ETC PS2705-1

DATA SHEET
PHOTOCOUPLER
PS2705-1,PS2705-2,PS2705-4
HIGH ISOLATION VOLTAGE
AC INPUT RESPONSE TYPE
SOP MULTI PHOTOCOUPLER
−NEPOC
TM
Series−
DESCRIPTION
The PS2705-1, PS2705-2, PS2705-4 are optically coupled isolators containing two GaAs light emitting diodes and
an NPN silicon phototransistor.
These packages are SOP (Small Outline Package) type and have shield effect to cut off ambient light.
They are designed for high density mounting applications.
FEATURES
• AC input response
• High isolation voltage (BV = 3 750 Vr.m.s.)
• High current transfer ratio (CTR = 100 % TYP.)
• SOP (Small Outline Package) type
• High-speed switching (tr = 3 µs TYP., tf = 5 µs TYP.)
• Ordering number of taping product (Only-1 type) : PS2705-1-E3, E4, F3, F4
• UL approved: File No. E72422 (S)
• VDE0884 approved (Option)
APPLICATIONS
• Hybrid IC
• Telephone/FAX
• FA/OA equipment
• Programmable logic controllers
• Power supply
ORDERING INFORMATION
Part Number
Package
Safety Standard Approval
PS2705-1
4-pin SOP
Standard products
PS2705-2
8-pin SOP
• UL approved
PS2705-4
16-pin SOP
PS2705-1-V
4-pin SOP
PS2705-2-V
8-pin SOP
PS2705-4-V
16-pin SOP
VDE0884 approved products (Option)
The information in this document is subject to change without notice.
Document No. P11309EJ5V0DS00 (5th edition)
Date Published December 1998 NS CP (K)
Printed in Japan
The mark • shows major revised points.
©
1988
PS2705-1,PS2705-2,PS2705-4
PACKAGE DIMENSIONS (in millimeters)
PS2705-1
4.5 MAX.
TOP VIEW
4
1
3
1. Anode, Cathode
2. Cathode, Anode
3. Emitter
4. Collector
2
1.3
0.15 +0.10
–0.05
2.0
0.1±0.1
2.3 MAX.
7.0±0.3
4.4
2.54
0.4 +0.10
–0.05
1.2 MAX.
0.5±0.3
0.25 M
PS2705-2
9.3 MAX.
TOP VIEW
8
7
6
5
1. 3.
2. 4.
5. 7.
6. 8.
1
2
3
4
7.0±0.3
4.4
1.3
0.15 +0.10
–0.05
2.0
0.1±0.1
2.3 MAX.
Anode, Cathode
Cathode, Anode
Emitter
Collector
2.54
0.4 +0.10
–0.05
1.2 MAX.
0.5±0.3
0.25 M
PS2705-4
19.46 MAX.
TOP VIEW
16
15
1
2
14
13
12
3
4
5
1. 3. 5. 7.
2. 4. 6. 8.
9. 11. 13. 15.
10. 12. 14. 16.
0.15 +0.10
–0.05
2.0
0.1±0.1
2.3 MAX.
2
0.25 M
2.54
1.2 MAX.
Data Sheet P11309EJ5V0DS00
0.5±0.3
10
9
6
7
8
Anode, Cathode
Cathode, Anode
Emitter
Collector
7.0±0.3
4.4
0.4 +0.10
–0.05
11
1.3
PS2705-1,PS2705-2,PS2705-4
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified)
Ratings
Parameter
Diode
Symbol
PS2705-2,
PS2705-4
Unit
IF
± 50
mA
∆PD/°C
0.8
mW/°C
PD
80
mW/ch
IFP
±1
A
Collector to Emitter Voltage
VCEO
40
V
Emitter to Collector Voltage
VECO
6
V
IC
80
mA/ch
Forward Current (DC)
Power Dissipation Derating
Power Dissipation
Peak Forward Current
Transistor
PS2705-1
*1
Collector Current
Power Dissipation Derating
Power Dissipation
*2
∆PC/°C
1.5
1.2
mW/°C
PC
150
120
mW/ch
Isolation Voltage
BV
3 750
Vr.m.s.
Operating Ambient Temperature
TA
–55 to +100
°C
Storage Temperature
Tstg
–55 to +150
°C
*1 PW = 100 µs, Duty Cycle = 1 %
*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
Data Sheet P11309EJ5V0DS00
3
PS2705-1,PS2705-2,PS2705-4
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Parameter
Diode
Symbol
Conditions
MIN.
MAX.
