SFH154 Advanced Power MOSFET FEATURES BVDSS = 150 V ■ Avalanche Rugged Technology RDS(on) = 0.075 Ω ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ID = 34 A ■ Improved Gate Charge ■ Extended Safe Operating Area TO-3P o ■ 150 C Operating Temperature ■ Lower Leakage Current : 10 µA (Max.) @ VDS = 150V ■ Lower RDS(ON) : 0.064 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS Characteristic Drain-to-Source Voltage o ID Continuous Drain Current (TC=25 C) o Continuous Drain Current (TC=100 C) ① VGS Gate-to-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy ① dv/dt Peak Diode Recovery dv/dt ③ V A 136 A ±30 V ② 867 mJ ① 34 A 20.4 mJ 5.0 V/ns Total Power Dissipation (TC=25 C) 204 W Linear Derating Factor 1.63 W/ C o TL 150 21.6 Drain Current-Pulsed TJ , TSTG Units 34 IDM PD Value Operating Junction and o - 55 to +150 Storage Temperature Range o Maximum Lead Temp. for Soldering C 300 Purposes, 1/8＂ from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. RθJC Junction-to-Case -- 0.61 RθCS Case-to-Sink 0.24 -- RθJA Junction-to-Ambient -- 40 Units o C/W 1 N-CHANNEL POWER MOSFET SFH154 Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol Characteristic BVDSS Drain-Source Breakdown Voltage VGS(th) IGSS IDSS RDS(on) Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance 150 -- -- -- 0.11 -- V/℃ 2.0 -- 4.0 V -- -- 100 VDS=5V,ID=250μA VGS=20V VGS=-20V -- -100 -- 10 -- -- 100 -- -- 0.075 Ω VGS=10V,ID=17A ④ 20 -- VDS=40V,ID=17A ④ Forward Transconductance -- Input Capacitance -- 2590 3370 Coss Output Capacitance -- 380 450 Crss Reverse Transfer Capacitance -- 135 200 td(on) Turn-On Delay Time -- 20 50 Rise Time -- 25 60 Turn-Off Delay Time -- 70 145 Fall Time -- 30 70 tf See Fig 7 -- gfs td(off) nA VGS=0V,ID=250μA ID=250μA -- Ciss tr V Test Condition Ω ΔBV/ΔTJ Min. Typ. Max. Units Qg Total Gate Charge -- 90 110 Qgs Gate-Source Charge -- 20 -- Qgd Gate-Drain(＂Miller＂) Charge -- 35 -- μA pF VDS=150V VDS=120V,TC=125℃ VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=75V,ID=34A, ns RG=6.2Ω See Fig 13 ④⑤ VDS=120V,VGS=10V, nC ID=34A See Fig 6 & Fig 12 ④ ⑤ Source-Drain Diode Ratings and Characteristics Symbol Characteristic IS Continuous Source Current Min. Typ. Max. Units -- -- 34 ISM Pulsed-Source Current ① -- -- 136 VSD Diode Forward Voltage ④ -- -- 1.5 trr Reverse Recovery Time -- 203 Qrr Reverse Recovery Charge -- 1.52 A Test Condition Integral reverse pn-diode in the MOSFET V TJ=25℃,IS=34A,VGS=0V -- ns TJ=25℃,IF=34A -- μC diF/dt=100A/μs ④ Notes ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=1.0mH, IAS=34A, VDD=50V, RG=27Ω, Starting TJ =25℃ ③ ISD≤34A, di/dt≤400A/μs, VDD≤BVDSS , Starting TJ =25℃ ④ Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2% ⑤ Essentially Independent of Operating Temperature 2 N-CHANNEL POWER MOSFET SFH154 Fig 1. Output Characteristics Fig 2. Transfer Characteristics 102 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V ID , Drain Current [A] 102 ID , Drain Current [A] Top : 101 @ Notes : 1. 250 µs Pulse Test 2. TC = 25 oC 100 -1 10 101 150 oC @ Notes : 1. VGS = 0 V 2. VDS = 40 V 3. 250 µs Pulse Test 100 25 oC - 55 oC 100 10-1 101 0 2 Fig 3. On-Resistance vs. Drain Current IDR , Reverse Drain Current [A] RDS(on) , [ Ω ] Drain-Source On-Resistance 8 10 102 VGS = 10 V 0.10 0.08 0.06 VGS = 20 V 0.04 o @ Note : TJ = 25 C 0.02 0 30 60 90 120 101 100 25 oC 10-1 0.2 150 @ Notes : 1. VGS = 0 V 2. 250 µs Pulse Test 150 oC ID , Drain Current [A] 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage 4000 15 Ciss= Cgs+ Cgd ( Cds= shorted ) Coss= Cds+ Cgd Crss= Cgd 3000 2000 @ Notes : 1. VGS = 0 V 2. f = 1 MHz C oss 1000 C rss 101 VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] C iss Capacitance [pF] 6 Fig 4. Source-Drain Diode Forward Voltage 0.12 00 10 4 VGS , Gate-Source Voltage [V] VDS , Drain-Source Voltage [V] VDS = 30 V 10 VDS = 75 V VDS = 120 V 5 @ Notes : ID = 34 A 0 0 20 40 60 80 100 QG , Total Gate Charge [nC] 3 N-CHANNEL POWER MOSFET SFH154 Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature 2.0 RDS(on) , (Normalized) Drain-Source On-Resistance BVDSS , (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 @ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -75 -50 -25 0 25 50 75 100 125 150 1.6 1.2 @ Notes : 1. Vgs = 10V 2. Id = 17A 0.8 175 -75 -50 TJ , Junction Temperature [oC] -25 0 25 50 75 100 125 150 175 TJ , Junction Temperature [oC] Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature 103 40 ID , Drain Current [A] 102 0.1 ms 1 ms 10 ms 101 DC @ Notes : 1. TC = 25 oC 100 2. TJ = 150 oC 3. Single Pulse 10-1 0 10 101 30 20 10 0 25 102 50 75 100 125 150 Tc , Case Temperature [oC] VDS , Drain-Source Voltage [V] Thermal Response Fig 11. Thermal Response θ Z JC(t) , ID , Drain Current [A] Operation in This Area is Limited by R DS(on) 100 D=0.5 0.2 @ Notes : 1. Zθ J C (t) = 0.61 o C/W Max. 2. Duty Factor, D = t1 /t2 3. TJ M -TC = PD M *Zθ J C (t) 10- 1 0.1 0.05 0.02 0.01 PDM single pulse 10- 2 t1 t2 10- 5 10- 4 10- 3 10- 2 10- 1 t 1 , Square Wave Pulse Duration 100 101 [sec] 4 N-CHANNEL POWER MOSFET SFH154 Fig 12. Gate Charge Test Circuit & Waveform * Current Regulator ” VGS Same Type as DUT 50KΩ Qg 200nF 12V 10V 300nF VDS Qgs VGS Qgd DUT 3mA R1 R2 Current Sampling (IG) Resistor Current Sampling (ID) Resistor Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vout 90% VDD Vin ( 0.5 rated VDS ) RG DUT Vin 10% 10V td(on) tr td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD LL VDS Vary tp to obtain required peak ID BVDSS IAS ID RG C DUT ID (t) VDD VDS (t) VDD 10V tp tp Time 5 N-CHANNEL POWER MOSFET SFH154 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS -- IS L Driver VGS RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by ＂RG＂ • IS controlled by Duty Factor ＂D＂ Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop 6