PNP Silicon Darlington Transistors SMBTA 63 SMBTA 64 High collector current ● High DC current gain ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBTA 63 SMBTA 64 s2U s2V Q68000-A2625 Q68000-A2485 B SOT-23 E C Maximum Ratings Parameter Symbol SMBTA 63 Values SMBTA 64 Unit Collector-emitter voltage VCE0 30 30 Collector-base voltage VCB0 30 30 Emitter-base voltage VEB0 10 10 Collector current IC 500 Peak collector current ICM 800 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 81 ˚C Ptot 360 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg V mA – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ≤ 280 Junction - soldering point Rth JS ≤ 210 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBTA 63 SMBTA 64 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 10 µA V(BR)CE0 30 – – Collector-base breakdown voltage IC = 10 µA V(BR)CB0 30 – – Emitter-base breakdown voltage IE = 10 µA V(BR)EB0 10 – – Collector-base cutoff current VCB = 30 V ICB0 – – 100 Emitter cutoff current VEB = 10 V IEB0 – – 100 DC current gain1) IC = 10 mA, VCE = 5 V hFE IC = 100 mA, VCE = 5 V SMBTA 63 SMBTA 64 SMBTA 63 SMBTA 64 V nA – 5000 10000 10000 20000 – – – – – – – – Collector-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA VCEsat – – 1.5 Base-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA VBEsat – – 2 fT 125 – – V AC characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz 1) Pulse test conditions: t ≤ 300 µs, D = 2 %. Semiconductor Group 2 MHz SMBTA 63 SMBTA 64 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector-base capacitance CCB0 = f (VCB0) Emitter-base capacitance CEB0 = f (VEB0) f = 1 MHz Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 5 V Semiconductor Group 3 SMBTA 63 SMBTA 64 Base-emitter saturation voltage IC = f (VBE sat), hFE = 1000 Collector-emitter saturation voltage IC = f (VCE sat), hFE = 1000 Collector cutoff current ICB0 = f (TA) VCB = VCE max DC current gain hFE = f (IC) VCE = 5 V Semiconductor Group 4