PHILIPS BFR93AT

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
BFR93AT
NPN 5 GHz wideband transistor
Product specification
Supersedes data of 1999 Nov 02
2000 Mar 09
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AT
FEATURES
DESCRIPTION
• High power gain
Silicon NPN transistor encapsulated
in a plastic SOT416 (SC-75) package.
The BFR93AT uses the same die as
the SOT23 version: BFR93A.
• Gold metallization ensures
excellent reliability
• SOT416 (SC-75) package.
3
fpage
1
PINNING
APPLICATIONS
Designed for use in RF amplifiers,
mixers and oscillators with signal
frequencies up to 1 GHz.
2
Top view
PIN
MBK090
DESCRIPTION
Marking code: R2.
1
base
2
emitter
3
collector
Fig.1 SOT416.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−
15
V
VCEO
collector-emitter voltage
open base
−
−
12
V
IC
collector current (DC)
−
−
35
mA
Ptot
total power dissipation
Ts ≤ 75 °C; note 1
−
−
150
mW
hFE
DC current gain
IC = 30 mA; VCE = 5 V
40
90
−
Cre
feedback capacitance
IC = 0; VCE = 5 V; f = 1 MHz;
Tamb = 25 °C
−
0.6
−
pF
fT
transition frequency
IC = 30 mA; VCE = 5 V; f = 500 MHz
4
5
−
GHz
GUM
maximum unilateral power gain
IC = 30 mA; VCE = 8 V; Tamb = 25 °C;
f = 1 GHz
−
13
−
dB
f = 2 GHz
−
8
−
dB
−
1.5
−
dB
−
−
150
°C
F
noise figure
Tj
junction temperature
IC = 5 mA; VCE = 8 V; f = 1 GHz;
Γs = Γopt
Note
1. Ts is the temperature at the soldering point of the collector pin.
2000 Mar 09
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITION
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
15
V
VCEO
collector-emitter voltage
open base
−
12
V
VEBO
emitter-base voltage
open collector
−
2
V
IC
DC collector current
−
35
mA
Ptot
total power dissipation
−
150
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Ts ≤ 75 °C; see Fig.2
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to soldering point
Rth j-s
MGU068
200
Ptot
(mW)
150
100
50
0
0
50
100
150
200
Ts (°C)
Fig.2 Power derating curve.
2000 Mar 09
3
VALUE
UNIT
500
K/W
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AT
CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
ICBO
collector cut-off current
IE = 0; VCB = 5 V
−
−
50
hFE
DC current gain
IC = 30 mA; VCE = 5 V
40
90
−
Cc
collector capacitance
IE = ie = 0; VCB = 5 V; f = 1 MHz
−
0.7
−
UNIT
nA
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
2.3
−
pF
Cre
feedback capacitance
IC = 0; VCE = 5 V; f = 1 MHz
−
0.6
−
pF
fT
transition frequency
IC = 30 mA; VCE = 5 V; f = 500 MHz
4
5
−
GHz
GUM
maximum unilateral power
gain
IC = 30 mA; VCE = 8 V; Tamb = 25 °C;
note 1;
f = 1 GHz
−
13
−
dB
f = 2 GHz
−
8
−
dB
f = 1 GHz
−
1.5
−
dB
f = 2 GHz
−
2.1
−
dB
F
noise figure
IC = 5 mA; VCE = 8 V; Γs = Γopt;
Note
S 21 2
1. GUM is the maximum unilateral power gain, assuming s12 is zero and G UM = 10 log ---------------------------------------------------------- dB
( 1 – S 11 2 ) ( 1 – S 22 2 )
2000 Mar 09
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AT
MCD087
120
MBG203
1
handbook, halfpage
Cre
(pF)
h FE
0.8
80
0.6
0.4
40
0.2
0
0
0
10
20
0
30
IC (mA)
4
VCE = 5 V.
IC = 0; f = 1 MHz.
Fig.3
Fig.4
DC current gain as a function of collector
current; typical values.
MBG204
6
fT
(GHz)
4
2
0
1
10
IC (mA)
10 2
VCE = 5 V; f = 500 MHz; Tamb = 25 °C.
Fig.5
Transition frequency as a function of
collector current; typical values.
2000 Mar 09
5
8
12
VCB (V)
16
Feedback capacitance as a function of
collector-base voltage; typical values.
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AT
MBG202
30
MBG201
30
gain
(dB)
gain
(dB)
MSG
20
20
GUM
MSG
10
0
GUM
10
0
10
20
IC (mA)
0
30
0
10
VCE = 8 V; f = 500 MHz.
VCE = 8 V; f = 1 GHz.
Fig.6
Fig.7
Gain as a function of collector current;
typical values.
MBG200
50
40
30
IC (mA)
30
Gain as a function of collector current;
typical values.
MBG207
50
handbook, halfpage
handbook, halfpage
gain
(dB)
20
gain
(dB)
GUM
GUM
40
30
MSG
MSG
20
20
10
10
Gmax
Gmax
0
0
10
10
2
10
3
f (MHz)
10
4
10
VCE = 8 V; IC = 10 mA.
VCE = 8 V; IC = 30 mA.
