Order this document by BCP69T1/D SEMICONDUCTOR TECHNICAL DATA Motorola Preferred Device This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT • High Current: IC = –1.0 Amp • The SOT-223 Package can be soldered using wave or reflow. • SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die. • Available in 12 mm Tape and Reel Use BCP69T1 to order the 7 inch/1000 unit reel. Use BCP69T3 to order the 13 inch/4000 unit reel. • NPN Complement is BCP68 4 COLLECTOR 2,4 1 2 3 BASE 1 CASE 318E-04, STYLE 1 TO-261AA EMITTER 3 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCEO – 25 Vdc Collector-Base Voltage VCBO – 20 Vdc Emitter-Base Voltage VEBO – 5.0 Vdc Collector Current IC –1.0 Adc Total Power Dissipation @ TA = 25°C(1) Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg – 65 to 150 °C Symbol Max Unit RθJA 83.3 °C/W TL 260 10 °C Sec Operating and Storage Temperature Range DEVICE MARKING CE THERMAL CHARACTERISTICS Characteristic Thermal Resistance — Junction-to-Ambient (surface mounted) Lead Temperature for Soldering, 0.0625″ from case Time in Solder Bath 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Small–Signal Motorola Motorola, Inc. 1996 Transistors, FETs and Diodes Device Data 1 BCP69T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = –100 µAdc, IE = 0) V(BR)CES – 25 — — Vdc Collector-Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) V(BR)CEO – 20 — — Vdc Emitter-Base Breakdown Voltage (IE = –10 µAdc, IC = 0) V(BR)EBO – 5.0 — — Vdc Collector-Base Cutoff Current (VCB = – 25 Vdc, IE = 0) ICBO — — –10 µAdc Emitter-Base Cutoff Current (VEB = – 5.0 Vdc, IC = 0) IEBO — — –10 µAdc 50 85 60 — — — — 375 — OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (IC = – 5.0 mAdc, VCE = –10 Vdc) (IC = – 500 mAdc, VCE = –1.0 Vdc) (IC = –1.0 Adc, VCE = –1.0 Vdc) hFE — Collector-Emitter Saturation Voltage (IC = –1.0 Adc, IB = –100 mAdc) VCE(sat) — — – 0.5 Vdc Base-Emitter On Voltage (IC = –1.0 Adc, VCE = –1.0 Vdc) VBE(on) — — –1.0 Vdc fT — 60 — MHz DYNAMIC CHARACTERISTICS Current-Gain — Bandwidth Product (IC = –10 mAdc, VCE = – 5.0 Vdc) hFE , CURRENT GAIN 200 100 70 50 VCE = –1.0 V TJ = 25°C 20 –10 –100 IC, COLLECTOR CURRENT (mA) –1000 f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz) TYPICAL ELECTRICAL CHARACTERISTICS 300 200 100 70 VCE = –10 V TJ = 25°C f = 30 MHz 50 30 –10 Figure 1. DC Current Gain –100 IC, COLLECTOR CURRENT (mA) –1000 Figure 2. Current Gain Bandwidth Product 160 –1.0 TJ = 25°C TJ = 25°C – 0.6 V(BE)sat @ IC/IB = 10 V(BE)on @ VCE = –1.0 V – 0.4 – 0.2 0 –1.0 C, CAPACITANCE (pF) V, VOLTAGE (VOLTS) – 0.8 120 80 Cib 40 V(CE)sat @ IC/IB = 10 –10 –100 –1000 IC, COLLECTOR CURRENT (mA) Figure 3. Saturation and “ON” Voltages Cob 0 Cob Cib – 5.0 –1.0 –1.0 – 2.0 –1.5 – 3.0 – 2.0 – 4.0 – 2.5 – 5.0 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitances 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data BCP69T1 INFORMATION FOR USING THE SOT-223 SURFACE MOUNT PACKAGE POWER DISSIPATION the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 1.5 watts. The power dissipation of the SOT-223 is a function of the input pad size. These can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet for the SOT-223 package, PD can be calculated as follows. PD = PD = 150°C – 25°C = 1.5 watts 83.3°C/W The 83.3°C/W for the SOT-223 package assumes the recommended collector pad area of 965 sq. mils on a glass epoxy printed circuit board to achieve a power dissipation of 1.5 watts. If space is at a premium, a more realistic approach is to use the device at a PD of 833 mW using the footprint shown. Using a board material such as Thermal Clad, a power dissipation of 1.6 watts can be achieved using the same footprint. TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into MOUNTING PRECAUTIONS • The soldering temperature and time should not exceed The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C. 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient should be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.15 3.8 0.079 2.0 0.091 2.3 0.248 6.3 0.091 2.3 0.079 2.0 0.059 1.5 0.059 1.5 0.059 1.5 inches mm SOT-223 Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 BCP69T1 PACKAGE DIMENSIONS A F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 S B 1 2 3 D L G J C 0.08 (0003) M H INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0_ 10 _ S 0.264 0.287 MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0_ 10 _ 6.70 7.30 K STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR CASE 318E–04 ISSUE H TO-261AA Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315 MFAX: [email protected] – TOUCHTONE 602–244–6609 INTERNET: http://Design–NET.com ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 4 ◊ BCP69T1/D Motorola Small–Signal Transistors, FETs and Diodes Device Data