FKPF5N80 FKPF5N80 Application Explanation • • • • Switching mode power supply, light dimmer, electric flasher unit TV sets, stereo, refrigerator, washing machine, bread maker Electric blanket, solenoid driver, small motor control Photo copier, electric tool 2 1: T1 2: T2 3: Gate 3 1 2 3 TO-220F 1 Bi-Directional Triode Thyristor Planar Silicon Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VDRM Parameter Repetitive Peak Off-State Voltage (Note1 ) Rating 800 Units V Symbol IT (RMS) Parameter RMS On-State Current Conditions Commercial frequency, sine full wave 360° conduction, TC=104°C Rating 5 Units A ITSM Surge On-State Current Sinewave 1 full cycle, peak value, non-repetitive 50Hz 50 A 60Hz 55 A 12.5 A2s 50 A/µs I2t I2t for Fusing Value corresponding to 1 cycle of halfwave, surge on-state current, tp=10ms IG = 2x IGT, tr ≤ 100ns di/dt Critical Rate of Rise of On-State Current PGM Peak Gate Power Dissipation PG (AV) 5 W Average Gate Power Dissipation 0.5 W VGM Peak Gate Voltage 10 V IGM Peak Gate Current 2 A TJ Junction Temperature - 40 ~ 125 °C TSTG Storage Temperature - 40 ~ 125 °C Viso Isolation Voltage 1500 V Ta=25°C, AC 1 minute, T1 T2 G terminal to case Thermal Characteristic Symbol Rth(J-C) Parameter Thermal Resistance ©2004 Fairchild Semiconductor Corporation Test Condition Junction to case (Note 4) Min. - Typ. - Max. 3.9 Units °C/W Rev. A, April 2004 Symbol IDRM Parameter Repetieive Peak Off-State Current VTM On-State Voltage VGT Gate Trigger Voltage (Note 2) Test Condition VDRM applied Typ. - Max. 20 Units µA - - 1.5 V V TC=25°C, ITM=7.5A Instantaneous measurement I II VD=12V, RL=20Ω III I Gate Trigger Current (Note 2) IGT Min. - II VD=12V, RL=20Ω III T2(+), Gate (+) - - 1.5 T2(+), Gate (-) - - 1.5 V T2(-), Gate (-) - - 1.5 V T2(+), Gate (+) - - 20 mA T2(+), Gate (-) - - 20 mA T2(-), Gate (-) - - 20 mA VGD Gate Non-Trigger Voltage TJ=125°C, VD=1/2VDRM 0.2 - - V IH Holding Current VD = 12V, ITM = 1A - - 30 mA IL Latching Current VD = 12V, IG = 1.2IGT - - 30 mA - - 50 mA - 300 - V/µs 10 - - V/µs I, III II dv/dt Critical Rate of Rise of Off-State Voltag VDRM = Rated, Tj = 125°C, Exponential Rise (dv/dt)C Critical-Rate of Rise of Off-State Commutating Voltage (Note 3) Notes: 1. Gate Open 2. Measurement using the gate trigger characteristics measurement circuit 3. The critical-rate of rise of the off-state commutating voltage is shown in the table below 4. The contact thermal resistance RTH(c-f) in case of greasing is 0.5 °C/W VDRM (V) FKPF5N80 Commutating voltage and current waveforms (inductive load) Test Condition Supply Voltage 1. Junction Temperature TJ=125°C 2. Rate of decay of on-state commutating current (di/dt)C = - 3.0A/ms 3. Peak off-state voltage VD = 400V Time (di/dt)C Main Current Time Time Main Voltage (dv/dt)C VD Quadrant Definitions for a Triac T2 Positive + (+) T2 Quadrant II (-) IGT GATE (+) T2 (+) IGT GATE T1 Quadrant I T1 IGT - + IGT (-) T2 Quadrant III (-) IGT GATE (-) T2 (+) IGT GATE T1 Quadrant IV T1 T2 Negative ©2004 Fairchild Semiconductor Corporation Rev. A, April 2004 FKPF5N80 Electrical Characteristics TC=25°C unless otherwise noted FKPF5N80 Typical Curves 80 PEAK SURGE ON-STATE CURRENT [A] 20 o ON-STATE CURRENT [A] 25 C 15 o 125 C 10 5 0 0.0 0.5 1.0 1.5 70 60 50 40 30 20 10 0 2.0 1 10 100 GATE VOLTAGE [V] VGM=10V PGM=5W PG(AV)=0.5W IGM=2A VGT=1.5V 1 IRGTⅠ VGD=0.2V IFGTⅠ, IRGTⅢ 100 1000 Figure 2. Rated Surge On-state Current NORMALIZED GATE TRIGGER CURRENT [%] Figure 1. Maximum On-state Characteristics 0.1 10 1000 TYPICAL EXAMPLE IⅡ, IⅢ IⅠ 100 10 -60 -20 