BAS16HT1 Preferred Device Switching Diode MAXIMUM RATINGS Symbol Value Unit Continuous Reverse Voltage Rating VR 75 Vdc Peak Forward Current IF 200 mAdc IFM(surge) 500 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board (Note 1) TA = 25°C Derate above 25°C PD 200 mW 1.57 mW/°C RθJA 635 °C/W TJ, Tstg −55 to 150 °C Peak Forward Surge Current http://onsemi.com 1 CATHODE 2 ANODE THERMAL CHARACTERISTICS Thermal Resistance Junction to Ambient Junction and Storage Temperature 2 1 SOD−323 CASE 477 STYLE 1 1. FR-4 Minimum Pad. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max MARKING DIAGRAM Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 75 Vdc) (VR = 75 Vdc, TJ = 150°C) (VR = 25 Vdc, TJ = 150°C) Reverse Breakdown Voltage (IBR = 100 µAdc) V(BR) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) − − − 1.0 50 30 75 − A6 M mV 715 855 1000 1250 CD − 2.0 pF VFR − 1.75 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, RL = 50 Ω) trr − 6.0 ns Stored Charge (IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 Ω) QS − 45 pC February, 2004 − Rev. 3 1 = Specific Device Code = Date Code Vdc − − − − Semiconductor Components Industries, LLC, 2004 A6 M µAdc IR ORDERING INFORMATION Device Package Shipping† BAS16HT1 SOD−323 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: BAS16HT1/D BAS16HT1 820 Ω +10 V 2.0 k IF 100 µH tp tr 0.1 µF IF t trr 10% t 0.1 µF 90% D.U.T. 50 Ω OUTPUT PULSE GENERATOR 50 Ω INPUT SAMPLING OSCILLOSCOPE IR VR INPUT SIGNAL iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 10 IR , REVERSE CURRENT (µA) TA = 85°C 10 TA = −40°C 1.0 0.1 TA = 25°C 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 0.001 1.2 TA = 150°C TA = 25°C 10 0 Figure 2. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Leakage Current 0.68 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 0.64 0.60 0.56 0.52 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 2 8 50 BAS16HT1 PACKAGE DIMENSIONS SOD−323 CASE 477−02 ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. K A D 1 2 B DIM A B C D E H J K L E C J NOTE 3 L NOTE 5 MILLIMETERS MIN MAX 1.60 1.80 1.15 1.35 0.80 1.00 0.25 0.40 0.15 REF 0.00 0.10 0.089 0.177 2.30 2.70 0.075 −−− H STYLE 1: PIN 1. CATHODE 2. ANODE SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 3 INCHES MIN MAX 0.063 0.071 0.045 0.053 0.031 0.039 0.010 0.016 0.006 REF 0.000 0.004 0.0035 0.0070 0.091 0.106 0.003 −−− BAS16HT1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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