Si6923DQ P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the MOSFET, providing a compact power solution for asynchronous DC/DC converter applications. • –3.5 A, –20 V. RDS(ON) = 0.045 Ω @ VGS = –4.5 V RDS(ON) = 0.075 Ω @ VGS = –2.5 V • VF < 0.55 V @ 1 A Applications • High performance trench technology for extremely low RDS(ON) • DC/DC conversion • Low profile TSSOP-8 package A A A C G S S D TSSOP-8 5 4 6 3 7 2 8 1 Pin 1 MOSFET Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Drain-Source Voltage Ratings –20 Units VDSS VGSS Gate-Source Voltage ± 12 V ID Drain Current –3.5 –30 A PD – Pulsed MOSFET Power Dissipation (minimum pad) (Note 1) Schottky Power Dissipation (minimum pad) (Note 1) Operating and Storage Junction Temperature Range TJ, TSTG Parameter – Continuous (Note 1) 1.2 1.0 -55 to +150 V W °C Schottky Maximum Ratings VRRM Repetitive Peak Reverse Voltage 20 V IF Average Forward Current 1.5 A IFM Peak Forward Current 30 A MOSFET: 115 Schottky: 130 °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (minimum pad) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 6923 Si6923DQ 13’’ 16mm 3000 units 2001 Fairchild Semiconductor Corporation Si6923DQ Rev. A(W) Si6923DQ April 2001 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = –250 µA, Referenced to25°C VDS = –16 V, VGS = 0 V –1 IGSSF Gate–Body Leakage, Forward VGS = –12 V, VDS = 0 V –100 nA IGSSR Gate–Body Leakage, Reverse VGS = 12 V, VDS = 0 V 100 nA –1.5 V On Characteristics –20 V –16 mV/°C µA (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = –250 µA, Referenced to25°C ID(on) On–State Drain Current VGS = –4.5 V, ID = –3.5 A VGS = –2.5 V, ID = –2.7 A VGS=–4.5 V, ID =–3.5A, TJ=125°C VGS = –4.5 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –3.5A 13.2 VDS = –10 V, f = 1.0 MHz V GS = 0 V, 1015 pF 446 pF 118 pF –0.6 –1.0 3 36 56 49 mV/°C 45 75 72 –15 mΩ A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time (Note 2) VDD = –5 V, VGS = –4.5 V, ID = –1 A, RGEN = 6 Ω 11 20 ns 18 32 ns td(off) Turn–Off Delay Time 34 55 ns tf Turn–Off Fall Time 34 55 ns Qg Total Gate Charge 9.7 16 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = –5V, VGS = –4.5 V ID = –3.5 A, 2.2 nC 2.4 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage Gate–Body Leakage, Reverse IGSSR VGS = 0 V, VGS = 12 V, IS = –1.25 A (Note 2) –0.6 VDS = 0 V –1.25 A –1.2 V 100 nA Schottky Diode Characteristics IR VF CT Reverse Leakage Forward Voltage Junction Capacitance VR = 20V IF = 1A TJ=25°C 0.6 50 µA TJ=125°C 1 8 mA TJ=25°C 0.48 0.55 V TJ=125°C 0.42 0.50 VR = 10V 50 V pF Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. RθJA is 115 °C/W for the MOSFET and 130°C/W for the Schottky Diode when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% Si6923DQ Rev. A (W) Si6923DQ Electrical Characteristics Si6923DQ Typical Characteristics 30 1.6 VGS = -4.5V -4.0V 24 -3.5V -3.0V VGS = -2.5V 1.4 18 -3.0V 1.2 -2.5V 12 -3.5V -2.0V 6 -4.0V 1 0 -4.5V 0.8 0 1 2 3 4 5 0 5 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 15 20 25 30 - ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.15 ID = -3.5A VGS = -4.5V ID = -1.7A 1.4 0.12 1.2 0.09 1 0.06 0.8 0.03 o TA = 125 C o TA = 25 C 0 0.6 -50 -25 0 25 50 75 100 125 150 1.5 2 2.5 o 3 3.5 4 4.5 5 -VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 30 VGS = 0V o TA = -55 C VDS = -5V o 25 C 10 24 o o 125 C TA = 125 C 1 18 o 25 C 0.1 o -55 C 12 0.01 6 0.001 0.0001 0 0.4 1.3 2.2 3.1 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Si6923DQ Rev. A (W) Si6923DQ Typical Characteristics 5 1800 ID = -3.5A VDS = -5V f = 1MHz VGS = 0 V 1500 -10V 4 -15V 1200 CISS 3 900 2 600 COSS 1 300 CRSS 0 0 0 3 6 9 12 0 5 Qg, GATE CHARGE (nC) 10 Figure 7. Gate Charge Characteristics. 20 Figure 8. Capacitance Characteristics. 10 0.01 TJ = 125o C 0.001 1 IR , REVERSE CURRENT (A IF, FORWARD CURRENT (A) 15 -VDS, DRAIN TO SOURCE VOLTAGE (V) o TJ = 100 C 0 .1 o TJ = 25 C 0 .0 1 0.0001 0.00001 TJ = 25 o C 0.000001 0.0000001 0.00000001 0 .0 0 1 0 0 .2 0 .4 0 .6 0 .8 1 0 1 .2 5 10 15 20 V F, F O R W AR D V O LT AG E (V ) V R , REV ERSE V OLTA GE (V ) Figure 9. Schottky Diode Forward Voltage. Figure 10. Schottky Diode Reverse Current. 1 D = 0.5 R θJA(t) = r(t) + R θ JA R θ JA = 135 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 t1 0.01 t2 T J - T A = P * R θ JA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1. Transient thermal response will change depending on the circuit board design. Si6923DQ Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4