N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 26 volt base station equipment. • Guaranteed Performance @ 880 MHz, 26 Volts Output Power — 85 Watts PEP Power Gain — 12 dB Efficiency — 30% Intermodulation Distortion — –28 dBc • 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 26 Vdc, 880 MHz, 85 Watts CW • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. 1.0 GHz, 85 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 465–06, STYLE 1 NI–780 MRF187 CASE 465A–06, STYLE 1 NI–780S MRF187SR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Drain–Gate Voltage (RGS = 1 MΩ) VDGR 65 Vdc VGS ±20 Vdc Drain Current — Continuous ID 15 Adc Total Device Dissipation @ TC ≥ 25°C Derate above 25°C PD 250 1.43 Watts W/°C Storage Temperature Range Tstg –65 to +200 °C Operating Junction Temperature TJ 200 °C Symbol Max Unit RθJC 0.70 °C/W Gate–Source Voltage THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 4 MOTOROLA RF DEVICE DATA Motorola, Inc. 2002 MRF187 MRF187R3 MRF187SR3 1 LAST ORDER 31JUL04 The RF MOSFET Line LAST SHIP 31JAN05 Order this document by MRF187/D SEMICONDUCTOR TECHNICAL DATA ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate–Source Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 550 mAdc) VGS(Q) 3 — 5 Vdc Drain–Source On–Voltage (VGS = 10 Vdc, ID = 3 Adc) VDS(on) — 0.40 0.55 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 5 Adc) gfs — 2 — S Input Capacitance (Includes Internal Input MOScap) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Ciss — 295 — pF Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Coss — 85 — pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Crss — 10 — pF Two–Tone Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) Gps 12 13 — dB Two–Tone Drain Efficiency (VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) ηD 30 33 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) IMD — –31 –28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) IRL 9 15 — dB Two–Tone Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA, f1 = 865.0 MHz, f2 = 865.1 MHz and f1 = 895.0 MHz, f2 = 895.1 MHz) Gps — 13 — dB Two–Tone Drain Efficiency (VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA, f1 = 865.0 MHz, f2 = 865.1 MHz and f1 = 895.0 MHz, f2 = 895.1 MHz) ηD — 33 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA, f1 = 865.0 MHz, f2 = 865.1 MHz and f1 = 895.0 MHz, f2 = 895.1 MHz) IMD — –31 — dBc Input Return Loss (VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA, f1 = 865.0 MHz, f2 = 865.1 MHz and f1 = 895.0 MHz, f2 = 895.1 MHz) IRL — 12 — dB Characteristic LIFETIME BUY ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Output Mismatch Stress (VDD = 26 Vdc, Pout = 85 W CW, IDQ = 550 mA, f = 880 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) MRF187 MRF187R3 MRF187SR3 2 Ψ No Degradation In Output Power Before and After Test MOTOROLA RF DEVICE DATA LAST ORDER 31JUL04 Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = 50 µAdc) LAST SHIP 31JAN05 OFF CHARACTERISTICS B1 – B2 C1 C2, C16 C3 C4, C13 C5, C20 C6, C15 C7 C8, C9 C10, C11 C12 C14 C17, C18, C19 Ferrite Bead, Fair Rite, 2743019447 10 µF, 50 V, Electrolytic Capacitor, ECEV1HV100R Panasonic 0.10 µF, B Case Chip Capacitors, CDR33BX104AKWS, Kemet 20000 pF, B Case Chip Capacitor, 200B203MCA50X, ATC 100 pF, B Case Chip Capacitors, 100B101JCA500X, ATC 47 pF, B Case Chip Capacitors, 100B470JCA500X, ATC 0.8 – 8.0 pF, Variable