TN3440A C TO-226 BE NPN General Purpose Amplifier This device is designed for use in horizontal driver, class A off-line amplifier and off-line switching applications. Sourced from Process 36. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 250 VCBO Collector-Base Voltage 300 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current - Continuous 100 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1997 Fairchild Semiconductor Corporation Max Units TN3440A 1.0 8.0 125 W mW/°C °C/W 50 °C/W TN3440A Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS VCEO(sus ) V(BR)CBO Collector-Emitter Sustaining Voltage* IC = 50 mA, IB = 0 250 V Collector-Base Breakdown Voltage IC = 100 µA, I E = 0 300 V ICEO Collector-Cutoff Current VCE = 200 V, IB = 0 ICEX Collector-Cutoff Current VCE = 300 V, VBE = 1.5 V ICBO Collector-Cutoff Current IEBO Emitter-Cutoff Current 50 µA 500 µA VCB = 250 V, IE = 0 20 µA VEB = 5.0 V, I C = 0 20 µA 160 0.5 V 1.3 V ON CHARACTERISTICS hFE DC Current Gain VCE(sat ) Collector-Emitter Saturation Voltage I C = 2.0 mA, VCE = 10 V I C = 20 mA, VCE = 10 V I C = 50 mA, IB = 4.0 mA VBE( sat) Base-Emitter Saturation Voltage I C = 50 mA, IB = 4.0 mA 30 40 SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product I C = 10 mA, VCE = 10 V, f = 5.0 MHz VCB = 10 V, IE = 0, f = 1.0 MHz Cobo Output Capacitance Cibo Input Capacitance VBE = 5.0 V, IC = 0, f = 1.0 MHz hfe Small-Signal Current Gain I C = 5.0 mA, VCE = 10 V, f = 1.0 kHz 15 MHz 10 pF 95 pF 25 *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0% h FE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current 1000 V CE = 5V 125 °C 100 25 °C - 40 ºC 10 1 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) P 36 1 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) DC Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.3 β = 10 125 °C 0.2 25 °C 0.1 - 40 ºC 1 10 100 I C - COLLECTOR CURRENT (mA) P 36 1000 TN3440A NPN General Purpose Amplifier (continued) (continued) Base-Emitter Saturation Voltage vs Collector Current VBE(ON)- BASE-EMITTER ON VOLTAGE (mV) VBESAT- BASE-EMITTER VOLTAGE (mV) DC Typical Characteristics 1000 1000 - 40 ºC 800 25 °C 600 125 °C 400 β = 10 200 0 Base-Emitter ON Voltage vs Collector Current 1 IC 10 100 - COLLECTOR CURRENT (mA) 1000 800 - 40 ºC 25 °C 600 125 °C 400 VCE = 5V 200 0 1 10 100 I C - COLLECTOR CURRENT (mA) P 36 Pr36 I CBO- COLLECTOR CURRENT (nA) Collector-Cutoff Current vs Ambient Temperature V CB = 225V 100 10 1 0.1 25 50 75 100 125 T A - AMBIENT TEMPERATURE (ºC) 150 P 36 AC Typical Characteristics Collector-Base / Emitter-Base Capacitance vs. Reverse Bias Voltage Contours of Constant Gain Bandwidth Product (fT) 1000 TN3440A NPN General Purpose Amplifier (continued) AC Typical Characteristics (continued) Safe Operating Area TO-226 POWER DISSIPATION vs AMBIENT TEMPERATURE PD - POWER DISSIPATION (W) 1 0.75 TO-226 0.5 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 TN3440A NPN General Purpose Amplifier