Order this document by MRF8372/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW Minimum Gain = 8.0 dB Efficiency 60% (Typ) 750 mW, 870 MHz RF LOW POWER TRANSISTOR NPN SILICON • State–of–the–Art Technology Fine Line Geometry Gold Top Metal and Wires Silicon Nitride Passivated Ion Implanted Arsenic Emitters • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. • Order MRF8372 in tape and reel packaging by adding suffix: R1 suffix = 500 units per reel R2 suffix = 2,500 units per reel CASE 751–05, STYLE 1 SORF (SO–8) MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 16 Vdc Collector–Base Voltage VCBO 36 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 200 mAdc Total Device Dissipation @ TC = 75°C (1) Derate above 75°C PD 1.67 22.2 Watts mW/°C Storage Temperature Range TJ, Tstg – 55 to +150 °C Maximum Junction Temperature TJmax 150 °C Symbol Max Unit RθJC 45 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case DEVICE MARKING MRF8372 = 8372 NOTE: 1. Case temperature measured on collector lead immediately adjacent to body of package. (Replaces MRF837/D) RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MRF8372R1, R2 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) V(BR)CEO 16 — — Vdc Collector–Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0) V(BR)CES 36 — — Vdc Emitter–Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc ICES — — 0.1 mAdc hFE 30 90 200 — Cob — 1.8 2.5 pF Common–Emitter Amplifier Power Gain (VCC = 12.5 Vdc, Pout = 0.75 W, f = 870 MHz) Gpe 8.0 10 — dB Collector Efficiency (VCC = 12.5 Vdc, Pout = 0.75 W, f = 870 MHz) η 55 60 — % OFF CHARACTERISTICS Collector Cutoff Current (VCE = 15 Vdc, VBE = 0, TC = 25°C) ON CHARACTERISTICS DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 15 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS MRF8372R1, R2 2 MOTOROLA RF DEVICE DATA C6 L3 B + B C7 L1 + C8 L2 VCC – C4 Z5 Z1 Z2 Z3 Z4 Z6 DUT C5 C2 C1 C3 C1, C5 — 0.8 – 8.0 pF Johanson Gigatrim C2, C3 — 10 pF Ceramic Chip Capacitor C6 — 91 pF Clamped Mica, Mini–Underwood C4 — 47 pF Ceramic Chip Capacitor C7 — 91 pF Clamped Mica, Mini–Underwood C8 — 1.0 µF 25 V Tantalum B — Bead, Ferroxcube 56–590–65/3B L1, L2 — 4 Turns, #21 AWG, 5/32″ ID L3 — 7 Turns, #21 AWG, 5/32″ ID Z1, Z2 — 1″ x 0.078″ Microstrip, Zo = 50 Ohms Z3 — 0.25″ x 0.078″ Microstrip, Zo = 50 Ohms Z4 — 0.15″ x 0.078″ Microstrip, Zo = 50 Ohms Z5 — 0.30″ x 0.078″ Microstrip, Zo = 50 Ohms Z6 — 1.63″ x 0.078″ Microstrip, Zo = 50 Ohms PCB — 1/32″ Glass Teflon, εr = 2.56 Figure 1. 