Capacitors, Johanson Gigatrim 4.7 pF, B Case Chip Capacitor, 100B4R7JCA500X, ATC 10 pF, B Case Chip Capacitors, 100B100JCA500X, ATC 16 pF, B Case Chip Capacitors, 100B160JCA500X, ATC 43 pF, B Case Chip Capacitor, 100B430JCA500X, ATC 7.5 pF, B Case Chip Capacitor, 100B7R5JCA500X, ATC 10 µF, 35 V, Electrolytic Capacitors, SMT, Kemet MOTOROLA RF DEVICE DATA LIFETIME BUY L1, L2 R1 R2 R3 Z1, Z11 Z2, Z10 Z3 Z4 Z5 Z6 Z7 Z8 5 Turns, #24 AWG, 0.059″ OD 12 Ω, 1/4 Watt Carbon 4.7 MΩ, 1/4 Watt Carbon 16 kΩ, 1/4 Watt Carbon 0.150″ x 0.220″ Microstrip 0.410″ x 0.220″ Microstrip 0.160″ x 0.630″ Microstrip 0.160″ x 0.630″ Microstrip 0.098″ x 0.630″ Microstrip 0.098″ x 0.630″ Microstrip 0.210″ x 0.220″ Microstrip 0.050″ x 0.220″ Microstrip Figure 1. MRF187 Schematic MRF187 MRF187R3 MRF187SR3 3 LAST SHIP 31JAN05 LAST ORDER 31JUL04 . . 6 * 6 7 /01 6 & " . %&% 8,- & . . #$ . . % ( *+ %,-" . . . #$ . 2 6 * 6 7 ( 6 %,. %&% 8,- & 7 7 2 2 2 2 2 2 2 2 34 &" 2 2 2 1; 9!:9 7 7 7 7 6 ( 6 %,. %&% 8,- & 7 2 Figure 4. Class AB Parameters versus Input Power %%& !'" η 2 /01 &" 1; 9!:9 . #$ !" /01 9! 9!:9 . Figure 3. Intermodulation Distortion Products versus Output Power #$ !" 6 * 6 7 ( 6 %,. %&% 8,- & . 2 /01 &" Figure 5. Power Gain versus Output Power .5 .5 .5 6 ( 6 %,. %&% 8,- & 7 7 .5 7 .5 7 7 7 7 .5 2 2 /01 &" Figure 6. Intermodulation Distortion versus Output Power MRF187 MRF187R3 MRF187SR3 4 LAST SHIP 31JAN05 . MOTOROLA RF DEVICE DATA LAST ORDER 31JUL04 . %%& !'" η && !" %%& !'" Figure 2. Class AB Broadband Circuit Performance /01 &" η + <" LIFETIME BUY η + <"#$ !" TYPICAL CHARACTERISTICS LAST SHIP 31JAN05 34 / 6 Ω %,- LIFETIME BUY ( 6 %,= %,- 6 * 6 7 /01 6 f MHz Zin ZOL* Ω 865 1.04 + j1.51 1.13 – j0.091 880 1.03 + j1.39 1.20 – j0.176 895 1.03 + j1.29 1.28 – j0.242 = Complex conjugate of source impedance. ZOL* = /1:> Zin Ω Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. = ?@$ ';/$:4 A@$:! /4 19@!:/(($ A:1?::4 B@34 /01#01 #/?:9 !9@34 :((3'3:4'C @4! 341:97/!0D@13/4 !3$1/913/42 Figure 7. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF187 MRF187R3 MRF187SR3 5 LAST ORDER 31JUL04 ( 6 %,- & , & , LIFETIME BUY Figure 8. MRF187 Populated PC Board Layout Diagram MRF187 MRF187R3 MRF187SR3 6 LAST SHIP 31JAN05 LAST ORDER 31JUL04 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS B G Q AAA 2X % % &> 2 %& & + 2%. 2 2 %&> ,2 2 2 %& , & %& 2 2" + % E +2 % B K (FLANGE) D AAA % % % M AAA N R (INSULATOR) % % % ''' % % S (LID) ''' (LID) % % % @@@ % % % (INSULATOR) % H C T A A CASE 465–06 ISSUE F NI–780 MRF187 (FLANGE) 4X U (FLANGE) 2X B K (FLANGE) D AAA % % % N (LID) ''' M R % % % ''' % % % @@@ % % S (INSULATOR) AAA % % (LID) % (INSULATOR) % H C E A F T A (FLANGE) MOTOROLA RF DEVICE DATA 2 2 2 2 2 2 2 2 2 2 2 2 2& 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 &> 2 %& & + 2%. 2 2 %&> ,2 2 2 %& , & %& 2 2" + % E +2 4X Z (LID) B 2 2 2 2 2 2 2 2 2 2 2 2 2 & 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 &+ > 2 2 2 & F E CASE 465A–06 ISSUE F NI–780S MRF187SR3 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 ... 2 ... 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 ... 2 ... 2 2 2 2 &+ > 2 2 2 & MRF187 MRF187R3 MRF187SR3 7 Motorola reserves the right to make changes without further notice to any products herein. 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All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF187 MRF187R3 MRF187SR3 8 ◊ MOTOROLA RF DEVICE DATA MRF187/D