0 20 40 60 80 100 120 140 o JUNCTION TEMPERATURE [ C] Figure 3. Gate Characteristics Figure 4. Gate Trigger Current vs Tj 1000 100 100 -40 -20 0 20 40 60 80 100 120 o JUNCTION TEMPERATURE [ C] Figure 5. Gate Trigger Voltage vs Tj ©2004 Fairchild Semiconductor Corporation 140 JUNCTION TO CASE 10 o Rth(j-c) [ C/W] TRANSIENT THERMAL IMPEDANCE NORMALIZED GATE TRIGGER VOLTAGE [%] -40 10000 GATE CURRENT [mA] 10 -60 100 NUMBER OF CYCLES AT 50Hz AND 60Hz ON-STATE VOLTAGE [V] 10 60Hz 50Hz 1 0.1 0.01 1E-3 0.01 0.1 1 10 100 TIME [sec] Figure 6. Transient Thermal Impedance Rev. A, April 2004 FKPF5N80 Typical Curves (Continues) 160 ①NO HEAT SINK ② 30 × 30 × 2 mm AL HEAT SINK ③ 50 × 50 × 2 mm AL HEAT SINK ④ 70 × 70 × 2 mm AL HEAT SINK ⑤ 100 × 100 × 2 mm AL HEAT SINK 120 100 80 ⑤ 60 ④ 40 ③ 20 0 1 120 100 80 60 o 360 CONDUCTION RESISTIVE, INDUCTIVE LOADS 40 20 ② ① 0 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 140 o 140 CASE TEMPERATURE [ C] MAXIMUM ALLOWABLE AMBIENT o TEMPERATURE [ C] 160 2 3 4 5 6 0 7 0 1 2 RMS ON-STATE CURRENT [A] ON-STATE POWER DISSIPATION [W] 12 o 360 CONDUCTION RESISTIVE, INDUCTIVE LOADS 8 6 4 2 0 0 1 2 3 4 5 6 7 4 5 6 7 Figure 8. Allowable Case Temperature vs Rms On-state Current 8 9 10 NORMALIZED REPETIVITE OFF-STATE CURRENT [%] Figure 7. Allowable Ambient Temperature vs Rms On-state Current 10 3 RMS ON-STATE CURRENT [A] 5 10 TYPICAL EXAMPLE 4 10 3 10 2 10 -60 -40 -20 0 20 40 60 80 100 120 140 o JUNCTION TEMPERATURE [ C] RMS ON-STATE CURRNT [A] Figure 9. Maximum On-state Power Dissipation Figure 10. Repetitive Peak Off-state Current vs Junction Temperature 1000 NORMALIZED LATCHING CURRENT [%] NORMALIZED HOLDING CURRENT [%] 1000 100 10 -60 -40 -20 0 20 40 60 80 100 o JUNCTION TEMPERATURE [ C] Figure 11. Holding Current vs Junction Temperature ©2004 Fairchild Semiconductor Corporation 120 140 ILⅢ 100 ILⅠ, ILⅡ 10 -60 -40 -20 0 20 40 60 80 100 120 140 o JUNCTION TEMPERATURE [ C] Figure 12. Laching Current vs Junction Temperature Rev. A, April 2004 FKPF5N80 Typical Curves (Continues) 1000 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 NORMALIZED GATE TRIGGER CURRENT [%] NORMALIZED BREAKDOWN VOLTAGE [%] 160 IⅡ IⅢ 100 IⅠ 10 1 10 100 GATE CURRENT PULSE WIDTH [µs] o JUNCTION TEMPERATURE [ C] Figure 13. Breakover Voltage vs. Junction Temperature Figure 14. Gate Trigger Current vs. Gate Current Pulse Width CRITICAL RATE OF RISE OF OFF-STATE COMMUTATION VOLTAGE [V/us] 160 TYPICAL EXAMPLE 140 o Tj=125 C 120 100 Ⅰ QUADRANT 80 60 Ⅲ QUADRANT 40 20 0 1 10 10 2 10 3 RATE OF RISE OF OFF-STATE VOLTAGE [V/ µ s] Figure 15. Breakover Voltage vs. Rate of Rise of Off-State Voltage ©2004 Fairchild Semiconductor Corporation 10 4 100 Ⅰ QUADRANT TYPICAL EXAMPLE o Tj=125 C IT=4A τ = 500us VD=200V F=3Hz 10 1 Ⅲ QUADRANT 1 10 100 RATE OF DECAY OF ON-STATE COMMUTATION CURRENT [A/ms] Figure 16. Commutation Characteristics Rev. A, April 2004 FKPF5N80 Package Dimension 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation Rev. A, April 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ FRFET™ DOME™ GlobalOptoisolator™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ FACT™ i-Lo™ Across the board. Around the world.™ The Power Franchise Programmable Active Droop™ ImpliedDisconnect™ PACMAN™ POP™ ISOPLANAR™ Power247™ LittleFET™ MICROCOUPLER™ PowerSaver™ PowerTrench MicroFET™ QFET MicroPak™ QS™ MICROWIRE™ QT Optoelectronics™ MSX™ Quiet Series™ MSXPro™ RapidConfigure™ OCX™ RapidConnect™ OCXPro™ SILENT SWITCHER OPTOLOGIC SMART START™ OPTOPLANAR™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I10