IRF IRG4PSC71UD

PD - 91682A
IRG4PSC71UD
UltraFast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Features
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
(minimum switching and conduction losses) than
prior generations
• IGBT co-packaged with HEXFRED ultrafast, ultrasoft
recovery anti-parallel diodes for use in bridge
configurations
• Industry-benchmark Super-247 package with
higher power handling capability compared to
same footprint TO-247
• Creepage distance increased to 5.35mm
VCES = 600V
VCE(on) typ. = 1.67V
G
@VGE = 15V, IC = 60A
E
n-cha n ne l
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• Maximum power density, twice the power
handling of TO-247, less space than TO-264
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with IGBTs
• Cost and space saving in designs that require
multiple, paralleled IGBTs
SUPER - 247
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
Units
600
85…
60
200
200
60
350
± 20
350
140
-55 to +150
V
A
V
W
°C
300 (0.063 in. (1.6mm) from case)
Thermal Resistance\ Mechanical
Parameter
RθJC
RθJC
RθCS
RθJA
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Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Min.
Typ.
Max.
–––
–––
–––
–––
20.0(2.0)
–––
–––
–––
0.24
–––
–––
6 (0.21)
0.36
0.69
–––
38
–––
–––
Units
°C/W
N (kgf)
g (oz)
1
5/12/99
IRG4PSC71UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltageƒ 600 –––
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.39
VCE(on)
Collector-to-Emitter Saturation Voltage ––– 1.67
––– 1.95
––– 1.71
VGE(th)
Gate Threshold Voltage
3.0 –––
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -13
gfe
Forward Transconductance „
47
70
ICES
Zero Gate Voltage Collector Current
––– –––
––– –––
VFM
Diode Forward Voltage Drop
––– 1.4
––– 1.3
IGES
Gate-to-Emitter Leakage Current
––– –––
V(BR)CES
Max. Units
Conditions
–––
V
VGE = 0V, IC = 250µA
––– V/°C VGE = 0V, IC = 10mA
2.0
IC = 60A
VGE = 15V
–––
IC = 100A
See Fig. 2, 5
V
–––
IC = 60A, TJ = 150°C
6.0
VCE = VGE, IC = 250µA
––– mV/°C VCE = VGE, IC = 1.5mA
–––
S
VCE = 50V, IC = 60A
500
µA
VGE = 0V, VCE = 600V
13
mA
VGE = 0V, VCE = 600V, TJ = 150°C
1.7
IC = 60A
See Fig. 13
V
–––
IC = 60A, TJ = 150°C
±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
di(rec)M/dt
During tb
Diode Peak Rate of Fall of Recovery
2
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
340
44
160
90
94
245
110
3.26
2.27
5.53
91
88
353
150
7.1
13
7500
720
93
82
140
8.2
13
364
1084
328
266
Max. Units
Conditions
520
IC = 60A
66
nC VCC = 400V
See Fig. 8
240
VGE = 15V
–––
TJ = 25°C
–––
ns
IC = 60A, VCC = 480V
368
VGE = 15V, RG = 5.0Ω
167
Energy losses include "tail" and
–––
diode reverse recovery.
–––
mJ See Fig. 9, 10, 11, 18
7.2
–––
TJ = 150°C, See Fig. 9, 10, 11, 18
–––
ns
IC = 60A, VCC = 480V
–––
VGE = 15V, RG = 5.0Ω
–––
Energy losses include "tail" and
–––
mJ diode reverse recovery.
–––
nH Measured 5mm from package
–––
VGE = 0V
–––
pF
VCC = 30V
See Fig. 7
–––
ƒ = 1.0MHz
120
TJ = 25°C See Fig.
ns
210
TJ = 125°C
14
IF = 60A
12
TJ = 25°C See Fig.
A
20
TJ = 125°C
15
VR = 200V
546
TJ = 25°C See Fig.
nC
1625
TJ = 125°C
16
di/dt = 200A/µs
–––
TJ = 25°C See Fig.
A/µs
–––
TJ = 125°C
17
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IRG4PSC71UD
80
F or b oth:
D uty c y c le : 50 %
T J = 12 5° C
T sink = 90 °C
G a te d riv e a s s pe c ified
LOAD CURRENT (A)
60
P ow er D is s ipation = 58 W
S q u a re w a v e :
40
60% of rated
voltage
I
20
Id e a l d io d es
0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
I C , Collector Current
(A) (A)
Ic , Collector-to-Emitter
Current
TJ = 25 ° C
I C , Collector-to-Emitter Current (A)
1000
1000
TJ = 150 ° C
100
100
TJ = 150 ° C
10
V GE = 15V
80µs PULSE WIDTH
1
1.0
1.5
2.0
2.5
3.0
3.5
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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TJ = 25 ° C
10
V CC = 50V
5µs PULSE WIDTH
1
5
6
7
8
9
10
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4PSC71UD
100
3.0
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current (A)
LIM ITE D B Y P A C K A G E
80
60
40
20
V GE = 15V
A
0
25
50
75
100
125
IC = 120 A
2.0
IC = 60 A
IC = 30 A
1.0
-60 -40 -20
150
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (° C)
TC , C a s e T e m p e ra tu re (°C )
Fig. 4 - Maximum Collector Current vs.
