IRF IRFZ24N

PD - 91354A
IRFZ24N
HEXFET® Power MOSFET
l
l
l
l
l
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
VDSS = 55V
RDS(on) = 0.07Ω
G
Description
ID = 17A
S
Fifth Generation HEXFET ® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Units
17
12
68
45
0.30
±20
71
10
4.5
5.0
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
Typ.
Max.
Units
––––
––––
––––
––––
0.50
––––
3.3
––––
62
°C/W
1
9/13/99
IRFZ24N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
55
–––
–––
2.0
4.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
LS
Internal Source Inductance
–––
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
V(BR)DSS
∆V(BR)DSS/∆TJ
IGSS
Typ.
–––
0.052
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.9
34
19
27
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.07
Ω
VGS = 10V, ID = 10A „
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, ID = 10A
25
VDS = 55V, VGS = 0V
µA
250
VDS = 44V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
20
ID = 10A
5.3
nC
VDS = 44V
7.6
VGS = 10V, See Fig. 6 and 13 „
–––
VDD = 28V
–––
ID = 10A
ns
–––
RG = 24Ω
–––
RD = 2.6Ω, See Fig. 10 „
Between lead,
4.5 –––
6mm (0.25in.)
nH
from package
–––
7.5 –––
and center of die contact
370 –––
VGS = 0V
140 –––
pF
VDS = 25V
65 –––
ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Q rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
17
A
–––
–––
68
–––
–––
–––
–––
56
120
1.3
83
180
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 10A, VGS = 0V „
TJ = 25°C, IF = 10A
di/dt = 100A/µs „
D
G
S
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 1.0mH
ƒ ISD ≤ 10A, di/dt ≤ 280A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 10A. (See Figure 12)
2
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IRFZ24N
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I , D rain-to-S ource C urrent (A )
D
I , D rain-to-S ource C urrent (A )
D
TOP
10
4.5V
20 µ s P U LS E W ID TH
TC = 2 5°C
1
0.1
1
10
A
10
4 .5V
2 0µ s P U L S E W ID T H
T C = 17 5°C
1
100
0.1
1
V D S , D rain-to-S ourc e V oltage (V )
Fig 2. Typical Output Characteristics,
TJ = 175oC
3.0
R D S (on) , Drain-to-S ource O n Resistance
(N orm alized)
I D , D rain-to-So urce C urren t (A )
100
TJ = 2 5 °C
T J = 1 7 5 °C
10
V DS = 2 5V
2 0µ s P U L S E W ID TH
4
5
6
7
8
9
10
V G S , G ate-to -So urce Voltag e (V)
Fig 3. Typical Transfer Characteristics
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A
100
V DS , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics,
TJ = 25oC
1
10
A
I D = 1 7A
2.5
2.0
1.5
1.0
0.5
V G S = 10 V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160 180
T J , Junction T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFZ24N
V GS
C is s
C rs s
C o ss
C , Capacitance (pF)
600
500
C iss
400
C oss
=
=
=
=
20
0V ,
f = 1M H z
C g s + C g d , Cd s S H O R T E D
C gd
C d s + C gd
V G S , G ate-to-S ource V oltage (V )
700
12
C rss
100
0
10
4
100
FO R TE S T C IR C U IT
S E E FIG U R E 1 3
0
4
8
12
16
A
20
V D S , D rain-to-S ourc e V oltage (V )
Q G , T otal G ate C harge (nC )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
O P E R A TIO N IN TH IS A R E A L IM ITE D
B Y R D S (o n)
I D , Drain C urrent (A )
I S D , Reverse D rain C urrent (A)
8
0
A
1
T J = 1 75 °C
TJ = 25 °C
10
V G S = 0V
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V S D , S ourc e-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
V D S = 44 V
V D S = 28 V
16
300
200
I D = 10 A
A
2.0
100
10µ s
10
100µ s
1m s
T C = 25 °C
T J = 17 5°C
S ing le P u lse
1
1
10m s
10
100
V D S , D rain-to-S ource V oltage (V )
Fig 8. Maximum Safe Operating Area
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A
IRFZ24N
RD
VDS
20
VGS
D.U.T.
RG
+
I D , D rain C u rren t (A m ps )
16
- VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
12
Fig 10a. Switching Time Test Circuit
8
VDS
90%
4
A
0
25
50
75
100
125
150
175
TC , C ase T em perature (°C )
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
T h erm a l R e s p o n s e (Z th JC )
10
D = 0.5 0
1
0 .2 0
0 .1 0
0.0 5
0.1
PD M
0.02
0.01
t
S IN G L E P U L S E
(T H E R M A L R E S P O N S E )
t2
N o te s :
1 . D u ty f ac to r D = t
0.01
0.00001
1
1
/t
2
2 . P e a k T J = P D M x Z th J C + T C
0.0001
0.001
0.01
A
0.1
1
t 1 , R ectang ular P ulse D uration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFZ24N
L
VDS
D.U.T.
RG
+
V
- DD
IAS
10 V
tp
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
E A S , S ingle P ulse A valanche E nergy (m J)
140
TO P
120
B O TTO M
100
80
60
40
20
0
V D D = 25 V
25
VDS
ID
4.2 A
7.2A
1 0A
50
A
75
100
125
150
175
S tarting T J , J unc tion T em perature (°C )
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
QGD
D.U.T.
+
V
- DS
VGS
VG
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
6
Fig 13b. Gate Charge Test Circuit
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IRFZ24N
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

•
•
•
•
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
D=
Period
+
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® power MOSFETs
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7
IRFZ24N
Package Outline
TO-220AB
Dimensions are shown in millimeters (inches)
2.87 (.11 3)
2.62 (.10 3)
10 .54 (.4 15)
10 .29 (.4 05)
-B -
3 .7 8 (.149 )
3 .5 4 (.139 )
4.69 ( .18 5 )
4.20 ( .16 5 )
-A -
1 .32 (.05 2)
1 .22 (.04 8)
6.47 (.25 5)
6.10 (.24 0)
4
1 5.24 (.60 0)
1 4.84 (.58 4)
1.15 (.04 5)
M IN
1
2
1 4.09 (.55 5)
1 3.47 (.53 0)
4.06 (.16 0)
3.55 (.14 0)
3X
3X
L E A D A S S IG NM E NT S
1 - GATE
2 - D R A IN
3 - S O U RC E
4 - D R A IN
3
1 .4 0 (.0 55 )
1 .1 5 (.0 45 )
0.93 (.03 7)
0.69 (.02 7)
0 .3 6 (.01 4)
3X
M
B A M
0.55 (.02 2)
0.46 (.01 8)
2 .92 (.11 5)
2 .64 (.10 4)
2.54 (.10 0)
2X
N O TE S :
1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82.
2 C O N TR O L LIN G D IM E N S IO N : IN C H
3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 -A B .
4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .
Part Marking Information
TO-220AB
E X A M P L E : TH IS IS A N IR F1 0 1 0
W IT H A S S E M B L Y
LOT C ODE 9B1M
A
IN TE R N A TIO N A L
R E C TIF IE R
LOGO
ASSEMBLY
LOT CO DE
PART NU MBER
IR F 10 1 0
9246
9B
1M
D A TE C O D E
(Y Y W W )
YY = YEAR
W W = W EEK
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http://www.irf.com/
Data and specifications subject to change without notice.
9/99
8
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