 50 — — Vdc ICBO — — 1.2 mAdc hFE 15 — 120 — Cob — — 7.0 pF Common–Emitter Amplifier Power Gain (VCE = 20 V, Pout = 1.0 W, f = 860 MHz, IE = 0.44 A) GPE 10.5 11 — dB Load Mismatch (VCE = 20 V, Pout = 2.0 W, IE = 0.44 A, f = 860 MHz, Load VSWR = ∞:1, All Phase Angles) ψ Collector–Emitter Breakdown Voltage (IC = 40 mA, RBE = 10 Ω) Collector Cutoff Current (VCB = 30 V, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 200 mA, VCE = 5.0 V) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 V, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS No Degradation in Output Power (continued) RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 TPV597 1 ELECTRICAL CHARACTERISTICS — continued Characteristic Symbol Min Typ Max Unit IMD1 — – 60 – 58 dB fτ 2.2 2.5 — GHz IMD2 — — – 51 dB FUNCTIONAL TESTS (continued) Intermodulation Distortion, 3 Tone (f = 860 MHz, VCE = 20 V, IE = 0.44 A, Pref = 1.0 W, Vision Carrier = – 8.0 dB, Sound Carrier = –7.0 dB, Sideband Signal = –16 dB, Specification TV05001) Cutoff Frequency (VCE = 20 V, IE = 0.44 A) Intermodulation Distortion (IDEM) (f = 860 MHz, VCE = 20 V, IE = 0.44 A, Pref = 2.0 W, Vision Carrier = – 8.0 dB, Sound Carrier = –10 dB, Sideband Signal = –16 dB) 0.2 Pout , OUTPUT POWER (WATTS) 6 f = 860 MHz VCE = 20 V IC = 440 mA 5 0.5 Zin 0.4 f = 1 GHz 0.9 IDEAL 0.6 4 3 REAL ZOL* 0.8 2 ā 0 0.8 0.1 0.2 f = 1 GHz 0.4 0.2 0.6 0.4 0.8 0.7 0.6 0.8 0.6 0.5 0.8 Zo = 50 Ω 1 1 1 1.5 1 2 1.5 40 80 120 160 200 240 280 Pin, INPUT POWER (mW) 1.5 3 320 4 5 2 2 10 Figure 1. Power Output versus Power Input 3 3 4 5 10 0 5 10 4 Figure 2. Large Signal Impedances VCE = 20 V — IC = 440 mA ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency. 1 MTTF FACTOR (106 HRS x AMP2 ) IC, COLLECTOR CURRENT (A) 2 1.6 THEATSINK = 70°C 1.2 0.8 0.4 0.1 NOTE: DIVIDE MTTF FACTORY BY IC2 TO OBTAIN METAL LIFE 0.01 0.001 0 TPV597 2 5 10 15 20 25 30 80 100 120 140 160 180 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 3. Safe Operating Area Figure 4. MTTF Factor versus Junction Temperature 200 MOTOROLA RF DEVICE DATA VBIAS VCE L C C C 220 pF 7% λ g 2% λ g L 50 Ω 50 Ω 50 Ω 50 Ω 10% λ g 220 pF 220 pF 0.8 – 10 pF 0.8 – 15 pF L = 6 turns ID = 1 mm Wire diameter = 0.6 mm The lengths are given for f = 860 MHz NOTE: lg is the wave length in the microstrip circuit Figure 5. 860 MHz Test Circuit VSUPPLY R4 VCE R1 C — 100 µF + 10 nF + 1.0 nF R1 — 1.0 kohm R2 — 330 ohm R3 — 4.7 kohm R4 — 5.6 ohm 1/2 W R5 — 390 ohm 1N4007 C R2 2N2904 R3 R5 VBIAS Figure 6. Class A Bias Circuit MOTOROLA RF DEVICE DATA TPV597 3 PACKAGE DIMENSIONS 2 3 D 1 4 K M T F A J SEATING PLANE U P 8–32 NC 2A WRENCH FLAT E S C STYLE 1: PIN 1. 2. 3. 4. EMITTER BASE EMITTER COLLECTOR DIM A B C D E G J K M P S T U MILLIMETERS MIN MAX 7.06 7.26 6.20 6.50 14.99 16.51 5.46 5.96 1.40 1.65 1.52 ––– 0.08 0.17 11.05 ––– 45_NOM ––– 1.27 3.00 3.25 1.40 1.77 2.92 3.68 INCHES MIN MAX 0.278 0.286 0.244 0.256 0.590 0.650 0.215 0.235 0.055 0.065 0.060 ––– 0.003 0.007 0.435 ––– 45 _NOM ––– 0.050 0.118 0.128 0.055 0.070 0.115 0.145 B CASE 244–04 ISSUE J Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 TPV597 4 ◊ *TPV597/D* MOTOROLA RF DEVICETPV597/D DATA