800 – 900 MHz Broadband Circuit 800/900 MHz BAND DATA Pout = 750 mW VCC = 12.5 Vdc 12 G PE , GAIN (dB) 70 8 ηc 60 6 50 4 2 800 IRL 820 840 860 880 f, FREQUENCY (MHz) 10 15 20 25 900 η c , COLLECTOR IRL, INPUT RETURN LOSS (dB) EFFICIENCY (%) GPE 10 Figure 2. Typical Broadband Performance MOTOROLA RF DEVICE DATA MRF8372R1, R2 3 Zin Ohms VCC = 7.5 V ZOL* Ohms VCC = 12.5 V VCC = 7.5 V VCC = 12.5 V Pout = 806 MHz = 1.05 mW Pout = 870 MHz = 855 mW Pout = 960 MHz = 580 mW f Frequency MHz Pin = 150 mW Pin = 100 mW Pout = 806 MHz = 820 mW Pout = 870 MHz = 635 mW Pout = 960 MHz = 530 mW 806 8.0 + j1.9 4.0 + j1.2 24.7 – j19.2 20.9 – j31.0 870 5.2 + j3.5 6.0 + j1.9 36.9 – j20.5 32.1 – j26.6 960 6.8 + j4.0 6.1 + j2.5 39.3 – j18.5 36.3 – j25.7 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage, and frequency. Table 1. Series Equivalent Input/Output Impedance TYPICAL CHARACTERISTICS 800/900 MHz BAND DATA (continued) 1200 1000 Pout , OUTPUT POWER (mW) Pout , OUTPUT POWER (mW) VCC = 12.5 Vdc 900 7.5 Vdc 600 300 0 0 15 30 45 60 75 90 105 Pin, INPUT POWER (mW) 120 135 Pin = 150 mW 500 100 mW 50 mW 0 800 150 Figure 3. Output Power versus Input Power f = 870 MHz 820 840 860 880 900 f, FREQUENCY (MHz) 920 940 960 Figure 4. Output Power versus Frequency VCC = 7.5 Vdc 1200 1600 Pout , OUTPUT POWER (mW) Pout , OUTPUT POWER (mW) Pin = 150 mW 1200 900 100 mW 600 50 mW 300 Pin = 150 mW 800 100 mW 400 50 mW VCC = 12.5 Vdc f = 870 MHz 0 6 8 10 12 VCC, COLLECTOR VOLTAGE (Vdc) 14 Figure 5. Output Power versus Collector Voltage MRF8372R1, R2 4 16 0 800 820 840 860 880 900 f, FREQUENCY (MHz) 920 940 960 Figure 6. Output Power versus Frequency MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 800/900 MHz BAND DATA (continued) 1600 1200 1000 Pout , OUTPUT POWER (mW) Pout , OUTPUT POWER (mW) 1400 1200 VCC = 12.5 Vdc 1000 800 7.5 Vdc 600 400 Pin = 75 mW 600 50 mW 400 VCC = 7.5 Vdc f = 512 MHz 0 10 20 30 40 50 Pin, INPUT POWER (mW) 60 70 0 400 80 1400 1500 1200 1300 1000 Pin = 75 mW 800 440 460 480 f, FREQUENCY (MHz) 600 25 mW 50 mW 900 700 25 mW VCC = 12.5 Vdc f = 512 MHz 8 10 12 VCC, COLLECTOR VOLTAGE (Vdc) 14 Figure 9. Output Power versus Collector Voltage MOTOROLA RF DEVICE DATA 520 Pin = 75 mW 600 200 6 500 1100 50 mW 400 420 Figure 8. Output Power versus Frequency Pout , OUTPUT POWER (mW) Pout , OUTPUT POWER (mW) Figure 7. Output Power versus Input Power 0 25 mW 200 200 0 800 16 300 400 420 440 460 480 f, FREQUENCY (MHz) 500 520 Figure 10. Output Power versus Frequency MRF8372R1, R2 5 PACKAGE DIMENSIONS D A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSIONS ARE IN MILLIMETERS. 3. DIMENSION D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE MOLD PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION. C 8 5 0.25 H E M B M 1 4 h B e X 45 _ q A C SEATING PLANE L 0.10 A1 B 0.25 M C B S A S STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. EMITTER COLLECTOR COLLECTOR EMITTER EMITTER BASE BASE EMITTER DIM A A1 B C D E e H h L q MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.35 0.49 0.18 0.25 4.80 5.00 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_ CASE 751–05 ISSUE S Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax: [email protected] – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps MRF8372R1, R2 6 ◊ MRF8372/D MOTOROLA RF DEVICE DATA