Temperature
VGE = 15V
80 us PULSE WIDTH
Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (ZthJC)
1
D = 0.50
0.1
0.20
PDM
0.10
0.05
0.02
0.01
0.01
0.0001
t1
t2
S IN G LE P U LS E
(TH E R M A L R E S P O N S E )
Notes:
1. Duty factor D = t
1 / t2
2. Peak TJ = PDM x Z thJC + TC
0.001
0.01
0.1
1
10
A
100
t 1 , R e cta n g u la r P u ls e D u ra tio n (s e c)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PSC71UD
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
C, Capacitance (pF)
12000
10000
Cies
8000
6000
Coes
4000
Cres
2000
20
VGE , Gate-to-Emitter Voltage (V)
14000
0
1
10
16
12
8
4
0
100
0
VCE , Collector-to-Emitter Voltage (V)
200
300
400
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
100
= 480V
= 15V
= 25 ° C
= 60A
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V CC
V GE
11.0 TJ
IC
100
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
12.0
VCC = 400V
I C = 60A
10.0
9.0
8.0
7.0
RG = 5.0Ω
5.0Ohm
VGE = 15V
VCC = 480V
IC = 120 A
10
IC = 60 A
IC = 30 A
6.0
5.0
0
10
20
30
40
RGR,GGate
, GateResistance
Resistance ( Ω )
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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50
1
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature °( C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4PSC71UD
1000
Ω
= 5.0Ohm
= 150 ° C
= 480V
= 15V
I C , Collector Current (A)
RG
TJ
VCC
20 VGE
VGE = 20V
T J = 125 o C
100
15
10
10
5
SAFE OPERATING AREA
0
20
40
60
80
100
120
1
1
I C , Collector Current (A)
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
1000
Instantaneous forward current - IF (A)
Total Switching Losses (mJ)
25
100
TJ = 1 5 0 °C
10
TJ = 1 2 5 °C
TJ =
2 5 °C
1
0.0
1.0
2.0
3.0
F o r w a rd V o lta g e D ro p - V F M (V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
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IRG4PSC71UD
200
100
VR = 2 0 0 V
T J = 1 2 5 °C
T J = 2 5 °C
VR = 2 0 0 V
T J = 1 2 5 °C
T J = 2 5 °C
Irr- ( A)
trr- (nC)
160
120
10
I F = 30A
80
I F = 60A
I F = 120A
40
I F = 30A
I F = 60A
I F = 120A
0
100
d i f /d t - (A /µ s)
1
100
1000
1000
d i f /d t - (A /µ s )
Fig. 14 - Typical Reverse Recovery vs. dif/dt
Fig. 15 - Typical Recovery Current vs. dif/dt
10000
4000
VR = 20 0 V
T J = 1 2 5 °C
T J = 2 5 °C
VR = 2 0 0 V
T J = 1 2 5 °C
TJ = 2 5 °C
I F = 3 0A
I F = 6 0A
I F = 1 20 A
di (rec) M/dt- (A /µs)
Qrr- (nC)
3000
2000
I F = 120A
1000
I F = 60A
I F = 30A
1000
0
100
d i f /d t - (A /µ s)
Fig. 16 - Typical Stored Charge vs. dif/dt
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1000
100
100
1000
d i f /d t - (A /µ s)
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
7
IRG4PSC71UD
90% V ge
Same type
device as
D .U.T.
+V ge
V ce
430µF
80%
of Vce
D .U .T.
Ic
90% Ic
10% V ce
Ic
5% Ic
td (off)
tf
E off =
Fig. 18a - Test Circuit for Measurement of
∫ Vce Ic dt
t1+5µ S
V ce ic dt
t1
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G A T E V O LT A G E D .U .T .
10% + V g
trr
Q rr =
Ic
trr
id
Ic dtdt
tx
∫
+V g
tx
10% V c c
10% Irr
Vcc
D U T V O LT A G E
AND CURRENT
Vce
V pk
Irr
Vcc
10% Ic
Ipk
90% Ic
Ic
D IO D E R E C O V E R Y
W AVEFORMS
tr
td(on)
5% V c e
t1
∫
t2
c e ieIcdt dt
E on = VVce
t1
t2
E rec =
D IO D E R E V E R S E
RECOVERY ENERG Y
t3
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
8
∫ Vc Ic dt
t4
V d id dt
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
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IRG4PSC71UD
V g G A T E S IG N A L
D E V IC E U N D E R T E S T
C U R R E N T D .U .T .
V O LT A G E IN D .U .T .
C U R R E N T IN D 1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
D.U.T.
L
1000V
Vc*
RL=
480V
4 X IC @25°C
0 - 480V
50V
600 0µ F
100 V
Figure 19. Clamped Inductive Load Test Circuit
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Figure 20. Pulsed Collector Current
Test Circuit
9
IRG4PSC71UD
Notes:
 Repetitive rating: VGE=20V; pulse width limited by maximum junction
temperature (figure 20)
‚ VCC=80%(VCES), VGE=20V, L=10µH, RG= 5.0Ω (figure 19)
ƒ Pulse width ≤ 80µs; duty factor ≤ 0.1%
„ Pulse width 5.0µs, single shot
…Current limited by the package, (Die current = 100A)
Case Outline and Dimensions — Super-247
Dimensions are shown in millimeters
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice.
5/99
10
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