ROHM RB715W

RB715W
Diodes
Shottky barrier diode
RB715W
zExternal dimensions (Unit : mm)
zLead size figure (Unit : mm)
1.0
0.5 0.5
0.3±0.1
0.05
0.15±0.05
1.3
zFeatures
1) Ultra small mold type. (EMD3)
2) Low VF
3) High reliability.
0.7
1.6±0.2
0.7
0.7
(3)
(1)
(2)
0.2±0.1
-0.05
EMD3
0.6
0.6
0.55±0.1
0.5
0.5
1.0±0.1
zConstruction
Silicon epitaxial planer
0~0.1
0.1Min
0.8±0.1
1.6±0.2
zApplication
Low current rectification
0.7±0.1
zStructure
ROHM : EMD3
JEDEC : SOT-416
JEITA : SC-75A
dot (year week factory)
zTaping dimensions (Unit : mm)
φ1.55±0.1
0
2.0±0.05
0.3±0.1
φ0.5±0.1
8.0±0.2
0~0.1
1.8±0.2
1.8±0.1
5.5±0.2
3.5±0.05
1.75±0.1
4.0±0.1
0.9±0.2
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz・1cyc) (*1)
Junction temperature
Storage temperature
Limits
40
40
30
200
125
-40 to +125
Unit
V
V
mA
mA
℃
℃
Min.
-
Typ.
-
Max.
0.37
1
Unit
V
µA
-
2.0
-
pF
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
(*1)Rating of per diode
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
VF
Forward voltage
IR
Reverse current
Capacitance between terminals
Ct
Conditions
IF=1mA
VR=10V
VR=1.0V f=1.0MHz
Rev.B
1/3
RB715W
Diodes
zElectrical characteristic curves (Ta=25°C)
Ta=125℃
Ta=125℃
Ta=75℃
1
Ta=-25℃
Ta=25℃
0.1
Ta=75℃
10
1
Ta=25℃
0.1
Ta=-25℃
0.01
0.001
0.01
0
500
1000
0
1500
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
0.1
30
0
280
270
260
AVE:267.4mV
0.8
0.7
0.5
0.4
0.3
AVE:0.083nA
0.2
8.3ms
10
5
AVE:7.30A
2
AVE:2.02pF
Ct DISPERSION MAP
10
9
Ifsm
8.3ms 8.3ms
1cyc
5
0
Ifsm
8
t
7
6
5
4
3
2
0
1
IFSM DISPERSION MAP
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
1
Per diode
Rth(j-a)
Rth(j-c)
D=1/2
0.02
Sin(θ=180)
DC
0.01
0.00
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
100
Per diode
0.03
REVERSE POWER
DISSIPATION:PR (W)
time
FORWARD POWER
DISSIPATION:Pf(W)
IF=10mA
300us
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
0.003
0.04
Mounted on epoxy board
10
0.001
3
1
0
100
4
0
10
1ms
5
1
15
1000
6
0
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
1cyc
Ifsm
IM=1mA
7
0.1
20
10000
Ta=25℃
f=1MHz
VR=0V
n=10pcs
8
IR DISPERSION MAP
15
30
9
0.6
VF DIPERSION MAP
20
20
10
Ta=25℃
VR=10V
n=30pcs
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
290
10
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
1
250
PEAK SURGE
FORWARD CURRENT:IFSM(A)
20
0.9
Ta=25℃
IF=1mA
n=30pcs
REVERSE CURRENT:IR(nA)
FORWARD VOLTAGE:VF(mV)
10
1
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
300
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
f=1MHz
100
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
10
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(mA)
10
1000
100
0.002
D=1/2
DC
0.001
Sin(θ=180)
0
0.00
0.01
0.02
0.03
0.04
AVERAGE RECTIFIED
FORWARD CURRENT Io(A)
Io-Pf CHARACTERISTICS
0.05
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
Rev.B
2/3
RB715W
Diodes
0.1
0.1
0.08
t
DC
0.06
T
VR
D=t/T
VR=20V
Tj=125℃
D=1/2
0.04
0.02
Per diode
Io
0A
0V
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Per diode
0.06
DC
0.04
D=1/2
0
t
T
VR
D=t/T
VR=20V
Tj=125℃
Sin(θ=180)
0.02
Sin(θ=180)
Io
0A
0V
0.08
0
0
25
50
75
100
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve゙(Io-Ta)
125
0
25
50
75
100
125
CASE TEMPARATURE:Tc(℃)
Derating Curve゙(Io-Tc)
Rev.B
3/3