Unit
1.4
V
Forward Voltage
VF
IF = ± 5 mA
1.1
Terminal Capacitance
Ct
V = 0 V, f = 1 MHz
60
Transistor
Collector to Emitter
Current
ICEO
IF = 0 mA, VCE = 40 V
Coupled
Current Transfer Ratio
*1
(IC/IF)
CTR
IF = ± 5 mA, VCE = 5 V
50
CTR Ratio
CTR1/
CTR2
IF = ± 5 mA, VCE = 5 V
0.3
Collector Saturation
Voltage
VCE (sat)
IF = ± 10 mA, IC = 2 mA
Isolation Resistance
RI-O
VI-O = 1 kVDC
Isolation Capacitance
CI-O
V = 0 V, f = 1 MHz
Rise Time
Fall Time
*2
tr
*2
VCC = 5 V, IC = 2 mA, RL = 100 Ω
tf
M: 50 to 150 (%)
L: 100 to 300 (%)
N: 50 to 300 (%)
*2 CTR1 = IC1/IF1, CTR2 = IC2/IF2
IC1
IF1
VCE
IC2
IF2
*3 Test circuit for switching time
Pulse Input
IF
VCC
PW = 100 µs
Duty Cycle = 1/10
In monitor
50 Ω
VOUT
RL = 100 Ω
Data Sheet P11309EJ5V0DS00
pF
100
nA
100
300
%
1.0
3.0
0.3
V
Ω
11
10
0.4
pF
3
µs
5
*1 CTR rank (only PS2705-1)
4
TYP.
PS2705-1,PS2705-2,PS2705-4
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)
TRANSISTOR POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Transistor Power Dissipation PC (mW)
Diode Power Dissipation PD (mW)
100
75
50
25
25
0
50
75
100
200
150
PS2705-1
1.5 mW/˚C
100
PS2705-2,
PS2705-4
1.2 mW/˚C
50
0
25
50
75
100
Ambient Temperature TA (˚C)
Ambient Temperature TA (˚C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
FORWARD CURRENT vs.
FORWARD VOLTAGE
100
80
10
1
Forward Current IF (mA)
Forward Current IF (mA)
60
TA = +100 ˚C
+75 ˚C
+50 ˚C
+25 ˚C
0 ˚C
–25 ˚C
–55 ˚C
0.1
40
20
0
–20
–40
–60
0.8
1.0
1.2
1.4
–80
–1.6 –1.2 –0.8 –0.4
1.6
0
0.4
0.8
1.2
1.6
Forward Voltage VF (V)
Forward Voltage VF (V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
50
10 000
IF = 25 mA
20
1 000
Collector Current IC (mA)
Collector to Emitter Dark Current ICEO (nA)
0.01
0.6
VCE = 40 V
24 V
10 V
100
10
1
10 mA
10
5 mA
5
2
2 mA
1
1 mA
0.5
0.2
0.1
–60 –40
–20
0
20
40
60
80
100
0.1
0.0
0.2
0.4
0.6
0.8
1.0
Collector Saturation Voltage VCE (sat) (V)
Ambient Temperature TA (˚C)
Data Sheet P11309EJ5V0DS00
5
PS2705-1,PS2705-2,PS2705-4
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
IF = 30 mA
20 mA
30
15 mA
20
10 mA
10
5 mA
2
0
4
6
8
10
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
1.2
1.0
0.8
0.6
0.4
Normalized to 1.0
at TA = 25 ˚C,
IF = 5 mA, VCE = 5 V
0.2
0.0
–50
–25
50
75
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
SWITCHING TIME vs.
LOAD RESISTANCE
100
VCE = 5 V
Switching Time t ( µ s)
250
200
150
100
100
VCC = 5 V,
IC = 2 mA
50
ton
toff
10
5
td
ts
1
0.5
50
0.5
1
5
0.1
50
50
10
100
Forward Current IF (mA)
1 000
IF = 5 mA, VCC = 5 V,
500 CTR = 169 %
500
1k
2k
FREQUENCY RESPONSE
1.2
tf
1.0
10
5
tr
td
1
0.5
Normalized Gain GV
ts
100
50
0.1
100
200
Load Resistance RL (Ω)
SWITCHING TIME vs.
