SBYV28-50 thru SBYV28-200 Vishay Semiconductors formerly General Semiconductor Soft Recovery Ultrafast Plastic Rectifier Reverse Voltage 50 to 200V Forward Current 3.5A DO-201AD Features • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • Ideally suited for use in very high frequency switching power supplies, inverters and as free wheeling diodes • Ultrafast recovery time for high efficiency • Glass passivated junction • High temperature soldering guaranteed: 250°C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension 1.0 (25.4) Min. 0.210 (5.3) 0.190 (4.8) Dia. 0.375 (9.5) 0.285 (7.2) Mechanical Data Case: JEDEC DO-201AD molded plastic body over passivated chip Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.045 oz., 1.2 g 1.0 (25.4) Min. 0.052 (1.32) 0.048 (1.22) Dia. Dimensions in inches and (millimeters) Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbols SBYV28-50 SBYV28-100 SBYV28-150 SBYV28-200 Units Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V Maximum RMS voltage VRMS 35 70 105 140 V Maximum DC blocking voltage VDC 50 100 150 200 V Minimum reverse breakdown voltage at 100µA V(BR) 55 110 165 220 V Maximum average forward rectified current 0.375” (9.5mm) lead lengths at TL = 85°C IF(AV) 3.5 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load at TJ = 150°C IFSM 90 A RΘJA 25 °C/W TJ, TSTG -55 to +150 °C Typical thermal resistance (1) Operating and storage temperature range Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbols SBYV28-50 SBYV28-100 SBYV28-150 SBYV28-200 Units Maximum instantaneous forward voltage at 3.5A (2) TJ=25°C TJ=150°C VF 1.1 0.89 V Maximum DC reverse current at rated DC blocking voltage TA=25°C TA=100°C IR 5.0 300 µA Maximum reverse recovery time at IF = 0.5A, IR = 1.0A, Irr = 0.25A TJ=25°C trr 20 ns CJ 20 pF Typical junction capacitance at 4.0V, 1MHz Notes: (1) Lead length = 3/8” on P.C. Board with 1.5” x 1.5” copper surface (2) Pulse test: tp = 300µs, duty cycle ≤ 2% Document Number 88737 11-Feb-02 www.vishay.com 1 SBYV28-50 thru SBYV28-200 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 2 – Maximum Non-Repetitive Peak Forward Surge Current 90 6.0 Resistive or Inductive Load 0.375" (9.5mm) Lead Length TL Lead Temperature 5.0 Peak Forward Surge Current (A) Average Forward Rectified Current (A) Fig. 1 – Forward Current Derating Curves 4.0 3.0 2.0 TA, Ambient Temperature P.C.B. Mounted 0.5 x 0.5" (12 x 12mm) Copper Pads 1.0 50 25 75 100 125 150 60 50 40 30 1 175 10 Number of Cycles at 50 HZ Fig. 3 – Typical Instantaneous Forward Characteristics Fig. 4 – Typical Reverse Leakage Characteristics 1,000 Instantaneous Reverse Leakage Current (µA) TJ = 100°C 10 TJ = 25°C Pulse Width = 300µs 1% Duty Cycle 1 0.1 0.01 0.4 100 TJ = 100°C 10 TJ = 25°C 1 0.1 0.01 0.6 0.8 1.0 1.2 1.4 0 1.8 1.6 20 Instantaneous Forward Voltage (V) 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 5 – Reverse Switching Characteristics Fig. 6 – Typical Junction Capacitance 100 60 di/dt=150A/µs IF = 4.0A VR=30V 50 di/dt=100A/µs di/dt=20A/µs 40 30 di/dt=50A/µs di/dt=100A/µs di/dt=150A/µs di/dt=50A/µs 20 di/dt=20A/µs 10 trr Qrr 0 0 25 50 75 100 125 Junction Temperature (°C) www.vishay.com 2 150 175 Junction Capacitance, pF Recovered Store Change / Reverse Recovery Time, nC/ns 100 Temperature (°C) 100 Instantaneous Forward Current (A) 70 20 0 0 10ms Single Half Sine-Wave TJ = 175°C 80 TJ = 25°C f = 1.0MHZ Vsig = 50mVp-p 10 1 0.1 1 10 100 Reverse Voltage (V) Document Number 88737 11-Feb-02