TRANSISTOR MODULE Hi- SQD400BA60 UL;E76102 M SQD400BA60 is a Darlington power transistor module with a ULTRA HIGH hFE, high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr 200ns). The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction, IC 400A, VCEX 600V Low saturation voltage for higher efficiency. ULITRA HIGH DC current gain hFE. hFE 750 Isolated mounting base IVEBO 10V for faster switching speed. Applications Motor Control VVVF , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application Unit A Maximum Ratings Symbol Tj 25 Item Ratings Conditions SQD400BA60 Unit VCBO Collector-Base Voltage 600 V VCEX Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage IC IC Collector Current VBE 2V 10 =pw 1ms 400 800 400 Reverse Collector Current IB Base Current PT Total power dissipation V A TC 25 A 24 A 1500 W Tj Junction Temperature 40 Tstg Storage Temperature VISO Isolation Voltage A.C.1minute 40 125 2500 Mounting M6 Recommended Value 43kgf B 4.7 (48) Terminal M6 Recommended Value 43kgf B 4.7 (48) Terminal M4 Recommended Value 12.5kgf B Typical Value 1.5 (15) Mounting Torque Mass 150 V N m ( f B) 460 g Electrical Characteristics Symbol Tj 25 Item Conditions ICBO Collector Cut-off Current VCB VCBO IEBO Emitter Cut-off Current VEB VEBO VCEO SUS Ratings Min. Typ. Max. Unit 4.0 mA 1600 mA 450 Collector Emitter Sustaning Voltage Ic 1A DC Current Gain Ic 400A VCE 2.5V sat Collector-Emitter Saturation Voltage Ic 400A IB 530mA 2.5 V VBE sat Base-Emitter Saturation Voltage Ic 400A IB 530mA 3.0 V VCEX SUS hFE VCE ton ts tf VECO trr Rth j-c 57 Ic 80A IB2 V 600 8A 750 On Time Switching Time Storage Time Fall Time Collector-Emitter Reverse Voltage Reverse Recovery time Thermal Impedance (junction to case) 2.0 Vcc 300V Ic 400A 8A IB1 0.8A IB2 8.0 1.8 Ic 400A Vcc 300V, Ic 400A, di/dt 300A/ s, VBE Transistor part Diode part s 2.0 5V 200 V ns 0.083 0.25 /W SQD400BA60 58