FDS9945 60V N-Channel PowerTrench MOSFET General Description Features • 3.5 A, 60 V. These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • Optimized for use in switching DC/DC converters with PWM controllers The MOSFET feature faster switching and lower gate charge than other MOSFET with comparable RDS(on) specifications. • Very fast switching • Low gate charge. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. DD1 DD1 D2 D RDS(ON) = 0.100Ω @ V GS = 10 V RDS(ON) = 0.200Ω @ V GS = 4.5V 5 DD2 6 4 Q1 3 7 SO-8 Pin 1 SO-8 G1 S1 G G2 S S2 S 1 S Absolute Maximum Ratings Symbol 8 2 Q2 TA=25oC unless otherwise noted Ratings Units V DSS Drain-Source Voltage Parameter 60 V V GSS Gate-Source Voltage ±20 V ID Drain Current 3.5 A – Continuous (Note 1a) – Pulsed PD 10 Power Dissipation for Single Operation TJ , TSTG (Note 1a) 2 (Note 1b) 1.6 (Note 1c) 1.0 Operating and Storage Junction Temperature Range W -55 to +175 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 (steady state), 50 (10 sec) °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 135 °C/W RθJ C Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS9945 FDS9945 13’’ 12mm 2500 units 2001 Fairchild Semiconductor Corporation FDS9945 Rev B(W) FDS9945 February 2001 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BV DSS ∆BV DSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V GS = 0 V, ID = 250 µA V DS = 48 V, V GS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward V GS = 20 V, V DS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse V GS = –20 V V DS = 0 V –100 nA 3 V On Characteristics 60 ID = 250 µA, Referenced to 25°C V 62.5 mV/°C (Note 2) V GS(th) ∆V GS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance V DS = V GS , ID = 250 µA ID = 250 µA, Referenced to 25°C ID(on) On–State Drain Current V GS = 10 V, = V DS =30 V gFS Forward Transconductance V DS = 5V, ID = 3.5 A 8.6 S V DS = 30 V, f = 1.0 MHz V GS = 0 V, 420 pF 48 pF 20 pF 1 2.5 –6 V GS = 10 V, ID = 3.5 A V GS = 4.5V, ID = 2.5 A V GS = 10 V, ID =3.5A, TJ =125°C 74 103 126 mV/°C 100 200 170 10 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) (Note 2) V DD = 30 V, V GS = 10 V, 7 14 ns 4.3 8.6 ns Turn–Off Delay Time 19 34 ns tf Turn–Off Fall Time 3 6 ns Qg Total Gate Charge 8 13 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge V DS = 30 V, V GS = 5 V ID = 1 A, RGEN = 6 Ω ID = 3.5 A, 4 nC 2.5 nC Drain–Source Diode Characteristics and Maximum Ratings IS V SD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward V GS = 0 V, IS = 2.1 A Voltage (Note 2) 0.8 2.1 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°/W when mounted on a 0.5in2 pad of 2 oz copper b) 125°/W when mounted on a 0.02 in2 pad of 2 oz copper c) 135°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS9945 Rev B(W) FDS9945 Electrical Characteristics FDS9945 Typical Characteristics 2.2 20 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS = 10V I D, DRAIN CURRENT (A) 6.0V 5.0V 15 4.5V 10 4.0V 5 2 VGS = 4.0V 1.8 1.6 4.5V 1.4 5.0V 6.0V 1.2 10V 1 0.8 0 0 1 2 3 4 0 5 3 Figure 1. On-Region Characteristics. 9 12 15 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.25 2 ID = 3.5A VGS = 10V 1.8 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 ID = 1.75A 0.2 o TA = 125 C 0.15 0.1 o TA = 25 C 0.05 150 2 4 6 8 10 o TJ , JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 10 o T A = -55 C IS , REVERSE DRAIN CURRENT (A) I D, DRAIN CURRENT (A) VGS = 0V o VD S = 5V 25 C o 8 125 C 6 4 2 1 o TA = 125 C 0.1 o 25 C 0.01 o -55 C 0.001 0.0001 0 2 2.5 3 3.5 4 4.5 VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS9945 Rev B(W) FDS9945 Typical Characteristics 600 ID = 3.5A VD S = 20V 30V CISS 40V 6 4 400 300 200 COSS 2 100 C RSS 0 0 0 4 8 12 16 0 5 Q g, GATE CHARGE (nC) 15 25 30 P(pk), PEAK TRANSIENT POWER (W) 50 100µs R DS(ON) LIMIT 1ms 10ms 1 100ms 1s VGS = 10V SINGLE PULSE o Rθ JA = 135 C/W 0.1 DC 10s o T A = 25 C 0.01 0.1 1 10 SINGLE PULSE Rθ JA = 135°C/W T A = 25°C 40 30 20 10 0 0.001 100 0.01 0.1 VDS , DRAIN-SOURCE VOLTAGE (V) 1 10 100 t1 , TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 20 Figure 8. Capacitance Characteristics. 100 10 10 VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. ID, DRAIN CURRENT (A) f = 1MHz VGS = 0 V 500 8 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 R θJA (t) = r(t) + R θJA R θJ A = 135 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 T J - T A = P * R θJ A(t) Duty Cycle, D = t1 / t 2 0.01 0.1 1 10 100 1000 t 1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS9945 Rev B(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G