Fig.8
Fig.9
Gain as a function of frequency; typical
values.
2000 Mar 09
6
102
103
f (MHz)
104
Gain as a function of frequency; typical
values.
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AT
MGC901
6
MGC900
6
handbook, halfpage
handbook, halfpage
F
(dB)
F
(dB)
4
4
f = 2 GHz
IC = 30 mA
1 GHz
10 mA
500 MHz
2
0
1
10
0
10 2
10 2
IC (mA)
5 mA
2
10 3
f (MHz)
10 4
VCE = 8 V.
VCE = 8 V.
Fig.10 Minimum noise figure as a function of
collector current; typical values.
Fig.11 Minimum noise figure as a function of
collector current; typical values.
90 o
1.0
handbook, full pagewidth
1
135 o
45 o
2
0.5
0.8
0.6
0.2
180 o
0.2
0
0.5
1
0.2
2
5
F = 2 dB
0.2
0.4
5
F min = 1.4 dB
Γ opt
0o
0
5
F = 3 dB
F = 4 dB
0.5
135 o
2
45 o
1
MGC879
90 o
f = 500 MHz; VCE = 8 V; IC = 10 mA; Zo = 50 Ω.
Fig.12 Common emitter noise figure circles; typical values.
2000 Mar 09
7
1.0
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AT
90 o
handbook, full pagewidth
1.0
1
135 o
45 o
2
0.5
0.8
0.6
0.2
G max = 13.8 dB
Γ ms
180 o
F min = 2 dB
Γ opt
0.5
1
0.2
0
0.4
5
0.2
2
5
0o
0
G = 13 dB
F = 2.5 dB
0.2
G = 12 dB
5
F = 3 dB
G = 11 dB
F = 4 dB
0.5
2
135 o
45 o
1
MGC880
1.0
90 o
f = 1 GHz; VCE = 8 V; IC = 10 mA; Zo = 50 Ω.
Fig.13 Common emitter noise figure circles; typical values.
90 o
handbook, full pagewidth
1.0
1
135 o
45 o
2
0.5
0.8
0.6
(4)
0.2
0.4
5
0.2
(3)
180 o
(2) 0.5
0.2
0
(5)
(1) Γopt; Fmin = 3 dB.
(2) F = 3.5 dB.
(3) F = 4 dB.
(4) F = 5 dB.
(5) Γms; Gmax = 8.1 dB.
(6) G = 7 dB.
(7) G = 6 dB.
(8) G = 5 dB.
f = 2 GHz; VCE = 8 V; IC = 10 mA; Zo = 50 Ω.
1
2
5
0o
(1)
5
0.2
(6)
(7)
(8)
0.5
2
135 o
45 o
1
MGC881
90 o
Fig.14 Common emitter noise figure circles; typical values.
2000 Mar 09
0
8
1.0
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AT
90 o
handbook, full pagewidth
1.0
1
135 o
45 o
2
0.5
0.8
0.6
0.2
0.4
5
3 GHz
0.2
180 o
0.2
0
0.5
1
2
5
0o
0
40 MHz
5
0.2
0.5
2
135 o
45 o
1
MGC878
1.0
90 o
VCE = 8 V; IC = 30 mA; Zo = 50 Ω.
Fig.15 Common emitter input reflection coefficient (S11); typical values.
90 o
handbook, full pagewidth
135 o
180 o
45 o
3 GHz
40 MHz
50
40
30
20
0o
10
135 o
45 o
90 o
MGC898
VCE = 8 V; IC = 30 mA.
Fig.16 Common emitter forward transmission coefficient (S21); typical values.
2000 Mar 09
9
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AT
90 o
handbook, full pagewidth
135 o
45 o
3 GHz
180 o
40 MHz
0.5
0.4
0.3
0.2
0o
0.1
135 o
45 o
90 o
MGC899
VCE = 8 V; IC = 30 mA.
Fig.17 Common emitter reverse transmission coefficient (S12); typical values.
90 o
1.0
handbook, full pagewidth
1
135 o
45 o
2
0.5
0.8
0.6
0.2
0.4
5
0.2
180 o
0.2
0
0.5
1
2
5
0o
0
40 MHz
3 GHz
0.2
0.5
5
2
135 o
45 o
1
MGC877
1.0
90 o
VCE = 8 V; IC = 30 mA; Zo = 50 Ω.
Fig.18 Common emitter output reflection coefficient (S22); typical values.
2000 Mar 09
10
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AT
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT416
D
E
B
A
X
HE
v M A
3
Q
A
1
A1
2
e1
c
bp
w M B
Lp
e
detail X
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
0.95
0.60
0.1
0.30
0.15
0.25
0.10
1.8
1.4
0.9
0.7
1
0.5
1.75
1.45
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT416
2000 Mar 09
REFERENCES
IEC
JEDEC
EIAJ
SC-75
11
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AT
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
2000 Mar 09
12
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AT
NOTES
2000 Mar 09
13
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AT
NOTES
2000 Mar 09
14
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AT
NOTES
2000 Mar 09
15
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SCA 69
© Philips Electronics N.V. 2000
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Printed in The Netherlands
603508/02/pp16
Date of release: 2000
Mar 09
Document order number:
9397 750 06718