LOAD RESISTANCE
Switching Time t ( µ s)
25
Ambient Temperature TA (˚C)
0
0.05 0.1
0.8
0.6
RL = 1 kΩ
510 Ω
300 Ω
100 Ω
0.4
0.2
500 1 k
5 k 10 k
50 k 100 k
0.0
2
5
10
20
50
100 200
Frequency f (kHz)
Load Resistance RL (Ω)
6
0
Collector to Emitter Voltage VCE (V)
300
Current Transfer Ratio CTR (%)
Normalized Current Transfer Ratio CTR
Collector Current IC (mA)
50
Data Sheet P11309EJ5V0DS00
500
PS2705-1,PS2705-2,PS2705-4
LONG TERM CTR DEGRADATION
1.2
CTR (Relative Value)
1.0
0.8
IF = 1 mA, TA = 25 ˚C
IF = 5 mA, TA = 25 ˚C
IF = 20 mA, TA = 25 ˚C
IF = 20 mA, TA = 60 ˚C
0.6
0.4
0.2
0.0
1
102
103
104
105
106
Time (Hr)
Remark The graphs indicate nominal characteristics.
Data Sheet P11309EJ5V0DS00
7
PS2705-1,PS2705-2,PS2705-4
TAPING SPECIFICATIONS (in millimeters)
1.55±0.1
2.4±0.1
7.4±0.1
5.5±0.1
1.55±0.1
12.0±0.2
2.0±0.1
4.0±0.1
1.75±0.1
Outline and Dimensions (Tape)
0.3
4.6±0.1
8.0±0.1
Taping Direction
PS2705-1-E4
PS2705-1-F4
PS2705-1-E3
PS2705-1-F3
Outline and Dimensions (Reel)
6
6.0±1
Packing: PS2705-1-E3, E4 900 pcs/reel
PS2705-1-F3, F4 3 500 pcs/reel
8
Data Sheet P11309EJ5V0DS00
φ 13.0±0.5
1.5±0.5
φ 66
2.0±0.5
0˚
1.5±0.1
120
˚
PS2705-1-E3, E4: φ 178
PS2705-1-F3, F4: φ 330
φ 21.0±0.8
1.5±0.1
12.4 +2.0
–0.0
18.4 MAX.
PS2705-1,PS2705-2,PS2705-4
RECOMMENDED SOLDERING CONDITIONS
(1) Infrared reflow soldering
• Peak reflow temperature
235 °C (package surface temperature)
• Time of temperature higher than 210 °C
30 seconds or less
• Number of reflows
Three
• Flux
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt % is recommended.)
Package Surface Temperature T (˚C)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
235 ˚C (peak temperature)
210 ˚C
to 30 s
120 to 160 ˚C
60 to 90 s
(preheating)
Time (s)
Peak temperature 235 ˚C or below
(2) Dip soldering
• Temperature
260 °C or below (molten solder temperature)
• Time
10 seconds or less
• Number of times
One
• Flux
Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of
0.2 Wt % is recommended.)
Data Sheet P11309EJ5V0DS00
9
PS2705-1,PS2705-2,PS2705-4
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)
Parameter
Symbol
Speck
Unit
Application classification (DIN VDE 0109)
for rated line voltages ≤ 300 Vr.m.s.
IV
for rated line voltages ≤ 600 Vr.m.s.
III
Climatic test class (DIN IEC 68 Teil 1/09.80)
55/100/21
Dielectric strength
Maximum operating isolation voltage
UIORM
710
Vpeak
Upr
850
Vpeak
Test voltage (partial discharge test, procedure b for random test)
Upr = 1.6 × UIORM, Pd < 5 pC
Upr
1 140
Vpeak
Highest permissible overvoltage
UTR
6 000
Vpeak
Test voltage (partial discharge test, procedure a for type test and random test)
Upr = 1.2 × UIORM, Pd < 5 pC
Degree of pollution (DIN VDE 0109)
2
Clearance distance
>5
mm
Creepage distance
>5
mm
Comparative tracking index (DIN IEC 112/VDE 0303 part 1)
CTI
Material group (DIN VDE 0109)
175
III a
Storage temperature range
Tstg
–55 to +150
°C
Operating temperature range
TA
–55 to +100
°C
Ris MIN.
10
Isolation resistance, minimum value
VIO = 500 V dc at TA = 25 °C
VIO = 500 V dc at TA MAX. at least 100 °C
12
Ω
11
Ris MIN.
10
Ω
Package temperature
Tsi
150
°C
Current (input current IF, Psi = 0)
Isi
200
mA
Power (output or total power dissipation)
Psi
300
mW
Ris MIN.
10
Safety maximum ratings
(maximum permissible in case of fault, see thermal derating curve)
Isolation resistance
VIO = 500 V dc at TA = 175 °C (Tsi)
10
Data Sheet P11309EJ5V0DS00
9
Ω
PS2705-1,PS2705-2,PS2705-4
[MEMO]
Data Sheet P11309EJ5V0DS00
11
PS2705-1,PS2705-2,PS2705-4
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.
NEPOC is a trademark of NEC Corporation.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5