BTS730 PWM Power Unit The device allows continuous power control for lamps,LEDs or inductive loads. ! Highside switch (Bootstrap) ! Overtemperatur protection ! Short circuit / overload protection through pulse width reduction and overload shutdown ! Load dump protection ! Undervoltage and overvoltage shutdown with auto-restart and hysteresis ! Reverse battery protection 1) ! Timing frequency adjustable ! Controlled switching rise and fall times ! Maximum current internally limited ! Protection against loss of GND 2) ! Electrostatic discharge (ESD) protection ! Package: P-DSO-20-6 (SMD) Note: Switching frequency is programmed with an external capacitor Type Ordering Code Marking Package BTS730 Q67060-S7007-A2 - P-DSO-20-6 Parameter Symbol Values Unit Active overvoltage prodection V bb (AZ) >40 V Short circuit current I SC self-limited - Input current (DC) I Ct 2 mA Pin1 (C t) and pin19 (V C) I VC 2 mA Operating temperature range Tj -40...+150 °C Storage temperature range T stg -50...+150 Maximum Ratings Power dissipation 3) T a=25°C T a=85°C P tot 3 W 2 W K/W Thermal resistance chip-case 3) chip-ambient R th JC ≤35 R th JA ≤75 Electrostatic discharge capability (ESD) V ESD ≤1 kV (Human Body Model) acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993; R=1.5KΩ; C=100pF 1) 2) 3) With 150Ω resistor in signal GND connection. Potential between signal GND and load GND >0.5V Device on 50mm*50mm *1.5mm epoxy PCB FR4 with 6 cm2(one layer,70µm thick) copper area for Vbb conection, PCB is vertical without air blowing. Semiconductor Group 1 2003-Oct-01 BTS730 Block Diagram Over / Undervoltage Detection Overvoltage Prodtection Timing Pulse - width Generator Comparator Temperature Sensor (4,5,6,7) (14,15,16,17) Vbb Pump and Logic Current Limiting Voltage Regulator (18) (1) GND (20) Ct Timing Cap. 68nF (19) VREF (2) VC (8,9,10,11,12,13) (3) CB1 Bootstrap Capacitor 22nF 25k Signal GND Load GND Pin Definitions and Funktions Pin Symbol Funktions 1 Ct 2 C B1 3 C B2 4,5,6,7 V bb 14,15,16,17 8,9,10 OUT OUT C B2 Pin Configuration (top view) Timing capacitor Ct 1• 20 V REF for frequency C B1 2 19 V C Bootstrap capacitor C B2 3 18 GND V bb 4 17 V bb Supply voltage V bb 5 16 V bb (Leadframe connected) V bb 6 15 V bb Output V bb 7 14 V bb OUT 8 13 OUT 11,12,13 18 GND Ground OUT 9 12 OUT 19 VC Voltage for PWM-Control OUT 10 11 OUT 20 V REF Reference Voltage Semiconductor Group 2 2003-Oct-01 BTS730 Electrical Characteristics at T C = 25 °C, Vbb = 12 V, unless otherwise specified. CBootstrap = 22nF Parameter Symbol Values min. typ. On-state resistance R ON - - V bb 5.9 Unit max. 70 mΩ I L=3A, V bb=12V Operating voltage 1) - 3 - 16.9 2) V T C = -40 ...+150°C Nominal current, calculated value I L-ISO -A ISO-standard:Vbb-VOUT ≤0.5V, TC = 85°C Load current limit I LLim - 20 -A 3 4.2 5.4 V V bb(HI) 17 18 19 V V RMSmax 12 V bb-V OUT> 1V, TC = -40 ...+150°C Undervoltage shutdown V bb(LOW) I L = 3A, TC = -40 ...+150°C Overvoltage shutdown I L = 3A, TC = -40 ...+150°C Max.output voltage (RMS) - 14 V I L = 3A, V bb > 12 V T C = -40 ...+150°C Reference voltage V REF 2 3V I REF= 10mA, TC = -40 ...+150°C Reference current I REF - IR - VB - 150 - mA pin 18 (GND) to pin 20 (VREF) short Internal current consumption during 5 mA operation, measured in PWM gap TC = -40 ...+150°C Bootstrap voltage, pin 2 (C B1) to pin 3 (C B2) 10 - V V bb = 12 V, TC = -40 ...+150°C PWM frequency f PWM 50 D imax 95 98 D imin 3 8 - 100 Hz T c = -40 ... +150 °C, C t = 68 nF Max. pulse duty factor I L = 3A, % V C=0V , (50% V OUT) Min. pulse duty factor I L = 3A, - 14 % V C=0V , (50% V OUT) Slew rate "on" du/dt (on) 20 - 120 mV/µs du/dt (off) 20 - 120 mV/µs 150 - - 10 ... 90% I OUT Slew rate "off" 90 ... 10% I OUT Thermal overload trip temperature Tj °C 1) Note: undervoltage shutdown 2) Note: overvoltage shutdown Semiconductor Group 3 2003-Oct-01 BTS730 Circuits AnalogLogic-Input V REF (20) VC (19) GND (18) VC (19) Voltage Regulator 2µ A Triangular Waveform Pulse-widthComparator 6V max. 2mA Generator Input C t (1) V bb 6µ A Ct GND (1) (18) TimingGenerator 6V max. 2mA VoltageSensor (typ) Undervoltage Sensor Overvoltage Sensor +V bb V bb < 4.2 V +V bb Signal to the logic unit V bb > 18 V GND Signal to the logic unit GND Semiconductor Group 4 2003-Oct-01 BTS730 Application Note Dimming of dashboard lighting + Vbb 4,5,6,7 14,15,16,17 20 25 k# 19 220nF Vbb VREF BTS730 VC GND Ct 18 1 CB1 CB2 OUT 2 3 8,9,10 11,12,13 68nF 22nF Load 150# 150# Resistor for reverse battery and load dump prodection Package Outline P-DSO-20-6 Dimensions in mm Dimensions in mm Semiconductor Group 5 2003-Oct-01 BTS730 mΩ 140 Typ.on-state resistance R ON= f (T C ) Typ. Load current limit I LLim = f (T C ) A 30 120 25 100 20 80 15 60 10 40 5 20 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 T C °C V 50 75 100 125 150 T C °C Typ. undervoltage shutdown V bb(LOW) = f (T C) Typ. overvoltage shutdown V bb(HI) = f (T C ) V 6,0 20,0 5,5 19,5 5,0 19,0 4,5 18,5 4,0 18,0 3,5 17,5 3,0 17,0 -50 -25 0 25 50 75 100 125 150 T C °C -50 -25 0 25 50 75 100 125 150 T C °C Semiconductor Group 6 2003-Oct-01 BTS730 % 15 Typ. min. puls duty factor D imin = f (T C ) Typ. max. puls duty factor D imax = f (T C ) % 100 14 13 99 12 98 11 10 97 9 8 96 7 6 95 5 -50 -25 0 25 50 75 100 125 -50 150 -25 0 25 T C °C 100 75 100 125 150 125 150 T C °C Typ. PWM Frequency f PWM = f (T C ) Hz 50 Typ. max. output voltage V RMSmax = f (T C ), Vbb > 12V V 14,0 90 13,5 80 13,0 70 12,5 60 50 12,0 -50 -25 0 25 50 75 100 125 150 T C °C -50 -25 0 25 50 75 100 T C °C Semiconductor Group 7 2003-Oct-01